Preliminary
TSC10
High Voltage NPN Transistor
TO-92
Pin Definition:
1. Emitter
2. Collector
3. Base
PRODUCT SUMMARY
BV
CEO
BV
CBO
I
C
V
CE(SAT)
500V
980V
1.5A
0.5V @ I
C
/ I
B
= 0.5A / 0.1A
Features
●
●
High Voltage
High Speed Switching
Block Diagram
Structure
●
●
Silicon Triple Diffused Type
NPN Silicon Transistor
Ordering Information
Part No.
TSC10CT B0
TSC10CT B0G
TSC10CT A3
TSC10CT A3G
Package
TO-92
TO-92
TO-92
TO-92
Packing
1Kpcs / Bulk
1Kpcs / Bulk
2Kpcs / Ammo
2Kpcs / Ammo
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TC=25ºC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
DTOT
T
J
T
STG
Limit
980
500
10
1.5
3
1.96
+150
- 55 to +150
Unit
V
V
V
A
W
o
o
C
C
Thermal Performance
Parameter
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Symbol
RӨ
JA
RӨ
JC
Limit
215
65
Unit
o
o
C/W
C/W
1/4
Version: Preliminary
Preliminary
TSC10
High Voltage NPN Transistor
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
I
C
=1mA, I
B
=0
I
C
=10mA, I
E
=0
I
E
=1mA, I
C
=0
V
CES
=980V, I
E
=0
V
EB
9V, I
C
=0
I
C
/ I
B
= 0.5A / 0.1A
I
C
/ I
B
= 1.0A / 0.25A
I
C
/ I
B
= 1.5A / 0.5A
Base-Emitter Saturation Voltage
I
C
/ I
B
= 0.5A / 0.1A
I
C
/ I
B
= 1.0A / 0.25A
V
CE
= 10V, I
C
= 10mA
DC Current Gain
Dynamic Characteristics
Frequency
Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V
CE
= 10V, I
C
= 0.1A
V
CB
= 10V, f = 0.1MHz
V
CC
= 125V, I
C
= 1A,
I
B1
= I
B2
= 0.2A,
t
p
= 25uS
Duty Cycle
≤1%
f
T
Cob
t
d
t
r
t
STG
t
f
4
--
--
--
--
--
--
21
0.05
1.1
2
0.4
--
--
0.2
--
4
0.7
MHz
pF
uS
uS
uS
uS
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 1A
h
FE
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
V
CE(SAT)1
V
CE(SAT)2
V
CE(SAT)3
V
BE(SAT)1
V
BE(SAT)2
980
500
9
--
--
--
--
--
--
--
15
20
6
--
--
--
--
--
0.3
0.5
0.9
--
--
--
--
--
--
--
--
10
0.5
0.5
1
2
1
1.2
40
40
40
V
V
V
V
V
uA
uA
Conditions
Symbol
Min
Typ
Max
Unit
Resistive Load Switching Time (Ratings)
Note: pulse test: pulse width
≤300uS,
duty cycle
≤
2%
2/4
Version: Preliminary
Preliminary
TSC10
High Voltage NPN Transistor
TO-92 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
4.30
4.70
0.169
0.185
4.30
4.70
0.169
0.185
13.53 (typ)
0.532 (typ)
0.39
0.49
0.015
0.019
1.18
1.28
0.046
0.050
3.30
3.70
0.130
0.146
1.27
1.31
0.050
0.051
0.33
0.43
0.013
0.017
3/4
Version: Preliminary
Preliminary
TSC10
High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: Preliminary
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
