Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
参数名称 | 属性值 |
厂商名称 | Fairchild |
包装说明 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
雪崩能效等级(Eas) | 200 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 50 V |
最大漏极电流 (ID) | 48 A |
最大漏源导通电阻 | 0.025 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-263AB |
JESD-30 代码 | R-PSSO-G2 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 144 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | SINGLE |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
NDB6050S62Z | NDP6050J69Z | NDB6050L99Z | |
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描述 | Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Power Field-Effect Transistor, 48A I(D), 50V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
雪崩能效等级(Eas) | 200 mJ | 200 mJ | 200 mJ |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 50 V | 50 V | 50 V |
最大漏极电流 (ID) | 48 A | 48 A | 48 A |
最大漏源导通电阻 | 0.025 Ω | 0.025 Ω | 0.025 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-263AB | TO-220AB | TO-263AB |
JESD-30 代码 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 |
元件数量 | 1 | 1 | 1 |
端子数量 | 2 | 3 | 2 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 144 A | 144 A | 144 A |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | NO | YES |
端子形式 | GULL WING | THROUGH-HOLE | GULL WING |
端子位置 | SINGLE | SINGLE | SINGLE |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
厂商名称 | Fairchild | - | Fairchild |
外壳连接 | DRAIN | - | DRAIN |
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