Datasheet> 器件分类 > 分立半导体> 二极管> SFT16GP0G

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SFT16GP0G: 产品描述Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon; 产品类别分立半导体二极管; 文件大小422KB，共4页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/

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SFT16GP0G概述

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon

SFT16GP0G规格参数

参数名称	属性值
厂商名称	Taiwan Semiconductor
包装说明	O-PALF-W2
Reach Compliance Code	unknown
ECCN代码	EAR99
其他特性	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	O-PALF-W2
元件数量	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	1 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
最大重复峰值反向电压	400 V
最大反向恢复时间	0.035 µs
表面贴装	NO
端子形式	WIRE
端子位置	AXIAL

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CREAT BY ART

SFT11G - SFT18G

1.0AMP. Glass Passivated Super Fast Rectifiers

TS-1

Features

High efficiency, low VF

High current capability

High reliability

High surge current capability

Low power loss

For use in low voltage, high frequency inverter,

Free wheeling, and polarity protection application

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Mechanical Data

Case: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Pure tin plated, lead free, solderable

per MIL-STD-202, Method 208 guaranteed

Polarity: Color band denotes cathode

High temperature soldering guaranteed:

260℃/10 seconds

Mounting position: Any

Weight: 0.20 grams

Ordering Information (example)

Part No.

SFT11G

Package

TS-1

Packing

3K / AMMO box

INNER

TAPE

26mm

Packing code

(Green)

P0G

Maximum Ratings and Electrical Characteristics

Rating at 25

℃

ambient temperature unless otherwise specified.

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method)

Maximum Instantaneous Forward Voltage (Note 1)

@1A

Maximum DC Reverse Current at Rated @ T

=25

℃

DC Blocking Voltage

@ T

=125

℃

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance (Note 3)

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle

Symbol

RRM

RMS

F(AV)

FSM

Trr

θJA

STG

SFT

11G

SFT

12G

100

SFT

13G

150

105

150

SFT

14G

200

140

200

SFT

15G

300

210

300

SFT

16G

400

280

400

SFT

17G

500

350

500

SFT

18G

600

420

600

Units

0.95

100

1.3

1.7

C/W

- 55 to + 150

Note 2: Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Version:G13

SFT16GP0G相似产品对比

	SFT16GP0G	SFT16GP0	SFT14GP0G
描述	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon	Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon	Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon
厂商名称	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
包装说明	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99
其他特性	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS	FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS
外壳连接	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2
元件数量	1	1	1
端子数量	2	2	2
最高工作温度	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C
最大输出电流	1 A	1 A	1 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	400 V	400 V	200 V
最大反向恢复时间	0.035 µs	0.035 µs	0.035 µs
表面贴装	NO	NO	NO
端子形式	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL

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