Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Zetex Semiconductors |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 1 A |
基于收集器的最大容量 | 20 pF |
集电极-发射极最大电压 | 100 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 250 |
JESD-30 代码 | R-PDSO-G3 |
JESD-609代码 | e3 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | PNP |
功耗环境最大值 | 0.625 W |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | Matte Tin (Sn) |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 40 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 200 MHz |
VCEsat-Max | 0.33 V |
UFMMT723 | UFMMT722 | UFMMT717 | UFMMT718 | UFMMT720 | |
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描述 | Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 1.5A I(C), 70V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 2.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 1.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN | Small Signal Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 1 A | 1.5 A | 2.5 A | 1.5 A | 1.5 A |
基于收集器的最大容量 | 20 pF | 20 pF | 30 pF | 30 pF | 25 pF |
集电极-发射极最大电压 | 100 V | 70 V | 12 V | 20 V | 40 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 250 | 40 | 45 | 15 | 12 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609代码 | e3 | e3 | e3 | e3 | e3 |
湿度敏感等级 | 1 | 1 | 1 | 1 | 1 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 | NOT SPECIFIED | 260 | 260 |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP |
功耗环境最大值 | 0.625 W | 0.625 W | 0.625 W | 0.625 W | 0.625 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES |
端子面层 | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 40 | 40 | NOT SPECIFIED | 40 | 40 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 200 MHz | 200 MHz | 110 MHz | 180 MHz | 190 MHz |
VCEsat-Max | 0.33 V | 0.26 V | 0.22 V | 0.22 V | 0.33 V |
厂商名称 | Zetex Semiconductors | Zetex Semiconductors | - | Zetex Semiconductors | Zetex Semiconductors |
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