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MT46V16M8BJ-5BL:D

产品描述DDR DRAM, 16MX8, 0.7ns, CMOS, PBGA60, 16 X 9 MM, LEAD FREE, FBGA-60
产品类别存储    存储   
文件大小3MB,共93页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
标准  
下载文档 详细参数 全文预览

MT46V16M8BJ-5BL:D概述

DDR DRAM, 16MX8, 0.7ns, CMOS, PBGA60, 16 X 9 MM, LEAD FREE, FBGA-60

MT46V16M8BJ-5BL:D规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Micron Technology
零件包装代码BGA
包装说明TBGA,
针数60
Reach Compliance Codecompliant
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
最长访问时间0.7 ns
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PBGA-B60
JESD-609代码e1
长度16 mm
内存密度134217728 bit
内存集成电路类型DDR DRAM
内存宽度8
功能数量1
端口数量1
端子数量60
字数16777216 words
字数代码16000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织16MX8
封装主体材料PLASTIC/EPOXY
封装代码TBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.2 mm
自我刷新YES
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.3 V
标称供电电压 (Vsup)2.5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度9 mm

文档预览

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128Mb: x4, x8, x16 DDR SDRAM
Features
Double Data Rate (DDR) SDRAM
MT46V32M4 – 8 Meg x 4 x 4 banks
MT46V16M8 – 4 Meg x 8 x 4 banks
MT46V8M16 – 2 Meg x 16 x 4 banks
For the latest data sheet revisions, please refer to the Micron
®
Web site:
www.micron.com/ddr2
Features
• V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V
• V
DD
= +2.6V ±0.1V, V
DD
Q = +2.6V ±0.1V (DDR 400)
• Bidirectional data strobe (DQS) transmitted/
received with data, i.e., source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two
– one per byte)
• Programmable burst lengths: 2, 4, or 8
• Auto Refresh and Self Refresh Modes
• Longer lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2 compatible)
• Concurrent auto precharge option is supported
t
RAS lockout supported (
t
RAP =
t
RCD)
Options
• Configuration
32 Meg x 4 (8 Meg x 4 x 4 banks)
16 Meg x 8 (4 Meg x 8 x 4 banks)
8 Meg x 16 (2 Meg x 16 x 4 banks)
• Plastic Package – OCPL
66-pin TSOP
66-pin TSOP (lead-free)
1
• Timing – Cycle Time
5ns @ CL = 3 (DDR400)
6ns @ CL = 2.5 (DDR333)
2
7.5ns @ CL = 2 (DDR266)
7.5ns @ CL = 2 (DDR266A)
7.5ns @ CL = 2.5 (DDR266B)
• Self Refresh
Standard
Low Power Self Refresh
• Temperature Rating
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
• Revision
Marking
32M4
16M8
8M16
TG
P
-5B
-6T
-75E
-75Z
-75
None
L
None
IT
:A
Notes: 1. Contact Micron for availability of lead-free
products.
2. Not available in x16 configuration.
Table 1:
Configuration Addressing
32 Meg x 4
8 Meg x 4 x 4 banks
4K
4K (A0–A11)
4(BA0,BA1)
2K(A0–A9,A11)
16 Meg x 8
4 Meg x 8 x 4 banks
4K
4K (A0–A11)
4(BA0,BA1)
1K(A0–A9)
8 Meg x 16
2 Meg x 16 x 4 banks
4K
4K (A0–A11)
4(BA0,BA1)
512(A0–A8)
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
Table 2:
Key Timing Parameters
CL = CAS (READ) latency; minimum clock rate @ CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and CL = 3 (-5B).
Clock Rate
Access
Window
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
DQS–DQ
Skew
+0.40ns
+0.40ns
+0.45ns
+0.50ns
+0.50ns
Speed Grade
-5B
-6
6T
-75E/75Z
-75
CL = 2
133 MHz
133 MHz
133 MHz
133 MHz
100 MHz
CL = 2.5
167 MHz
167 MHz
167 MHz
133 MHz
133 MHz
CL = 3
200 MHz
N/A
N/A
N/A
N/A
Data-Out Window
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
09005aef8074a655
128MBDDRx4x8x16_1.fm - Rev. J 4/05 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

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