TSM9409
60V P-Channel MOSFET
SOP-8
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
-60
155 @ V
GS
= -10V
200 @ V
GS
= 4.5V
I
D
(A)
-3.5
-3.1
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM9409CS RLG
Package
SOP-8
Packing
2.5Kpcs / 13” Reel
P-Channel MOSFET
Note:
“G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
o
o
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Limit
-60
±20
-3.5
-30
-2.5
3.0
2.1
+150
- 55 to +150
Unit
V
V
A
A
A
W
o
o
T
A
= 25 C
T
A
= 70 C
C
C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
10 sec.
Symbol
RӨ
JC
RӨ
JA
Limit
30
50
Unit
o
o
C/W
C/W
1/6
Version: B13
TSM9409
60V P-Channel MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Conditions
V
GS
= 0V, I
D
= -250uA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= -60V, V
GS
= 0V
V
DS
=-5V, V
GS
= -10V
a
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Min
-60
-1.0
--
--
-20
--
--
--
--
Typ
--
--
--
--
--
125
153
8
-1.25
Max
--
--
±100
-1.0
--
155
200
--
-1.5
Unit
V
V
nA
µA
A
mΩ
S
V
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
b
a
V
GS
= -10V, I
D
= -3.5A
V
GS
= -4.5V, I
D
= -3.1A
V
DS
= -15V, I
D
= -3.5A
I
S
= -2.5A, V
GS
= 0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Q
g
V
DS
= -15V, I
D
= -3.5A,
V
GS
= -10V
Q
gs
Q
gd
C
iss
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
--
--
--
--
--
--
6
1.7
1.5
540
60
30
--
--
--
--
--
--
pF
nC
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= -15V, R
L
= 15Ω,
I
D
= -1A, V
GEN
= -10V,
R
G
= 6Ω
t
d(on)
t
r
t
d(off)
--
--
--
--
7
9
19
4
--
--
--
--
nS
Turn-Off Fall Time
t
f
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: B13
TSM9409
60V P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B13
TSM9409
60V P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B13
TSM9409
60V P-Channel MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/6
Version: B13
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