TSM4459
30V P-Channel MOSFET
SOP-8
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
-30
5.2 @ V
GS
= -10V
9.5 @ V
GS
= -4.5V
I
D
(A)
-17
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
DC-DC Converter
Battery Power System
Ordering Information
Part No.
Package
Packing
TSM4459CS RLG
SOP-8
2.5Kpcs / 13” Reel
Note:
“G” denote for Halogen Free Product
P-Channel MOSFET
Absolute Maximum Rating
(T
A
= 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Note a.
Symbol
V
DS
V
GS
T
A
= 25 C
T
A
= 70 C
T
A
= 25 C
T
A
= 70 C
o
o
o
o
Limit
-30
±20
-17
-13.6
-68
2.5
1.6
+150
- 55 to +150
Unit
V
V
A
A
W
o
o
I
D
I
DM
P
D
T
J
T
J
, T
STG
Operating Junction Temperature
Operating Junction and Storage Temperature Range
C
C
Thermal Performance
Parameter
Note a.
Symbol
Limit
50
Unit
o
Junction to Ambient Thermal Resistance
RӨ
JA
Notes:
2
a. The Device Surface Mounted on 1inch FR4 Board with 2oz copper.
C/W
1/4
Version: A12
TSM4459
30V P-Channel MOSFET
Electrical Specifications
(T
A
= 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= -15V, R
L
= 15Ω,
V
GEN
= -10V,
t
d(on)
t
r
t
d(off)
t
f
--
--
--
--
75.2
33.8
275
92.1
--
--
--
--
nS
a
Conditions
V
GS
= 0V, I
D
= -250uA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= -30V, V
GS
= 0V
V
GS
= -10V, I
D
= -9A
V
GS
= -4.5V, I
D
= -9A
I
S
= -18A, V
GS
= 0V
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(ON)
V
SD
Q
g
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
Min
-30
-1
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
--
--
--
4
7
0.8
78.4
25.1
38.7
2.88
6205
963
330
Max
--
-3
±100
-1.0
5.2
9.5
--
--
--
--
--
--
--
--
Unit
V
V
nA
µA
mΩ
V
V
DS
= -24V, I
D
= -17A,
V
GS
= -4.5V
f = 1.0MHz
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
nC
Ω
pF
R
G
= 4.7Ω
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤300µS,
duty cycle
≤2%
2/4
Version: A12
TSM4459
30V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A12
FPGA/CPLD
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