TSM190N08
75V N-Channel Power MOSFET
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
75
R
DS(on)
(mΩ)
4.2 @ V
GS
=10V
I
D
(A)
190
Features
●
●
●
●
Advanced Trench Technology
Low R
DS(ON)
4.2mΩ (Max.)
Low gate charge typical @ 160nC (Typ.)
Low Crss typical @ 300pF (Typ.)
Block Diagram
Ordering Information
Part No.
TSM190N08CZ C0
Package
TO-220
Packing
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
=25°
C
T
C
=70°
C
T
A
=25°
C
T
A
=70°
C
Drain Current-Pulsed Note 1
Avalanche Current, L=0.3mH
Avalanche Energy, L=0.3mH
T
C
=25°
C
T
C
=70°
C
T
A
=25°
C
T
A
=70°
C
I
DM
I
AS
, I
AR
E
AS
, E
AR
Symbol
V
DS
V
GS
Limit
75
±20
190
150
17
14
600
113
1900
250
160
2
1.3
-55 to +150
-55 to +150
Unit
V
V
Continuous Drain Current
I
D
A
A
A
mJ
Maximum Power Dissipation
P
D
W
Storage Temperature Range
Operating Junction Temperature Range
* Limited by maximum junction temperature
T
STG
T
J
°
C
°
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t
≤
10sec
Symbol
RӨ
JC
RӨ
JA
Limit
0.5
62.5
Unit
o
o
C/W
C/W
1/4
Version: A12
TSM190N08
75V N-Channel Power MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
V
GS
=0V, I
S
=90A
Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 90A, T
J
=25 C
dI/dt = 100A/us
o
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 90A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 75V, V
GS
= 0V
V
GS
= ±25V, V
DS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
75
--
2
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
3.4
3
--
--
160
35
40
8600
780
300
25
40
85
45
Max
--
4.2
4
1
±100
--
--
--
--
--
--
--
--
--
--
Unit
V
mΩ
V
uA
nA
V
DS
= 30V, I
D
= 90A,
V
GS
= 10V
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
nC
pF
V
GS
= 10V, V
DS
= 30V,
R
G
= 3.3Ω
t
r
t
d(off)
t
f
V
SD
t
fr
Q
fr
nS
-
0.8
70
115
1.3
V
nS
nC
Notes:
1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
2. Rθ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. Rθ
JC
is guaranteed by design while Rθ
CA
is determined by the user's board design. Rθ
JA
shown below for single device operation on FR-4 in still air
2/4
Version: A12
TSM190N08
75V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
3.740
3.910
0.147
0.154
2.440
2.940
0.096
0.116
-
6.350
-
0.250
0.381
1.106
0.015
0.040
2.345
2.715
0.092
0.058
4.690
5.430
0.092
0.107
12.700
14.732
0.500
0.581
14.224
16.510
0.560
0.650
3.556
4.826
0.140
0.190
0.508
1.397
0.020
0.055
27.700
29.620
1.060
1.230
2.032
2.921
0.080
0.115
0.255
0.610
0.010
0.024
5.842
6.858
0.230
0.270
3/4
Version: A12
TSM190N08
75V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A12
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