TSM100N06
60V N-Channel Power MOSFET
TO-220
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
(mΩ)
6.7 @ V
GS
=10V
I
D
(A)
100
Features
●
●
●
●
Advanced Trench Technology
Low R
DS(ON)
6.7mΩ (Max.)
Low gate charge typical @ 81nC (Typ.)
Low Crss typical @ 339pF (Typ.)
Block Diagram
Ordering Information
Part No.
TSM100N06CZ C0
Package
TO-220
Packing
50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
C
T
C
=25°
Continuous Drain Current
T
C
=70°
C
T
A
=25°
C
T
A
=70°
C
Drain Current-Pulsed Note 1
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
C
T
C
=25°
Maximum Power Dissipation
T
C
=70°
C
T
A
=25°
C
T
A
=70°
C
Storage Temperature Range
Operating Junction Temperature Range
* Limited by maximum junction temperature
T
STG
T
J
P
D
I
DM
I
AS
E
AS
, E
AR
I
D
Symbol
V
DS
V
GS
Limit
60
±20
100
80
14
11
400
71
400
167
107
2
1.3
-55 to +150
-55 to +150
(3)
Unit
V
V
A
A
A
mJ
W
°
C
°
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Notes: Surface mounted on FR4 board t
≤
10sec
Symbol
RӨ
JC
RӨ
JA
Limit
0.8
62.5
Unit
o
o
C/W
C/W
1/6
Version: A12
TSM100N06
60V N-Channel Power MOSFET
Electrical Specifications
(Ta = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
V
GS
=0V, I
S
=20A
Voltage
Reverse Recovery Time
I
S
= 30A, T
J
=25 C
o
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 10V, I
D
= 30A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 48V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
60
--
2
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
5.7
3
--
--
81
23
24
4382
668
339
25
19
85
43
Max
--
6.7
4
1
±100
--
--
--
--
--
--
--
--
--
--
Unit
V
mΩ
V
uA
nA
V
DS
= 30V, I
D
= 30A,
V
GS
= 10V
V
DS
= 30V, V
GS
= 0V,
f = 1.0MHz
nC
pF
V
GS
= 10V, V
DS
= 30V,
R
G
= 3.3Ω
t
r
t
d(off)
t
f
V
SD
t
fr
nS
-
0.8
36
1.3
V
nS
dI/dt = 100A/us
Reverse Recovery Charge
Q
fr
53
nC
Notes:
1. Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2%.
2. Rθ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. Rθ
JC
is guaranteed by design while Rθ
CA
is determined by the user's board design. Rθ
JA
shown below for single device operation on FR-4 in still air
3. Calculated continuous current based on maximum allowable junction temperature, Package limitation current is
75A
2/6
Version: A12
TSM100N06
60V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Gate Threshold Voltage
Gate Source On Resistance
Drain-Source On Resistance
Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
3/6
Version: A12
TSM100N06
60V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Power Derating
Drain Current vs. Junction Temperature
Safe Operation Area
Transient Thermal Impedance
Capacitance
Gate Charge
4/6
Version: A12
TSM100N06
60V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
10.000
10.500
0.394
0.413
3.740
3.910
0.147
0.154
2.440
2.940
0.096
0.116
-
6.350
-
0.250
0.381
1.106
0.015
0.040
2.345
2.715
0.092
0.058
4.690
5.430
0.092
0.107
12.700
14.732
0.500
0.581
14.224
16.510
0.560
0.650
3.556
4.826
0.140
0.190
0.508
1.397
0.020
0.055
27.700
29.620
1.060
1.230
2.032
2.921
0.080
0.115
0.255
0.610
0.010
0.024
5.842
6.858
0.230
0.270
5/6
Version: A12
嵌入式系统
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