KM416C4004C, KM416C4104C
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family.
All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family
is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.
FEATURES
• Part Identification
- KM416C4004C(5.0V, 8K Ref.)
- KM416C4104C(5.0V, 4K Ref.)
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
Unit : mW
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply
•
Active Power Dissipation
Speed
-5
-6
8K
495
440
4K
660
605
•
Refresh Cycles
Part
NO.
KM416C4004C*
KM416C4104C
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
RAS
UCAS
LCAS
W
Control
Clocks
VBB Generator
Vcc
Vss
Lower
Data in
Buffer
Sense Amps & I/O
Lower
Data out
Buffer
Upper
Data in
Buffer
Upper
Data out
Buffer
FUNCTIONAL BLOCK DIAGRAM
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
•
Performance Range
Speed
-5
-6
Refresh Timer
Refresh Control
Refresh Counter
Row Decoder
DQ0
to
DQ7
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
A0~A12
(A0~A11)*1
A0~A8
(A0~A9)*1
Row Address Buffer
Col. Address Buffer
Memory Array
4,194,304 x 16
Cells
OE
Column Decoder
DQ8
to
DQ15
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
KM416C4004C, KM416C4104C
CMOS DRAM
PIN CONFIGURATION
(Top Views)
• KM416C40(1)04CS
V
CC
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
N.C
V
CC
W
RAS
N.C
N.C
N.C
N.C
A0
A1
A2
A3
A4
A5
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
V
SS
DQ15
DQ14
DQ13
DQ12
V
SS
DQ11
DQ10
DQ9
DQ8
N.C
V
SS
LCAS
UCAS
OE
N.C
N.C
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
(400mil TSOP(II))
*(N.C) : N.C for 4K Refresh Product
Pin Name
A0 - A12
A0 - A11
DQ0 - 15
V
SS
RAS
UCAS
LCAS
W
OE
V
CC
N.C
Pin function
Address Inputs(8K Product)
Address Inputs(4K Product)
Data In/Out
Ground
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
Data Output Enable
Power(+5.0V)
No Connection
KM416C4004C, KM416C4104C
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN,
V
OUT
V
CC
Tstg
P
D
I
OS
Address
Rating
-1.0 to +7.0
-1.0 to +7.0
-55 to +150
1
50
CMOS DRAM
Units
V
V
°C
W
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.6
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1.0
*1
0.7
Units
V
V
V
V
*1 : V
CC
+2.0V at pulse width≤20ns which is measured at V
CC
*2 : -2.0 at pulse width≤20ns which is measured at V
SS
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Input Leakage Current (Any input 0≤V
IN
≤V
CC
+0.5V,
all other pins not under test=0 Volt)
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-5mA)
Output Low Voltage Level(I
OL
=4.2mA)
Symbol
I
I(L)
I
O(L)
V
OH
V
OL
Min
-5
-5
2.4
-
Max
5
5
-
0.4
Units
uA
uA
V
V
KM416C4004C, KM416C4104C
DC AND OPERATING CHARACTERISTICS
(Continued)
Max
Symbol
Power
Speed
KM416C4004C
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
Don′t care
Normal
Don′t care
Don′t care
Normal
Don′t care
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
90
80
2
90
80
100
90
1
120
110
KM416C4104C
120
110
2
120
110
110
100
1
120
110
CMOS DRAM
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC1
* : Operating Current (RAS and UCAS, LCAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=UCAS=LCAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (UCAS=LCAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, UCAS or LCAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=UCAS=LCAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and UCAS or LCAS cycling @
t
RC
=min)
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time
t
HPC
.
KM416C4004C, KM416C4104C
CAPACITANCE
(T
A
=25°C, V
CC
=5.0V, f=1MHz)
Parameter
Input capacitance [A0 ~ A12]
Input capacitance [RAS, UCAS, LCAS, W, OE]
Output capacitance [DQ0 - DQ15]
Symbol
C
IN1
C
IN2
C
DQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS
(0°C≤T
A
≤70°C,
See note 1,2)
Test condition : V
CC
=5.0V±10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
OE to output in Low-Z
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Symbol
Min
-5
Max
Min
104
138
50
13
25
3
3
3
1
30
50
13
38
8
20
15
5
0
10
0
8
25
0
0
0
10
10
13
8
0
10K
37
25
10K
50
13
3
3
3
1
40
60
15
45
10
20
15
5
0
10
0
10
30
0
0
0
10
10
15
10
0
10K
45
30
10K
50
13
60
15
30
-6
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
16
9,19
8
8
13
13
4
10
3,4,10
3,4,5
3,10
3
6,21
3
2
Units
Note
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
CEZ
t
OLZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
84
116
stm32/stm8
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