电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

KSA1015D74Z

产品描述Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
产品类别分立半导体    晶体管   
文件大小39KB,共4页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 全文预览

KSA1015D74Z概述

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSA1015D74Z规格参数

参数名称属性值
厂商名称Fairchild
包装说明CYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)0.15 A
集电极-发射极最大电压50 V
配置SINGLE
最小直流电流增益 (hFE)25
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型PNP
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置BOTTOM
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)80 MHz

文档预览

下载PDF文档
KSA1015
KSA1015
LOW FREQUENCY AMPLIFIER
• Collector-Base Voltage : V
CBO
= -50V
• Complement to KSC1815
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
ST9
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-50
-50
-5
-150
-50
400
125
-65 ~ 150
Units
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -50V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -6V, I
C
= -2mA
V
CE
= -6V, I
C
= -150mA
I
C
= -100mA, I
B
= -10mA
I
C
= -100mA, I
B
= -10mA
V
CE
= -10V, I
C
=-1mA
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -6V, I
C
= -0.1mA
f=100Hz, R
G
=10kΩ
80
4
0.5
7
6
70
25
-0.1
Min.
-50
-50
-5
-0.1
-0.1
400
-0.3
-1.1
V
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
µA
µA
h
FE1
Classification
Classification
h
FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2000 Fairchild Semiconductor International
Rev. A, February 2000

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1894  339  834  1380  1625  4  50  56  37  34 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved