PRELIMINARY DATA SHEET
GaAs INTEGRATED CIRCUIT
µ
PG175TA
L-Band PA DRIVER AMPLIFIER
DESCRIPTION
µ
PG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC
(Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the
high gain and low distortion.
FEATURES
• Low Operation Voltage: V
DD1
= V
DD2
= 3.0 V
• f
RF
: 925 to 960 MHz@ P
out
= +9 dBm
• Low distortion: P
adj1
= –60 dBc typ. @ V
DD
= 3.0 V, P
out
= +9 dBm, V
AGC
= 2.5 V
External input and output matching
• Low operation Current: I
DD
= 20 mA typ. @ V
DD
= 3.0 V, P
out
= +9 dBm, V
AGC
= 2.5 V
External input and output matching
• Variable gain control function:
∆G
= 35 dB typ. @ V
AGC
= 0.5 to 2.5 V
• 6 pin mini-mold package
APPLICATION
• Digital Cellular: PDC800M, etc.
ORDERING INFORMATION (PLAN)
PART NUMBER
PACKAGE
6 pin Mini-mold
PACKING FORM
Carrier tape width is 8 mm, Quantity is 3 kpcs per reel.
µ
PG175TA-E3
Remark
For sample order, please contact your local NEC sales office. (Part number for sample order:
µ
PG175TA)
Caution The IC must be handled with care to prevent static discharge because its circuit composed of
GaAs HJ-FET.
The information in this document is subject to change without notice.
Document No. P13470EJ1V0DS00 (1st edition)
Date Published May 1998 N CP(K)
Printed in Japan
©
1998
µ
PG175TA
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
PARAMETERS
Supply Voltage
AGC Control Voltage
Input Power
Total Power Dissipation
Operating Temperature
Storage Temperature
SYMBOL
V
DD1
, V
DD2
V
AGC
P
in
P
tot
T
A
T
stg
RATINGS
6.0
6.0
–8
200
Note
–30 to +90
–35 to +150
UNIT
V
V
dBm
mW
°C
°C
Note
Mounted on a 50
×
50
×
1.6 mm double copper clad epoxy glass PWB, T
A
= +85°C
PIN CONNECTION AND INTERNAL BLOCK DIAGRAM
PIN NO.
1
2
3
CONNECTION
V
DD1
GND
V
DD2
& OUT
PIN NO.
4
5
6
CONNECTION
V
AGC
GND
IN
Top View
Bottom View
Top View
2
1
G1E
3
4
5
6
4
5
6
3
2
1
3
2
1
4
5
6
RECOMMENDED OPERATING CONDITIONS (T
A
= 25°C)
PARAMETERS
Supply Voltage
AGC Control Voltage
Input Power
SYMBOL
V
DD1
, V
DD2
V
AGC
P
in
MIN.
+2.7
0.5
–21
TYP.
+3.0
MAX.
+3.3
2.5
–17
UNIT
V
V
dBm
2
Preliminary Data Sheet
µ
PG175TA
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= 25°C, V
DD1
= V
DD2
= +3.0 V,
π
/4DQPSK modulated signal input,
External input and output matching)
PARAMETERS
Operating Frequency
Total Current
AGC Control Current
Power Gain
Variable Gain Range
Adjacent Channel Power
Leakage 1
Adjacent Channel Power
Leakage 2
Input Return Loss
Output Return Loss
SYMBOL
f
I
DD
I
AGC
G
p
∆G
P
adj1
P
in
= –21 dBm, V
AGC
= 2.5 V
V
AGC
= 0.5 to 2.5 V
P
in
= –21 dBm, V
AGC
= 2.5 V
P
in
= –21 dBm, V
AGC
= 0.5 to 2.5 V
P
out
= +9 dBm, V
AGC
= 2.5 V
∆f
=
±50
kHz, 21 kHz Band Width
P
out
= +9 dBm, V
AGC
= 2.5 V
∆f
=
±100
kHz, 21 kHz Band Width
External matching
External matching
27
30
TEST CONDITIONS
MIN.
925
20
200
30
35
–60
–55
TYP.
MAX.
960
30
500
UNIT
MHz
mA
µ
A
dB
dB
dBc
P
adj2
–70
–65
dBc
RL
in
RL
out
10
10
dB
dB
Preliminary Data Sheet
3
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