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MT16VDDF6464HG-26AXX: 产品描述DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200; 产品类别存储存储; 文件大小548KB，共30页; 制造商Micron Technology; 官网地址http://www.mdtic.com.tw/

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MT16VDDF6464HG-26AXX概述

DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200

MT16VDDF6464HG-26AXX规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	Micron Technology
零件包装代码	SODIMM
包装说明	DIMM,
针数	200
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	DUAL BANK PAGE BURST
最长访问时间	0.75 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N200
内存密度	4294967296 bit
内存集成电路类型	DDR DRAM MODULE
内存宽度	64
功能数量	1
端口数量	1
端子数量	200
字数	67108864 words
字数代码	64000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	64MX64
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	235
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	2.7 V
最小供电电压 (Vsup)	2.3 V
标称供电电压 (Vsup)	2.5 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	DUAL
处于峰值回流温度下的最长时间	30

MT16VDDF6464HG-26AXX相似产品对比

	MT16VDDF6464HG-26AXX	MT16VDDF12864HG-26AXX	MT16VDDF12864HY-26AXX	MT16VDDF12864HY-262XX	MT16VDDF12864HG-262XX	MT16VDDF6464HY-265A1	MT16VDDF6464HG-265A1	MT16VDDF6464HY-262XX	MT16VDDF6464HG-262XX	MT16VDDF6464HY-26AXX
描述	DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 128MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200	DDR DRAM Module, 64MX64, 0.75ns, CMOS, MO-224, SODIMM-200
是否Rohs认证	不符合	不符合	符合	符合	不符合	符合	不符合	符合	不符合	符合
厂商名称	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
零件包装代码	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM	SODIMM
包装说明	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,
针数	200	200	200	200	200	200	200	200	200	200
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	unknown	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
最长访问时间	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns	0.75 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200
内存密度	4294967296 bit	8589934592 bit	8589934592 bit	8589934592 bit	8589934592 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit	4294967296 bit
内存集成电路类型	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
内存宽度	64	64	64	64	64	64	64	64	64	64
功能数量	1	1	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1	1	1
端子数量	200	200	200	200	200	200	200	200	200	200
字数	67108864 words	134217728 words	134217728 words	134217728 words	134217728 words	67108864 words	67108864 words	67108864 words	67108864 words	67108864 words
字数代码	64000000	128000000	128000000	128000000	128000000	64000000	64000000	64000000	64000000	64000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	64MX64	128MX64	128MX64	128MX64	128MX64	64MX64	64MX64	64MX64	64MX64	64MX64
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	235	235	260	260	235	260	NOT SPECIFIED	260	235	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	30	30	30	30	30	30	NOT SPECIFIED	30	30	30
是否无铅	含铅	含铅	不含铅	不含铅	含铅	不含铅	-	不含铅	含铅	不含铅
JESD-609代码	-	-	e4	e4	e0	e4	e0	e4	-	e4
端子面层	-	-	Gold (Au)	Gold (Au)	Tin/Lead (Sn/Pb)	Gold (Au)	Tin/Lead (Sn/Pb)	Gold (Au)	-	Gold (Au)

MT16VDDF6464HG-26AXX

MT16VDDF6464HG-26AXX概述

MT16VDDF6464HG-26AXX规格参数

MT16VDDF6464HG-26AXX相似产品对比

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