logic-level converters, as current ”sink” or ”source”
drivers or as multiplexer (1 to 6).
4049UB
and
4050B
are prefered replacements for
4009UB
and
4010B,
respectively, in buffer applica-
tions.
EY
(Plastic Package)
F
(Ceramic Package)
DESCRIPTION
The
HCC4009UB/4010B
(extended temperature
range) and the
HCF4009UB/4010B
(intermediate
temperature range) are monolithic integrated cir-
cuits available in 16-lead dual in line plastic or ce-
ramic packages and plastic micropackage.
The
HCC/HCF4009UB/4010B
are inverting and
PIN CONNECTIONS
4009UB
4010B
M1
(Micro Package)
C1
(Chip Carrier)
ORDER CODES :
HCCXXXXBF
HCFXXXXBM1
HCFXXXXBEY
HCFXXXXBC1
September 1988
1/13
HCC/HCF4009UB HCC/ HCF4010B
SCHEMATIC DIAGRAM: COS/MOS TO DTL OR TTL CONVERTER
(1 of 6 identical units)
4009UB
4010B
Connect V
CC
to DTL or TTL supply and V
DD
to COS/MOS supply
ABSOLUTE MAXIMUM RATING
Symbol
V
DD
*
V
i
I
I
P
tot
Parameter
Supply Voltage:
HCC
Types
HCF
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for Top = Full Package Temperature Range
Operating Temperature:
HCC
Types
HCF
Types
Storage Temperature
Value
-0.5 to +20
-0.5 to +18
-0.5 to V
DD
+ 0.5
±
10
200
100
-55 to +125
-40 to +85
-65 to +150
Unit
V
V
V
mA
mW
mW
o
o
T
op
T
stg
C
C
o
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress ratingonly and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage:
HCC
Types
HCF
Types
Input Voltage
Operating Temperature:
HCC
Types
HCF
Types
Value
3 to 18
3 to 15
0 to V
DD
-55 to +125
-40 to +85
Unit
V
V
V
o
o
C
C
2/13
HCC/HCF4009UB HCC/HCF4010B
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Symbol
I
L
Parameter
Quiescent
Current
Test Conditios
V
I
V
O
|I
O
| V
DD
(V)
(V)
(µA) (V)
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
5
10
15
5
10
15
5
10
15
18
Any Input
T
LOW
*
Min. Max.
1
2
4
20
4
8
16
4.95
9.95
14.95
0.05
0.05
0.05
4
8
12.5
3.5
7
11
1
2
2.5
1.5
3
4
-1
-0.25
-0.55
-1.65
-0.9
-0.23
-0.5
-1.6
3.75
10
30
3.6
0.96
40
±0.1
Value
25
o
C
Min. Typ. Max.
0.02
1
0.02
2
0.02
4
0.04
20
0.02
4
0.02
8
0.02
16
4.95
9.95
14.95
0.05
0.05
0.05
4
8
12.5
3.5
7
11
1
2
2.5
1.5
3
4
-0.8 -1.6
-0.2 -0.4
-0.45 -0.9
-1.5
-3
-0.8 -1.6
-0.2 -0.4
-0.45 -0.9
-1.5
-3
3
4
8
10
24
36
3
4
8
10
24
36
±10
-5
15
5
±0.1
22.6
7.5
T
HIGH
*
Min. Max.
30
60
120
600
30
60
120
4.95
9.95
14.95
0.05
0.05
0.05
4
8
12.5
3.5
7
11
1
2
2.5
1.5
3
4
-0.58
-0.15
-0.33
-1.1
-0.65
-0.18
-0.38
-1.25
2.1
5.6
16
2.4
6.4
1.9
±1
Unit
V
OH
V
OL
V
IH
0/5
0/10
0/15
0/20
0/5
HCF
Types 0/10
0/15
Output High
0/5
Voltage
0/10
0/15
Output Low
5/0
Voltage
10/0
15/0
Input High
Voltage (4009UB)
HCC
Types
Input High
Voltage (4010B)
Input Low
Voltage (4009UB)
Input Low
Voltage (4010B)
Output
Drive
Current
0/5
0/5
0/10
0/15
0/5
0/5
0/10
0/15
0/5
0/10
0/15
0/5
0/10
0/15
µA
V
V
V
IH
V
IL
V
IL
I
OH
HCC
Types
HCF
Types
I
OL
Output
Sink
Current
HCC
Types
HCF
Types
0.5
1
1.5
4.5
9
13.5
4.5
9
13.5
0.5
1
1.5
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
V
V
V
V
mA
mA
I
IH
, I
IL
C
I
o
Input Leakage
0/18
Current
Input
4009UB
Capacitance 4010B
o
µA
pF
* T
LOW
= -55 C for
HCC
device: -40 C for
HCF
device.
* T
HIGH
= +125
o
C for
HCC
device: +85
o
C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is: 1V min. with V
DD
= 5 V, 2 V min. with V
DD
= 10 V, 2.5 V min. with V
DD
= 15 V
3/13
HCC/HCF4009UB HCC/ HCF4010B
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25
o
C, C
L
= 50 pF, R
L
= 200 KΩ,
o
typical temperature coefficent for all V
DD
values is 03 %/ C, all input rise and fall times= 20 ns)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
