Bulletin PD -2.382 rev. D 12/00
HFA06TB120
HEXFRED
TM
Ultrafast, Soft Recovery Diode
Features
•
•
•
•
•
Ultrafast Recovery
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Specified at Operating Conditions
BASE
CATHODE
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F(AV)
= 6.0A
Q
rr
(typ.)= 116nC
4
2
I
RRM
(typ.) = 4.4A
3
ANODE
2
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
1
CATHODE
t
rr
(typ.) = 26ns
di
(rec)M
/dt (typ.)* = 100A/µs
Description
International Rectifier's HFA06TB120 is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
6 amps continuous current, the HFA06TB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I
RRM
)
and does not exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing, component
count and heatsink sizes. The HEXFRED HFA06TB120 is ideally suited for applications
in power supplies and power conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high efficiency is needed.
TO-220AC
Absolute Maximum Ratings
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
8.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
*
125°C
1
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
Cathode Anode Breakdown
Voltage
V
FM
Max. Forward Voltage
–––
–––
–––
I
RM
Max. Reverse Leakage Current
–––
–––
C
T
L
S
Junction Capacitance
Series Inductance
–––
–––
2.7
3.5
2.4
3.0
3.9
2.8
µA
pF
nH
V
I
F
= 6.0A
I
F
= 12A
I
F
= 6.0A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= 0.8 x V
R
Rated
D
R
V
R
= 200V
Rated
Min. Typ. Max. Units
1200 ––– –––
V
Test Conditions
I
R
= 100µA
0.26 5.0
110 500
9.0
8.0
14
–––
Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1
di
(rec)M
/dt2
Peak Rate of Recovery
Current During t
b
Reverse Recovery Charge
Peak Recovery Current
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
53
87
4.4
5.0
116
233
180
100
–––
80
130
8.0
9.0
320
585
–––
–––
A/µs
nC
A
ns
Test Conditions
I
F
= 1.0A, di
f
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
di
f
/dt = 200A/µs
V
R
= 200V
I
F
= 6.0A
Thermal - Mechanical Characteristics
Parameter
T
lead
!
R
thJC
R
thJA
"
R
thCS
$
Wt
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Weight
Min.
––––
––––
––––
––––
––––
––––
Mounting Torque
6.0
5.0
!
0.063 in. from Case (1.6mm) for 10 sec
"#Typical
Socket Mount
$
Mounting Surface, Flat, Smooth and Greased
Typ.
––––
––––
––––
0.5
2.0
0.07
––––
––––
Max.
300
2.0
80
––––
––––
––––
12
10
Units
°C
K/W
g
(oz)
Kg-cm
lbf•in
2
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
100
1000
TJ = 150˚C
100
Reverse Current - I
R
(µA)
125˚C
100˚C
10
1
25˚C
10
Instantaneous Forward Current - I
F
(A)
0.1
0.01
0
200 400 600 800 1000 1200 1400
Reverse Voltage - V
R
(V)
100
1
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
Junction Capacitance - C
T
(pF)
T = 25˚C
J
10
0.1
0
2
4
Forward Voltage Drop - V
FM
(V)
6
1
1
10
100
1000
10000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
t1
t2
0.1
Notes:
1. Duty factor D = 1 / t
t 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
3
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
110
100
90
80
trr - ( nC )
I
F
= 6 A
I
F
= 4 A
25
20
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
I
F
= 6 A
I
F
= 4 A
15
Irr - ( A)
70
60
50
40
30
20
100
di
f
/dt - (A/µs )
Fig. 5 - Typical Reverse Recovery
Vs. di
f
/dt
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
10
5
1000
0
100
di
f
/dt - (A/µs )
1000
Fig. 6 - Typical Recovery Current
Vs. di
f
/dt
1000
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
10000
800
I
F
= 6 A
I
F
= 4 A
Qrr - ( nC )
600
400
di
(REC)
M/dt - (A/µs )
1000
I
F
= 6 A
I
F
= 4 A
100
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
200
0
100
di
f
/dt - (A/µs )
1000
10
100
di
f
/dt - (A/µs )
1000
Fig. 8 - Typical Stored Charge vs. di
f
/dt
Fig. 7 - Typical di
(REC)
M/dt vs. di
f
/dt
4
HFA06TB120
Bulletin PD-2.382 rev. D 12/00
REVERSE RECOVERY CIRCUIT
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
2
Q
rr
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
di
f
/dt
1. di
f
/dt - Rate of change of
current
through zero
crossing
2. I
RRM
- Peak reverse
recovery current
4. Q
rr
- Area under curve
defined by t
rr
and I
RRM
t
rr
X I
RRM
3. trr - Reverse recovery
Q
rr
=
time measured
from zero
2
crossing point of negative
going I
F
to point where a line 5. di
(rec)M
/dt - Peak rate of
passing through 0.75 I
RRM
change of current during t
b
and 0.50 I
RRM
portion of t
rr
extrapolated to zero current
Fig. 10 - Reverse Recovery Waveform and Definitions
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
