SMK830P
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BV
DSS
=500V(Min.)
Low C
rss
: C
rss
=33pF(Typ.)
Low gate charge : Qg=16nC(Typ.)
Low R
DS(on)
: R
DS(on)
=1.5Ω(Max.)
G
Package Code
TO-220AB
G
DS
TO-220AB
PIN Connection
D
Ordering Information
Type No.
SMK830P
Marking
SMK830
S
Marking Diagram
Column 1 : Manufacturer
AUK
GYMDD
SMK830
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory Management Code
-. YMDD : Date Code (Year, Month, Date)
Column 3 : Device Code
Absolute maximum ratings
(
T
C
=25C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Symbol
V
DSS
V
GSS
I
D
T
C
=25C
T
C
=100C
I
DM
P
D
②
②
①
①
Rating
500
30
4.5
2.9
18
70
4.5
250
4.5
5.0
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
C
Drain current (Pulsed)
Power dissipation
*
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max.
1.78
62.5
Unit
C/W
KSD-T0P025-002
1
SMK830P
Electrical Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250uA, V
GS
=0V
I
D
=250uA, V
DS
=V
GS
V
DS
=500V, V
GS
=0V
V
DS
=0V, V
GS
=30V
V
GS
=10V, I
D
=2.25A
V
DS
=10V, I
D
=2.25A
V
GS
=0V, V
DS
=25V
f=1 MHz
Min. Typ. Max.
500
2.0
-
-
-
-
-
-
-
-
-
-
-
-
1.2
5.2
745
82
33
12
46
50
48
16
5.5
4.0
-
4.0
1
100
1.5
-
930
102
42
-
-
-
-
20
-
-
Unit
V
V
uA
nA
S
pF
V
DD
=250V, I
D
=4.5A
R
G
=25Ω
③④
-
-
-
-
-
③④
-
ns
V
DS
=400V, V
GS
=10V
I
D
=4.5A
nC
Source-Drain Diode Ratings and Characteristics
(T
C
=25C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=4.5A
I
S
=4.5A, V
GS
=0V
dI
F
/dt=100A/us
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
-
263
1.9
4.5
18
1.4
-
-
A
V
ns
uC
Note ;
①
Repetitive rating : Pulse width limited by maximum junction temperature
②
L=22.2mH, I
AS
=4.5A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25C
③
Pulse Test : Pulse width≤300us, Duty cycle≤2%
④
Essentially independent of operating temperature
KSD-T0P025-002
2
SMK830P
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
Fig. 2 I
D
- V
GS
1
Fig. 3 R
DS(on)
- I
D
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
`
Fig. 6 V
GS
- Q
G
℃
KSD-T0P025-002
3
SMK830P
Fig. 7 V
(BR)DSS
- T
J
Fig. 8 R
DS(on)
- T
J
㎂
C
C
Fig. 9 I
D
- T
C
Fig. 10 Safe Operating Area
*
KSD-T0P025-002
4
Fig. 11 Gate Charge Test Circuit & Waveform
SMK830P
Fig. 12 Switching Time Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T0P025-002
5
PCB设计
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