SMK1360CI
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
•
•
•
High Voltage : BV
DSS
=600V(Min.)
Low C
rss
: C
rss
=14.6pF(Typ.)
Low gate charge : Qg=41nC(Typ.)
Low R
DS(on)
: R
DS(on)
=0.65Ω(Max.)
G
Package Code
TO-3P
G DS
TO-3P
PIN Connection
D
Ordering Information
Type No.
SMK1360CI
Marking
SMK1360
S
Marking Diagram
Column 1 : Manufacturer
AUK
GYMDD
SMK1360
Column 2 : Production Information
e.g.) GYMDD
-. G : Factory management code
-. YMDD : Date Code (year, month, date)
Column 3 : Device Code
Absolute maximum ratings
(
T
C
=25°C unless otherwise noted)
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
*
Symbol
V
DSS
V
GSS
I
D
(Tc=25℃)
(Tc=100℃)
I
DM
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
600
±30
13
8.2
52
200
13
544
13
11.6
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-A)
Typ.
-
-
Max.
0.625
40
Unit
°C/W
KSD-T0V001-001
1
SMK1360CI
Electrical Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250μA, V
GS
=0
I
D
=250μA, V
DS
=V
GS
V
DS
=600V, V
GS
=0V
V
DS
=600V, V
GS
=0V
T
C
=125
℃
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=6.5A
V
DS
=10V, I
D
=6.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
Min. Typ. Max.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.55
10
2162
183
14.6
30
85
140
90
41
13
10.5
-
4.0
1
100
±100
0.65
-
2882
244
19.4
-
-
-
-
63
-
-
Unit
V
V
uA
nA
Ω
S
pF
V
DD
=300V, I
D
=13A
R
G
=25Ω
-
③
④
-
-
-
-
ns
V
DS
=480V, V
GS
=10V
I
D
=13A
nC
③
④
-
Source-Drain Diode Ratings and Characteristics
(T
C
=25°C unless otherwise noted)
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
Symbol
I
S
I
SP
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=13A
I
S
=13A, V
GS
=0V
dI
S
/dt=100A/us
Min.
-
-
-
-
-
Typ. Max. Unit
-
-
-
510
4.3
13
52
1.4
-
-
A
V
ns
uC
Note ;
①
Repetitive rating : Pulse width limited by maximum junction temperature
②
L=5.9mH, I
AS
=13A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25℃
③
Pulse Test : Pulse width≤300us, Duty cycle≤2%
④
Essentially independent of operating temperature
KSD-T0V001-001
2
SMK1360CI
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
℃
Fig. 2 I
D
- V
GS
-
Fig. 3 R
DS(on)
- I
D
℃
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig.6 V
GS
- Q
G
℃
KSD-T0V001-001
3
SMK1360CI
Electrical Characteristic Curves
Fig. 7 V
DSS
- T
J
Fig.8 R
DS(on)
- T
J
C
C
Fig. 9 I
D
- T
C
Fig. 10 Safe Operating Area
*
KSD-T0V001-001
4
Fig. 11 Gate Charge Test Circuit & Waveform
SMK1360CI
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T0V001-001
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
