PMEG6010ELR
3 June 2014
SO
D
123
W
60 V, 1 A low leakage current Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat
lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
Average forward current: I
F(AV)
≤ 1 A
Reverse voltage: V
R
≤ 60 V
Extremely low leakage current
Low forward voltage
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
AEC-Q101 qualified
High temperature T
j
≤ 175 °C
3. Applications
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
4. Quick reference data
Table 1.
Symbol
I
F(AV)
V
F
I
R
Quick reference data
Parameter
average forward
current
forward voltage
reverse current
Conditions
δ = 0.5; f = 20 kHz; T
sp
≤ 170 °C;
square wave
I
F
= 1 A; T
j
= 25 °C
V
R
= 60 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C; pulsed
-
-
605
90
660
300
mV
nA
Min
-
Typ
-
Max
1
Unit
A
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NXP Semiconductors
PMEG6010ELR
60 V, 1 A low leakage current Schottky barrier rectifier
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
[1]
anode
Simplified outline
1
2
Graphic symbol
1
2
sym001
SOD123W
The marking bar indicates the cathode.
[1]
6. Ordering information
Table 3.
Ordering information
Package
Name
PMEG6010ELR
SOD123W
Description
plastic surface mounted package; 2 leads
Version
SOD123W
Type number
7. Marking
Table 4.
Marking codes
Marking code
K1
Type number
PMEG6010ELR
PMEG6010ELR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
3 June 2014
2 / 15
NXP Semiconductors
PMEG6010ELR
60 V, 1 A low leakage current Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
F(AV)
Parameter
forward current
average forward current
Conditions
T
sp
= 165 °C; δ = 1
δ = 0.5; f = 20 kHz; T
sp
≤ 170 °C;
square wave
δ = 0.5; f = 20 kHz; T
amb
≤ 140 °C;
square wave
I
FSM
P
tot
non-repetitive peak forward
current
total power dissipation
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤ 25 °C
[2]
[3]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-55
-65
Max
1.41
1
1
50
680
1150
2140
175
175
175
Unit
A
A
A
A
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
2
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
Conditions
in free air
[1][2]
[1][3]
[1][4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
220
130
70
18
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
2
PMEG6010ELR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
3 June 2014
3 / 15
NXP Semiconductors
PMEG6010ELR
60 V, 1 A low leakage current Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
0.1
10
0.02
1
0
0.75
0.33
0.2
0.05
0.01
006aab362
10
- 1
10
- 3
10
- 2
10
- 1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
10
0.1
0.02
1
0
0.75
0.33
0.2
0.05
0.01
006aab363
10
- 1
10
- 3
10
- 2
10
- 1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6010ELR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
3 June 2014
4 / 15
NXP Semiconductors
PMEG6010ELR
60 V, 1 A low leakage current Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
0.1
0.02
1
0
0.75
0.33
0.2
0.05
0.01
006aab364
10
10
- 1
10
- 3
10
- 2
10
- 1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6010ELR
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
3 June 2014
5 / 15
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