RISC Microprocessor, 64-Bit, 180MHz, CMOS, CPGA223, CERAMIC, PGA-223
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | IDT (Integrated Device Technology) |
零件包装代码 | PGA |
包装说明 | PGA, PGA223,18X18 |
针数 | 223 |
Reach Compliance Code | not_compliant |
ECCN代码 | 3A001.A.3 |
地址总线宽度 | 64 |
位大小 | 64 |
边界扫描 | YES |
最大时钟频率 | 90 MHz |
外部数据总线宽度 | 64 |
格式 | FLOATING POINT |
集成缓存 | YES |
JESD-30 代码 | S-CPGA-P223 |
JESD-609代码 | e0 |
低功率模式 | YES |
端子数量 | 223 |
最高工作温度 | 85 °C |
最低工作温度 | |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | PGA |
封装等效代码 | PGA223,18X18 |
封装形状 | SQUARE |
封装形式 | GRID ARRAY |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 3.3 V |
认证状态 | Not Qualified |
速度 | 180 MHz |
最大压摆率 | 1100 mA |
最大供电电压 | 3.465 V |
最小供电电压 | 3.135 V |
标称供电电压 | 3.3 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | OTHER |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | PIN/PEG |
端子节距 | 2.54 mm |
端子位置 | PERPENDICULAR |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
uPs/uCs/外围集成电路类型 | MICROPROCESSOR, RISC |
79RV5000180G | 79RV5000180BS272 | 79RV5000180BS272I | 79RV5000200BS272I | 79RV5000200G | 79RV5000200BS272 | 79RV5000250BS272 | |
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描述 | RISC Microprocessor, 64-Bit, 180MHz, CMOS, CPGA223, CERAMIC, PGA-223 | RISC Microprocessor, 64-Bit, 180MHz, PBGA272, SBGA-272 | RISC Microprocessor, 64-Bit, 180MHz, PBGA272, SBGA-272 | RISC Microprocessor, 64-Bit, 200MHz, PBGA272, SBGA-272 | RISC Microprocessor, 64-Bit, 200MHz, CMOS, CPGA223, CERAMIC, PGA-223 | RISC Microprocessor, 64-Bit, 200MHz, PBGA272, SBGA-272 | RISC Microprocessor, 64-Bit, 250MHz, PBGA272, SBGA-272 |
零件包装代码 | PGA | BGA | BGA | BGA | PGA | BGA | BGA |
包装说明 | PGA, PGA223,18X18 | BGA, | BGA, | BGA, | PGA, PGA223,18X18 | BGA, | BGA, |
针数 | 223 | 272 | 272 | 272 | 223 | 272 | 272 |
Reach Compliance Code | not_compliant | unknown | compliant | compliant | not_compliant | unknown | compliant |
ECCN代码 | 3A001.A.3 | 3A001.A.3 | 3A001.A.3 | 3A001.A.3 | 3A001.A.3 | 3A001.A.3 | 3A001.A.3 |
地址总线宽度 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
位大小 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
边界扫描 | YES | YES | YES | YES | YES | YES | YES |
最大时钟频率 | 90 MHz | 90 MHz | 90 MHz | 100 MHz | 100 MHz | 100 MHz | 125 MHz |
外部数据总线宽度 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
格式 | FLOATING POINT | FLOATING POINT | FLOATING POINT | FLOATING POINT | FLOATING POINT | FLOATING POINT | FLOATING POINT |
集成缓存 | YES | YES | YES | YES | YES | YES | YES |
JESD-30 代码 | S-CPGA-P223 | S-PBGA-B272 | S-PBGA-B272 | S-PBGA-B272 | S-CPGA-P223 | S-PBGA-B272 | S-PBGA-B272 |
低功率模式 | YES | YES | YES | YES | YES | YES | YES |
端子数量 | 223 | 272 | 272 | 272 | 223 | 272 | 272 |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | PGA | BGA | BGA | BGA | PGA | BGA | BGA |
封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
速度 | 180 MHz | 180 MHz | 180 MHz | 200 MHz | 200 MHz | 200 MHz | 250 MHz |
最大供电电压 | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V | 3.465 V |
最小供电电压 | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
标称供电电压 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | NO | YES | YES | YES | NO | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | OTHER | OTHER | INDUSTRIAL | INDUSTRIAL | OTHER | OTHER | OTHER |
端子形式 | PIN/PEG | BALL | BALL | BALL | PIN/PEG | BALL | BALL |
端子位置 | PERPENDICULAR | BOTTOM | BOTTOM | BOTTOM | PERPENDICULAR | BOTTOM | BOTTOM |
uPs/uCs/外围集成电路类型 | MICROPROCESSOR, RISC | MICROPROCESSOR, RISC | MICROPROCESSOR, RISC | MICROPROCESSOR, RISC | MICROPROCESSOR, RISC | MICROPROCESSOR, RISC | MICROPROCESSOR, RISC |
是否无铅 | 不含铅 | - | 含铅 | 含铅 | 不含铅 | - | 含铅 |
是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 不符合 | - | 不符合 |
厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) |
JESD-609代码 | e0 | - | e0 | e0 | e0 | - | e0 |
峰值回流温度(摄氏度) | NOT SPECIFIED | - | 225 | 225 | NOT SPECIFIED | - | 225 |
端子面层 | Tin/Lead (Sn/Pb) | - | TIN LEAD | TIN LEAD | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | 20 | 20 | NOT SPECIFIED | - | 20 |
Base Number Matches | - | 1 | 1 | 1 | 1 | 1 | - |
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