PMEG3050EP
5 A low V
F
MEGA Schottky barrier rectifier
Rev. 01 — 10 December 2009
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features
Average forward current: I
F(AV)
≤
5 A
Reverse voltage: V
R
≤
30 V
Low forward voltage
High power capability due to clip-bond technology
AEC-Q101 qualified
Small and flat lead SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch Mode Power Supply (SMPS)
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Quick reference data
T
j
= 25
°
C unless otherwise specified.
Symbol
I
F(AV)
Parameter
average forward current
Conditions
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
35
°C
T
sp
≤
130
°C
V
R
V
F
I
R
[1]
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
315
2.6
5
5
30
360
8
A
A
V
mV
mA
reverse voltage
forward voltage
reverse current
I
F
= 5 A
V
R
= 30 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
NXP Semiconductors
PMEG3050EP
5 A low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
1
2
sym001
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG3050EP
-
Description
plastic surface-mounted package; 2 leads
Version
SOD128
Type number
4. Marking
Table 4.
Marking codes
Marking code
A7
Type number
PMEG3050EP
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F(AV)
Parameter
reverse voltage
average forward current
Conditions
T
j
= 25
°C
square wave;
δ
= 0.5;
f = 20 kHz
T
amb
≤
35
°C
T
sp
≤
130
°C
I
FSM
P
tot
non-repetitive peak
forward current
total power dissipation
square wave;
t
p
= 8 ms
T
amb
≤
25
°C
[2]
[1]
Min
-
Max
30
Unit
V
-
-
-
-
-
-
5
5
70
625
1050
2100
A
A
A
mW
mW
mW
[3][4]
[3][5]
[3][1]
PMEG3050EP_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 10 December 2009
2 of 13
NXP Semiconductors
PMEG3050EP
5 A low V
F
MEGA Schottky barrier rectifier
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
[5]
Parameter
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
−55
−65
Max
150
+150
+150
Unit
°C
°C
°C
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
T
j
= 25
°C
prior to surge.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1][2]
[3]
[4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
200
120
60
12
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
[5]
[6]
thermal resistance from
junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
PMEG3050EP_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 10 December 2009
3 of 13
NXP Semiconductors
PMEG3050EP
5 A low V
F
MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.25
0.1
10
0.02
0.05
0.01
0.75
0.33
0.2
006aab752
1
0
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 1.
10
3
Z
th(j-a)
(K/W)
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab753
duty cycle =
1
0.5
0.25
0.75
0.33
0.2
0.05
0.02
0.01
10
0.1
1
0
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3050EP_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 10 December 2009
4 of 13
NXP Semiconductors
PMEG3050EP
5 A low V
F
MEGA Schottky barrier rectifier
10
2
Z
th(j-a)
(K/W)
10
006aab754
duty cycle =
1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
0.01
1
0
10
−1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 1 A
I
F
= 3 A
I
F
= 5 A
I
R
C
d
reverse current
diode capacitance
V
R
= 5 V
V
R
= 30 V
f = 1 MHz
V
R
= 1 V
V
R
= 10 V
-
-
800
260
-
-
pF
pF
Min
-
-
-
-
-
Typ
240
285
315
330
2.6
Max
275
340
360
-
8
Unit
mV
mV
mV
μA
mA
PMEG3050EP_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 10 December 2009
5 of 13
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