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MBRD1040-T

产品描述Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, PLASTIC, DPAK-3
产品类别分立半导体    二极管   
文件大小67KB,共3页
制造商Diodes Incorporated
标准
下载文档 详细参数 全文预览

MBRD1040-T概述

Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, PLASTIC, DPAK-3

MBRD1040-T规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Diodes Incorporated
零件包装代码DPAK
包装说明R-PSSO-G2
针数3
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性LOW POWER LOSS, FREE WHEELING DIODE
应用EFFICIENCY
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.41 V
JESD-30 代码R-PSSO-G2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流100 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最大输出电流10 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压40 V
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间40

MBRD1040-T文档预览

MBRD1040
10A LOW VF SCHOTTKY BARRIER RECTIFIER
SPICE MODEL: MBRD1040
Features
NEW PRODUCT
·
·
·
·
·
·
·
·
Guard Ring Die Construction for
Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Maximum Junction Temperature Rating
Very Low Forward Voltage Drop
Very Low Leakage Current
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
A
P
4
E
G
H
J
DPAK
Dim
A
B
C
D
E
G
H
J
Min
6.3
¾
0.3
2.1
0.4
1.2
5.3
1.3
1.0
5.1
Max
6.7
10
0.8
2.5
0.6
1.6
5.7
1.8
¾
5.5
B
1
2
3
2.3 Nominal
Mechanical Data
·
·
·
·
·
Case: DPAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking Information: See Page 2
Weight: 0.4 grams (approx.)
M
D
C
PIN 1
PIN 3
K
L
PIN 4, BOTTOMSIDE
HEAT SINK
K
L
M
P
0.5 Nominal
Note:
Pins 1 & 3 must be electrically
connected at the printed circuit board.
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Also see Figure 4)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Typical Thermal Resistance Junction to Case
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
R
qJC
R
qJA
T
j
T
STG
@ T
A
= 25°C unless otherwise specified
Symbol
V
(BR)R
V
FM
I
RM
C
j
Min
40
¾
¾
¾
¾
¾
¾
Typ
¾
0.45
¾
0.47
0.1
12.5
700
Max
¾
0.49
0.41
0.51
0.3
25
¾
Unit
V
V
mA
pF
Test Condition
I
R
= 1mA
I
F
= 8A, T
S
= 25°C
I
F
= 8A, T
S
= 125°C
I
F
= 10A, T
S
= 25°C
T
S
= 25°C, V
R
= 35V
T
S
= 100°C, V
R
= 35V
f = 1.0MHz, V
R
= 4.0V DC
Value
40
28
10
100
6.0
80
-65 to +150
-65 to +150
Unit
V
V
A
A
°C/W
°C/W
°C
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage (Note 1)
Peak Reverse Current (Note 1)
Junction Capacitance
Notes:
1. Short duration test pulse used to minimize self-heating effect.
DS30282 Rev. 3 - 2
1 of 3
www.diodes.com
MBRD1040
ã
Diodes Incorporated
Ordering Information
(Note 2)
NEW PRODUCT
Device
MBRD1040-T
Notes:
Packaging
DPAK
Shipping
2500/Tape & Reel
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MBRD1040 = Product type marking code
= Manufacturers’ code marking
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
YWW
MBRD1040
100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (mA)
1000
T
A
= +150ºC
10
T
A
= +150°C
100
1
T
A
= +25°C
10
T
A
= +100ºC
0.1
1
0.01
T
A
= +75°C
T
A
= +75ºC
0.001
0.1
T
A
= +25ºC
0.0001
0
100
200
300
400
500
600
V
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
10,000
0.01
0
5
10
15
20
25
30
35
40
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
12
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
C
j
, JUNCTION CAPACITANCE (pF)
f = 1MHz
Note 3
10
8
Note 4
1000
6
Note 5
4
2
0
-25
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 4 DC Forward Current Derating
100
0
5
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (V)
Fig. 3 Typical Junction Capacitance vs. Reverse Voltage
DS30282 Rev. 3 - 2
2 of 3
www.diodes.com
MBRD1040
P
F(AV)
, AVERAGE FORWARD POWER DISSIPATION (W)
8
7
6
5
DC
4
3
2
1
0
0
3 4.5 6 7.5 9 10.5 12 13.5 15
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Fig. 5 Forward Power Dissipation (Per Element)
1.5
Note 6
T
j
= 150°C
Note 7
NEW PRODUCT
Notes:
3. T
A
= T
SOLDERING POINT
, R
qJC
= 6.0°C/W, R
qCA
= 0°C/W.
4. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R
qJA
in range of 15-30°C/W.
5. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R
qJA
in range of
60-75°C/W.
6. Maximum power disspiation when the device is mounted in accordance to the conditions described in Note 5.
7. Maximum power disspation when the device is mounted in accordance to the conditions described in Note 4.
DS30282 Rev. 3 - 2
3 of 3
www.diodes.com
MBRD1040
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