PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
Rev. 04 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection encapsulated in small SMD plastic packages.
Table 1.
Product overview
Package
NXP
PMEG3020EH
PMEG3020EJ
SOD123F
SOD323F
JEITA
-
SC-90
single isolated diodes
single isolated diodes
Configuration
Type number
1.2 Features
Forward current: 2 A
Reverse voltage: 30 V
Ultra low forward voltage
Small and flat lead SMD package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switched-mode power supply
Inverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 2000 mA
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
510
Max
2
30
620
Unit
A
V
mV
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
001aab540
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG3020EH
PMEG3020EJ
-
SC-90
Description
plastic surface mounted package; 2 leads
plastic surface mounted package; 2 leads
Version
SOD123F
SOD323F
Type number
4. Marking
Table 5.
Marking codes
Marking code
A7
E9
Type number
PMEG3020EH
PMEG3020EJ
PMEG3020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2010
2 of 9
NXP Semiconductors
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
I
FRM
I
FSM
P
tot
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
PMEG3020EH
PMEG3020EJ
T
j
T
amb
T
stg
[1]
[2]
Conditions
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.25
t = 8 ms; square
wave
T
amb
≤
25
°C
[1]
[2]
[1]
[2]
[1]
Min
-
-
-
-
Max
30
2
4.5
9
Unit
V
A
A
A
-
-
-
-
-
−65
−65
375
830
360
830
150
+150
+150
mW
mW
mW
mW
°C
°C
°C
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG3020EH
PMEG3020EJ
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG3020EH
PMEG3020EJ
[1]
[2]
Conditions
in free air
[1][2]
[2][3]
[1][2]
[2][3]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
330
150
350
150
K/W
K/W
K/W
K/W
-
-
-
-
60
55
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
2
.
[3]
PMEG3020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2010
3 of 9
NXP Semiconductors
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1000 mA
I
F
= 2000 mA
I
R
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
Typ
125
185
255
330
400
510
60
400
60
Max
160
220
290
380
480
620
150
1000
72
Unit
mV
mV
mV
mV
mV
mV
μA
μA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 10 V
V
R
= 30 V
V
R
= 1 V; f = 1 MHz
10
4
I
F
(mA)
10
3
006aaa293
10
6
I
R
(μA) 10
5
10
4
(1)
(2)
(3)
006aaa294
10
2
(1)
(2)
(3)
(4)
(5)
10
3
10
2
(4)
10
10
1
1
10
−1
10
−1
0
0.1
0.2
0.3
0.4
0.5
V
F
(V)
0.6
10
−2
0
5
(5)
10
15
20
25
30
V
R
(V)
35
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
Reverse current as a function of reverse
voltage; typical values
PMEG3020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2010
4 of 9
NXP Semiconductors
PMEG3020EH; PMEG3020EJ
30 V, 2 A ultra low V
F
MEGA Schottky barrier rectifiers
140
C
d
(pF)
120
100
80
60
40
20
0
0
5
10
15
20
006aaa295
25
30
V
R
(V)
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
8. Package outline
1.7
1.5
1
0.55
0.35
3.6
3.4
2.7
2.5
2.7
2.3
1.8
1.6
1.2
1.0
1.35
1.15
1
0.5
0.3
0.80
0.65
2
0.70
0.55
Dimensions in mm
0.25
0.10
04-11-29
Dimensions in mm
2
0.40
0.25
0.25
0.10
04-09-13
Fig 4.
Package outline SOD123F
Fig 5.
Package outline SOD323F (SC-90)
9. Packing information
Table 9.
Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.
[1]
Type number
PMEG3020EH
PMEG3020EJ
[1]
Package
SOD123F
SOD323F
Description
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
-115
-115
10000
-135
-135
For further information and the availability of packing methods, see
Section 13.
PMEG3020EH_EJ_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 4 February 2010
5 of 9
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