PMEG10030ELP
7 May 2015
SO
D1
28
100 V, 3 A low leakage current Schottky barrier rectifier
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
Extremely low leakage current I
R
= 110 nA
Reverse voltage: V
R
≤ 100 V
Average forward current: I
F(AV)
≤ 3 A
High power capability due to clip-bonding technology
High temperature T
j
≤ 175 °C
Small and flat lead SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
4. Quick reference data
Table 1.
Symbol
I
F(AV)
V
R
V
F
I
R
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5; f = 20 kHz; T
sp
≤ 160 °C;
square wave
T
j
= 25 °C
I
F
= 3 A; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
V
R
= 100 V; t
p
≤ 300 µs; δ ≤ 0.02;
T
j
= 25 °C
-
110
450
nA
-
-
-
710
100
770
V
mV
Min
-
Typ
-
Max
3
Unit
A
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NXP Semiconductors
PMEG10030ELP
100 V, 3 A low leakage current Schottky barrier rectifier
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
[1]
anode
Simplified outline
1
2
Graphic symbol
1
2
sym001
SOD128
[1]
The marking bar indicates the cathode.
6. Ordering information
Table 3.
Ordering information
Package
Name
PMEG10030ELP
SOD128
Description
plastic surface-mounted package; 2 leads
Version
SOD128
Type number
7. Marking
Table 4.
Marking codes
Marking code
DJ
Type number
PMEG10030ELP
PMEG10030ELP
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 May 2015
2 / 15
NXP Semiconductors
PMEG10030ELP
100 V, 3 A low leakage current Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
Parameter
reverse voltage
forward current
average forward current
Conditions
T
j
= 25 °C
T
sp
= 155 °C; δ = 1
δ = 0.5; f = 20 kHz; T
amb
≤ 55 °C;
square wave
δ = 0.5; f = 20 kHz; T
sp
≤ 160 °C;
square wave
I
FSM
P
tot
non-repetitive peak forward
current
total power dissipation
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤ 25 °C
[2]
[3]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-55
-65
Max
100
4.2
3
3
70
750
1250
2500
175
175
175
Unit
V
A
A
A
A
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
2
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
[1]
[2]
[3]
[4]
[5]
Conditions
in free air
[1][2]
[1][3]
[1][4]
[5]
Min
-
-
-
-
Typ
-
-
-
-
Max
200
120
60
12
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
Soldering point of cathode tab.
2
PMEG10030ELP
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 May 2015
3 / 15
NXP Semiconductors
PMEG10030ELP
100 V, 3 A low leakage current Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.5
0.33
0.2
aaa-016490
0.1
0.25
10
0.05
0.02
0.01
1
0
10
-1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
2
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
aaa-016491
0.5
0.25
10
0.05
0.01
0.1
0.02
1
0
10
-1
10
-3
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG10030ELP
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 May 2015
4 / 15
NXP Semiconductors
PMEG10030ELP
100 V, 3 A low leakage current Schottky barrier rectifier
10
2
Z
th(j-a)
(K/W)
10
aaa-016492
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
0.01
0
0.02
1
10
-1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG10030ELP
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
7 May 2015
5 / 15
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