Standard SRAM, 256KX4, 25ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | Cypress(赛普拉斯) |
零件包装代码 | DIP |
包装说明 | DIP, |
针数 | 28 |
Reach Compliance Code | compliant |
ECCN代码 | 3A001.A.2.C |
最长访问时间 | 25 ns |
其他特性 | AUTOMATIC POWER-DOWN |
JESD-30 代码 | R-GDIP-T28 |
JESD-609代码 | e0 |
长度 | 37.0205 mm |
内存密度 | 1048576 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 4 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 28 |
字数 | 262144 words |
字数代码 | 256000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 256KX4 |
输出特性 | 3-STATE |
可输出 | YES |
封装主体材料 | CERAMIC, GLASS-SEALED |
封装代码 | DIP |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED |
认证状态 | Not Qualified |
座面最大高度 | 5.08 mm |
最小待机电流 | 2 V |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | MILITARY |
端子面层 | TIN LEAD |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
宽度 | 7.62 mm |
CY7C1006L-25DMB | CY7C1006L-15DMB | CY7C1006L-15PC | CY7C1006L-12PC | CY7C1006L-20PC | CY7C1006L-20DMB | CY7C1006L-25PC | |
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描述 | Standard SRAM, 256KX4, 25ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | Standard SRAM, 256KX4, 15ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | Standard SRAM, 256KX4, 15ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Standard SRAM, 256KX4, 12ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Standard SRAM, 256KX4, 20ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 | Standard SRAM, 256KX4, 20ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28 | Standard SRAM, 256KX4, 25ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28 |
是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
厂商名称 | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) | Cypress(赛普拉斯) |
零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
包装说明 | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, |
针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A991.B.2.B | 3A991.B.2.B | 3A991.B.2.B | 3A001.A.2.C | EAR99 |
最长访问时间 | 25 ns | 15 ns | 15 ns | 12 ns | 20 ns | 20 ns | 25 ns |
其他特性 | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN | AUTOMATIC POWER-DOWN |
JESD-30 代码 | R-GDIP-T28 | R-GDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-PDIP-T28 | R-GDIP-T28 | R-PDIP-T28 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
长度 | 37.0205 mm | 37.0205 mm | 35.4965 mm | 35.4965 mm | 35.4965 mm | 37.0205 mm | 35.4965 mm |
内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
字数 | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
字数代码 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 70 °C | 70 °C | 70 °C | 125 °C | 70 °C |
组织 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 | 256KX4 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
可输出 | YES | YES | YES | YES | YES | YES | YES |
封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY |
封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 5.08 mm | 5.08 mm | 4.826 mm | 4.826 mm | 4.826 mm | 5.08 mm | 4.826 mm |
最小待机电流 | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V | 2 V |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | MILITARY | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | COMMERCIAL |
端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
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