SA5.0 thru SA170CA
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of sensor
units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over passivated chip
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DO-204AC (DO-15)
PRIMARY CHARACTERISTICS
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 170 V
500 W
3.0 W
70 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C or CA suffix
(e.g. SA5.0C, SA170CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
A
= 75 °C (Fig. 5)
Peak forward surge current, 10 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 35 A for uni-directional only
Operating junction and storage temperature range
(2)
SYMBOL
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
VALUE
500
See next table
3.0
70
3.5
- 55 to + 175
UNIT
W
A
W
A
V
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 per minute maximum
Document Number: 88378
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
SA5.0 thru SA170CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
BREAKDOWN VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
44.4
44.4
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
MAX.
54.3
49.1
58.4
52.8
61.1
55.3
65.2
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-
OFF
VOLTAGE
V
WM
(V)
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D (3)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
7.0
7.8
6.5
7.2
6.2
6.9
5.8
6.5
5.5
6.1
5.2
5.7
4.9
5.3
4.7
5.2
4.4
4.9
4.0
4.4
3.7
4.1
3.6
4.0
3.3
3.6
3.1
3.4
2.8
3.1
2.6
2.8
2.3
2.6
2.2
2.4
1.9
2.1
1.7
1.9
1.6
1.8
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
71.4
64.5
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
230
209
268
243
257
259
304
275
MAXIMUM
TEMPERATURE
COEFFICIENT
OF V
BR
(mV/°C)
51
46
55
50
58
52
63
56
66
61
71
65
78
70
80
71
86
76
94
85
101
91
105
95
114
103
121
110
135
123
148
133
162
146
175
158
203
184
217
196
230
208
DEVICE
TYPE
SA40
SA40A
SA43
SA43A
SA45
SA45A
SA48
SA48A
SA51
SA51A
SA54
SA54A
SA58
SA58A
SA60
SA60A
SA64
SA64A
SA70
SA70A
SA75
SA75A
SA78
SA78A
SA85
SA85A
SA90
SA90A
SA100
SA100A
SA110
SA110A
SA120
SA120A
SA130
SA130A
SA150
SA150A
SA160
SA160A
SA170
SA170A
Notes:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types with V
WM
of 10 V and less, the I
D
limit is doubled
(4) For the bi-directional SA5.0CA, the maximum V
BR
is 7.25 V
(5) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number: 88378
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
SA5.0 thru SA170CA
Vishay General Semiconductor
ORDERING INFORMATION
(Example)
PREFERRED P/N
SA5.0A-E3/54
SA5.0AHE3/54
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.432
0.432
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
4000
4000
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
30
150
I
PPM
- Peak Pulse Current,
%
I
RSM
P
PPM -
Peak Pulse Power (kW)
10
Non-Repetitive
Pulse
Waveform
shown in Fig. 3
T
A
= 25 °C
t
r
= 10
µs
Peak
Value
I
PPM
100
Half
Value
- I
PP
I
PPM
2
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50
%
of I
PPM
P
PK
”0.5”
1.0
P
PK
t
d
t
d
Impulse
Exponential
Decay
Half Sine
t
d
= 7
t
p
50
10/1000
µs Waveform
as defined
by
R.E.A.
P
PK
Square
t
d
Current
Waveforms
t
d
0
0
1.0
2.0
3.0
4.0
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
t
d
- Pulse
Width
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
I
FSM -
Peak Forward Surge Current (A)
100
200
8.3
ms Single Half Sine-Wave
100
75
50
25
0
0
25
50
75
100
125
150
175
200
10
1
10
100
T
J
- Initial Temperature (°C)
Number
of Cycles at 60 Hz
Figure 2. Pulse Derating Curve
Figure 4. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
www.vishay.com
4
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88378
Revision: 21-Oct-08
SA5.0 thru SA170CA
Vishay General Semiconductor
4.0
100
V
C
- Incremental Clamping
Voltage
P
D
- Power Dissipation (W)
60 Hz
Resistive or
Inductive Load
3.0
SA170
10
SA110
SA70
SA40
Waveform:
10 x 1000 Impulse
DVC =
V
C
-
V
BR
SA24
2.0
SA15
1.0
L = 0.375" (9.5 mm)
Lead Lengths
1.0
SA9.0
SA5.0
0
0
25
50
75
100
125
150
175
200
0.1
0.5
1
10
50
T
L
- Lead Temperature (°C)
I
PP
- Peak Pulse Current (A)
Figure 5. Steady State Power Derating Curve
Figure 8. Incremental Clamping Voltage Curve Uni-Directional
10 000
100
V
C
- Incremental Clamping
Voltage
Uni-Directional
Bi-Directional
Waveform:
8
x 20 Impulse
DVC =
V
C
-
V
BR
SA170
SA110
SA70
SA60
SA40
SA30
SA24
SA15
SA9.0
SA6.5
C
J -
Capaciatnce (pF)
1000
V
R
= 0
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
100
V
R
= Rated
Stand-Off
voltage
1.0
10
5
100
500
0.1
0.5
1
10
50
V
WM
- Reverse Stand-Off
Voltage
(V)
I
PP
- Peak Pulse Current (A)
Figure 6. Capacitance
Figure 9. Incremental Clamping Voltage Curve Bi-Directional
100
100
SA110
SA70
SA54
SA40
SA30
SA24
SA18
SA15
SA12
SA5.0
SA9.0
V
C
- Incremental Clamping
Voltage
V
C
- Incremental Clamping
Voltage
Waveform:
8
x 20 Impulse
DVC =
V
C
-
V
BR
10
SA170
SA170
10
SA110
SA70
SA40
Waveform:
10 x 1000 Impulse
DVC =
V
C
-
V
BR
SA24
SA15
SA9.0
1.0
1.0
SA6.5
0.1
0.5
1
10
50
0.1
0.5
1
10
50
I
PP
- Peak Pulse Current (A)
I
PP
- Peak Pulse Current (A)
Figure 7. Incremental Clamping Voltage Curve Uni-Directional
Figure 10. Incremental Clamping Voltage Curve Bi-Directional
www.vishay.com
5
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88378
Revision: 21-Oct-08
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
