DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D252
BGY685A
600 MHz, 18.2 dB gain push-pull
amplifier
Product specification
Supersedes data of 1998 Mar 16
2001 Oct 22
Philips Semiconductors
Product specification
600 MHz, 18.2 dB gain push-pull amplifier
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability.
DESCRIPTION
Special super-high dynamic range amplifier module
designed for applications in CATV systems with a
bandwidth of 40 to 600 MHz operating at a voltage supply
of 24 V (DC).
PINNING - SOT115J
PIN
1
2
3
5
7
8
9
input
common
common
+V
B
common
common
output
BGY685A
DESCRIPTION
handbook, halfpage
1
2
3
8
5 7 9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G
p
I
tot
PARAMETER
power gain
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 600 MHz
V
B
= 24 V
MIN.
17.7
19
−
TYP.
−
−
220
MAX.
18.7
−
240
UNIT
dB
dB
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
i
T
stg
T
mb
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
−
−40
−20
MIN.
MAX.
65
+100
+100
UNIT
dBmV
°C
°C
2001 Oct 22
2
Philips Semiconductors
Product specification
600 MHz, 18.2 dB gain push-pull amplifier
CHARACTERISTICS
Table 1
Bandwidth 40 to 600 MHz; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 600 MHz
SL
FL
S
11
f = 40 to 600 MHz
f = 40 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 600 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 600 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 541.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 596.5 MHz.
2. f
p
= 590.25 MHz; V
p
= V
o
;
f
q
= 597.25 MHz; V
q
= V
o
−6
dB;
f
r
= 599.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 588.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
f = 50 MHz
MIN.
17.7
19
0.5
−
20
19
18
20
19
18
−45
−
2.2
BGY685A
SYMBOL
G
p
MAX.
18.7
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
±0.2
−
−
−
−
−
−
+45
−55
−60
−56
−70
−
8.5
240
85 channels flat; V
o
= 44 dBmV;
−
measured at 595.25 MHz
85 channels flat; V
o
= 44 dBmV;
−
measured at 55.25 MHz
85 channels flat; V
o
= 44 dBmV;
−
measured at 596.5 MHz
note 1
d
im
=
−60
dB; note 2
f = 600 MHz
note 3
−
60
−
−
2001 Oct 22
3
Philips Semiconductors
Product specification
600 MHz, 18.2 dB gain push-pull amplifier
Table 2
Bandwidth 40 to 550 MHz; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 550 MHz
SL
FL
S
11
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 550 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 550 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 493.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 548.5 MHz.
2. f
p
= 540.25 MHz; V
p
= V
o
;
f
q
= 547.25 MHz; V
q
= V
o
−6
dB;
f
r
= 549.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 538.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
f = 50 MHz
MIN.
17.7
18.8
0.5
−
20
19
18
20
19
18
−45
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
220
BGY685A
SYMBOL
G
p
MAX.
18.7
20
2
±0.2
−
−
−
−
−
−
+45
−59
−62
−59
−72
−
8
240
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
77 channels flat; V
o
= 44 dBmV;
−
measured at 547.25 MHz
77 channels flat; V
o
= 44 dBmV;
−
measured at 55.25 MHz
77 channels flat; V
o
= 44 dBmV;
−
measured at 548.5 MHz
note 1
d
im
=
−60
dB; note 2
f = 550 MHz
note 3
−
61.5
−
−
2001 Oct 22
4
Philips Semiconductors
Product specification
600 MHz, 18.2 dB gain push-pull amplifier
Table 3
Bandwidth 40 to 450 MHz; T
case
= 30
°C;
Z
S
= Z
L
= 75
Ω
PARAMETER
power gain
slope cable equivalent
flatness of frequency response
input return losses
CONDITIONS
f = 50 MHz
f = 450 MHz
SL
FL
S
11
f = 40 to 450 MHz
f = 40 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
S
22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
S
21
CTB
X
mod
CSO
d
2
V
o
F
I
tot
Notes
1. f
p
= 55.25 MHz; V
p
= 46 dBmV;
f
q
= 391.25 MHz; V
q
= 46 dBmV;
measured at f
p
+ f
q
= 446.5 MHz.
2. f
p
= 440.25 MHz; V
p
= V
o
;
f
q
= 447.25 MHz; V
q
= V
o
−6
dB;
f
r
= 449.25 MHz; V
r
= V
o
−6
dB;
measured at f
p
+ f
q
−
f
r
= 438.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
f = 50 MHz
MIN.
17.7
18.6
0.5
−
20
19
18
20
19
18
−45
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
220
BGY685A
SYMBOL
G
p
MAX.
18.7
19.8
1.8
±0.2
−
−
−
−
−
−
+45
−61
−61
−61
−75
−
7
240
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
60 channels flat; V
o
= 46 dBmV;
−
measured at 445.25 MHz
60 channels flat; V
o
= 46 dBmV;
−
measured at 55.25 MHz
60 channels flat; V
o
= 46 dBmV;
−
measured at 446.5 MHz
note 1
d
im
=
−60
dB; note 2
f = 450 MHz
note 3
−
64
−
−
2001 Oct 22
5
Microchip MCU
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