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KM23V16000DG-15: 产品描述MASK ROM, 1MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44; 产品类别存储存储; 文件大小105KB，共5页; 制造商SAMSUNG(三星); 官网地址http://www.samsung.com/Products/Semiconductor/

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KM23V16000DG-15概述

MASK ROM, 1MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44

KM23V16000DG-15规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	SAMSUNG(三星)
零件包装代码	SOIC
包装说明	SOP, SOP44,.63
针数	44
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	150 ns
其他特性	IT CAN ALSO OPERATE AT 3.3V VCC
备用内存宽度	8
JESD-30 代码	R-PDSO-G44
JESD-609代码	e0
长度	28.5 mm
内存密度	16777216 bit
内存集成电路类型	MASK ROM
内存宽度	16
功能数量	1
端子数量	44
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	1MX16
封装主体材料	PLASTIC/EPOXY
封装代码	SOP
封装等效代码	SOP44,.63
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3/3.3 V
认证状态	Not Qualified
座面最大高度	3.1 mm
最大待机电流	0.00003 A
最大压摆率	0.04 mA
最大供电电压 (Vsup)	3.3 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	12.6 mm

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KM23V16000D(G)

16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM

FEATURES

•

Switchable organization

2,097,152 x 8(byte mode)

1,048,576 x 16(word mode)

•

Fast access time : 100ns(Max.)

•

Supply voltage : single +3.0V/ single +3.3V

•

Current consumption

Operating : 40mA(Max.)

Standby : 30µA(Max.)

•

Fully static operation

•

All inputs and outputs TTL compatible

•

Three state outputs

•

Package

-. KM23V16000D : 42-DIP-600

-. KM23V16000DG : 44-SOP-600

CMOS MASK ROM

GENERAL DESCRIPTION

The KM23V16000D(G) is a fully static mask programmable

ROM fabricated using silicon gate CMOS process technology,

and is organized either as 2,097,152 x 8 bit(byte mode) or as

1,048,576x16 bit(word mode) depending on BHE voltage

level.(See mode selection table)

This device operates with 3.0V or 3.3V power supply, and all

inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external

clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and

data memory, character generator.

The KM23V16000D is packaged in a 42-DIP and the

KM23V16000DG in a 44-SOP.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATION

-1

BUFFERS

AND

DECODER

MEMORY CELL

MATRIX

(1,048,576x16/

2,097,152x8)

42 A

41 A

40 A

39 A

38 A

37 A

36 A

35 A

34 A

33 A

32 BHE

N.C 1

44 N.C

43 A

42 A

41 A

40 A

39 A

38 A

37 A

36 A

35 A

34 A

33 BHE

32 V

31 Q

-1

30 Q

29 Q

28 Q

27 Q

26 Q

25 Q

24 Q

23 V

BUFFERS

AND

DECODER

SENSE AMP.

DATA OUT

BUFFERS

. . .

CE 11

OE 13

DIP

BHE

CONTROL

LOGIC

Pin Name

- A

- Q

-1

BHE

N.C

Pin Function

Address Inputs

Data Outputs

Output 15(Word mode)/

LSB Address(Byte mode)

Word/Byte selection

Chip Enable

Output Enable

Power

Ground

No Connection

31 V

CE 12

30 Q

-1

29 Q

OE 14

28 Q

27 Q

26 Q

25 Q

24 Q

23 Q

22 V

SOP

KM23V16000D

KM23V16000DG

KM23V16000DG-15相似产品对比

	KM23V16000DG-15	KM23V16000DG	KM23V16000D	KM23V16000D-12	KM23V16000D-10	KM23V16000DG-10	KM23V16000DG-12
描述	MASK ROM, 1MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44	MASK ROM	MASK ROM	MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42	MASK ROM, 1MX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42	MASK ROM, 1MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44	MASK ROM, 1MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
包装说明	SOP, SOP44,.63	,	,	DIP, DIP42,.6	DIP, DIP42,.6	SOP, SOP44,.63	SOP, SOP44,.63
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
是否Rohs认证	不符合	-	-	不符合	不符合	不符合	不符合
厂商名称	SAMSUNG(三星)	-	-	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
零件包装代码	SOIC	-	-	DIP	DIP	SOIC	SOIC
针数	44	-	-	42	42	44	44
ECCN代码	EAR99	-	-	EAR99	EAR99	EAR99	EAR99
最长访问时间	150 ns	-	-	120 ns	100 ns	100 ns	120 ns
其他特性	IT CAN ALSO OPERATE AT 3.3V VCC	-	-	IT CAN ALSO OPERATE AT 3.3V VCC	IT CAN ALSO OPERATE AT 3.3V VCC	IT CAN ALSO OPERATE AT 3.3V VCC	IT CAN ALSO OPERATE AT 3.3V VCC
备用内存宽度	8	-	-	8	8	8	8
JESD-30 代码	R-PDSO-G44	-	-	R-PDIP-T42	R-PDIP-T42	R-PDSO-G44	R-PDSO-G44
JESD-609代码	e0	-	-	e0	e0	e0	e0
长度	28.5 mm	-	-	52.42 mm	52.42 mm	28.5 mm	28.5 mm
内存密度	16777216 bit	-	-	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	MASK ROM	-	-	MASK ROM	MASK ROM	MASK ROM	MASK ROM
内存宽度	16	-	-	16	16	16	16
功能数量	1	-	-	1	1	1	1
端子数量	44	-	-	42	42	44	44
字数	1048576 words	-	-	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	-	-	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	-	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	-	-	70 °C	70 °C	70 °C	70 °C
组织	1MX16	-	-	1MX16	1MX16	1MX16	1MX16
封装主体材料	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOP	-	-	DIP	DIP	SOP	SOP
封装等效代码	SOP44,.63	-	-	DIP42,.6	DIP42,.6	SOP44,.63	SOP44,.63
封装形状	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	-	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
并行/串行	PARALLEL	-	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3/3.3 V	-	-	3/3.3 V	3/3.3 V	3/3.3 V	3/3.3 V
认证状态	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.1 mm	-	-	5.08 mm	5.08 mm	3.1 mm	3.1 mm
最大待机电流	0.00003 A	-	-	0.00003 A	0.00003 A	0.00003 A	0.00003 A
最大压摆率	0.04 mA	-	-	0.04 mA	0.04 mA	0.04 mA	0.04 mA
最大供电电压 (Vsup)	3.3 V	-	-	3.3 V	3.3 V	3.3 V	3.3 V
最小供电电压 (Vsup)	2.7 V	-	-	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	-	-	3 V	3 V	3 V	3 V
表面贴装	YES	-	-	NO	NO	YES	YES
技术	CMOS	-	-	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	-	-	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	GULL WING	-	-	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
端子节距	1.27 mm	-	-	2.54 mm	2.54 mm	1.27 mm	1.27 mm
端子位置	DUAL	-	-	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	12.6 mm	-	-	15.24 mm	15.24 mm	12.6 mm	12.6 mm

KM23V16000DG-15

KM23V16000DG-15概述

KM23V16000DG-15规格参数

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