8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, FRIT SEALED, CERDIP-16
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP16,.3 |
| 针数 | 16 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | EAR99 |
| Factory Lead Time | 19 weeks |
| 其他特性 | OVERVOLTAGE PROTECTION |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER |
| JESD-30 代码 | R-GDIP-T16 |
| JESD-609代码 | e0 |
| 长度 | 19.05 mm |
| 标称负供电电压 (Vsup) | -15 V |
| 信道数量 | 8 |
| 功能数量 | 1 |
| 端子数量 | 16 |
| 标称断态隔离度 | 68 dB |
| 通态电阻匹配规范 | 105 Ω |
| 最大通态电阻 (Ron) | 1500 Ω |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP16,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | +-15 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm |
| 最大信号电流 | 0.02 A |
| 最大供电电流 (Isup) | 2 mA |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | NO |
| 最长断开时间 | 500 ns |
| 最长接通时间 | 500 ns |
| 切换 | BREAK-BEFORE-MAKE |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| HI1-0548/883 | 7705202EA | 5962-8513103EA | 77052022A | HI1-0549/883 | |
|---|---|---|---|---|---|
| 描述 | 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, FRIT SEALED, CERDIP-16 | 8-CHANNEL, SGL ENDED MULTIPLEXER, CDIP16, CERAMIC, DIP-16 | 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP16, CERAMIC, DIP-16 | 8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20 | 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, CDIP16, FRIT SEALED, CERDIP-16 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
| 零件包装代码 | DIP | DIP | DIP | QLCC | DIP |
| 包装说明 | DIP, DIP16,.3 | DIP, DIP16,.3 | DIP, DIP16,.3 | CERAMIC, LCC-20 | DIP, DIP16,.3 |
| 针数 | 16 | 16 | 16 | 20 | 16 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| Factory Lead Time | 19 weeks | 19 weeks | 19 weeks | 21 weeks | 19 weeks |
| 其他特性 | OVERVOLTAGE PROTECTION | OVERVOLTAGE PROTECTION | OVERVOLTAGE PROTECTION | OVERVOLTAGE PROTECTION | OVERVOLTAGE PROTECTION |
| 模拟集成电路 - 其他类型 | SINGLE-ENDED MULTIPLEXER | SINGLE-ENDED MULTIPLEXER | DIFFERENTIAL MULTIPLEXER | SINGLE-ENDED MULTIPLEXER | DIFFERENTIAL MULTIPLEXER |
| JESD-30 代码 | R-GDIP-T16 | R-GDIP-T16 | R-GDIP-T16 | S-CQCC-N20 | R-GDIP-T16 |
| 标称负供电电压 (Vsup) | -15 V | -15 V | -15 V | -15 V | -15 V |
| 信道数量 | 8 | 8 | 4 | 8 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 16 | 16 | 16 | 20 | 16 |
| 通态电阻匹配规范 | 105 Ω | 0.07 Ω | 105 Ω | 105 Ω | 105 Ω |
| 最大通态电阻 (Ron) | 1500 Ω | 1000 Ω | 1500 Ω | 1500 Ω | 1500 Ω |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE |
| 认证状态 | Not Qualified | Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电流 (Isup) | 2 mA | 2 mA | 2 mA | 2 mA | 2 mA |
| 标称供电电压 (Vsup) | 15 V | 15 V | 15 V | 15 V | 15 V |
| 表面贴装 | NO | NO | NO | YES | NO |
| 最长断开时间 | 500 ns | 1000 ns | 500 ns | 500 ns | 500 ns |
| 最长接通时间 | 500 ns | 1000 ns | 500 ns | 500 ns | 500 ns |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | DUAL |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | EAR99 |
| JESD-609代码 | e0 | e0 | e0 | - | e0 |
| 长度 | 19.05 mm | 19.5326 mm | 19.5326 mm | - | 19.05 mm |
| 标称断态隔离度 | 68 dB | - | - | 50 dB | 68 dB |
| 封装代码 | DIP | DIP | DIP | - | DIP |
| 封装等效代码 | DIP16,.3 | DIP16,.3 | DIP16,.3 | - | DIP16,.3 |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 电源 | +-15 V | +-15 V | +-15 V | - | +-15 V |
| 筛选级别 | 38535Q/M;38534H;883B | MIL-STD-883 | MIL-STD-883 | - | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | - | 5.08 mm |
| 最大信号电流 | 0.02 A | 0.0001 A | 0.02 A | - | 0.02 A |
| 切换 | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | BREAK-BEFORE-MAKE | - | BREAK-BEFORE-MAKE |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped | - | Tin/Lead (Sn/Pb) |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | - | 2.54 mm |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | - | 7.62 mm |
| Base Number Matches | - | 1 | 1 | 1 | - |
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