KSC5019
KSC5019
Low Saturation
• V
CE
(sat)=0.5V at I
C
=2A, I
B
=50mA
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
30
30
10
6
2
5
2
750
150
-55 ~ 150
Units
V
V
V
V
A
A
A
mW
°C
°C
* PW≤10ms, Duty Cycle≤30%
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
BV
CEO
BV
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
ob
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
V
CB
=30V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CE
=1V, I
C
=0.5A
V
CE
=1V, I
C
=2A
I
C
=2A, I
B
=50mA
V
CE
=1V, I
C
=2A
V
CE
=1V, I
C
=0.5A
V
CB
=10V, I
E
=0, f=1MHz
10
6
140
70
600
200
0.2
0.86
150
27
0.5
1.5
V
V
MHz
pF
Min.
Typ.
Max.
100
100
Units
nA
nA
V
V
h
FE
Classification
Classification
h
FE
L
140 ~ 240
M
200 ~ 330
N
300 ~ 450
P
420 ~ 600
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC5019
Typical Characteristics
5
I
B
= 50mA
I
B
= 40mA
I
B
= 30mA
EMITTER COMMON
T
a
=25℃
10,000
EMITTER COMMON
V
CE
=1V
Ic[A], COLLECTOR CURRENT
4
I
B
= 20mA
3
h
FE
, DC CURRENT GAIN
5
1,000
100
2
I
B
= 10mA
I
B
= 5mA
1
10
I
B
= 0mA
0
0
1
2
3
4
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
1
5
V
CE
(sat)[V], SATURATION VOLTAGE
EMITTER COMMON
I
C
/I
B
=40
EMITTER COMMON
V
CE
=1V
I
C
[A], COLLECTOR CURRENT
0.1
1
4
3
0.1
2
1
0.01
0
0.0
0.2
0.4
0.6
0.8
1.0
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
1000
I
C
MAX. (Pulse)
s
m
10
ms
1m
s
I
C
[A], COLLECTOR CURRENT
I
C
MAX. (DC)
1
P
C
[mW], POWER DISSIPATION
10
0
800
600
400
0.1
V
CEO
MAX.
200
0.01
0.01
0
0.1
1
10
100
0
50
o
100
150
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
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Obsolete
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©2000 Fairchild Semiconductor International
Rev. E
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