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5.0SMDJ33A

产品描述5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
产品类别半导体    分立半导体   
文件大小935KB,共7页
制造商UN semiconductor
官网地址http://www.unsemi.com.tw/
下载文档 详细参数 全文预览

5.0SMDJ33A概述

5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

5000 W, 单向, 硅, 瞬态抑制二极管, DO-214AB

5.0SMDJ33A规格参数

参数名称属性值
端子数量2
元件数量1
最大击穿电压40.6 V
最小击穿电压36.7 V
加工封装描述ROHS COMPLIANT, PLASTIC PACKAGE-2
无铅Yes
欧盟RoHS规范Yes
状态CONSULT MFR
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式C BEND
端子涂层TIN
端子位置DUAL
包装材料PLASTIC/EPOXY
工艺AVALANCHE
结构SINGLE
二极管元件材料SILICON
极性UNIDIRECTIONAL
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
关闭电压33 V
最大非重复峰值转速功率5000 W

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Surface Mount Transient Voltage Suppressors (TVS)
5.0SMDJ Series
Description
The 5.0SMDJ series is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other transient
voltage events.
11 To 440 V
5000W
Uni-directional
Bi-directional
Features
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
u
For surface mounted applications in order to optimize board space
Low leakage
Uni and Bidirectional unit
Glass passivated junction
Low inductance
Excellent clamping capability
5000W Peak power capability at 10
×
1000µs waveform Repetition
rate (duty cycle):0.01%
Fast response time: typically less than 1.0ps from 0 Volts to V
BR
min
Typical I
R
less than 5μA above 25V.
High Temperature soldering: 260°C/40 seconds at terminals
Typical maximum temperature coefficient
ΔV
BR
= 0.1%
×
V
BR
@25°C×
ΔT
Plastic package has Underwriters Laboratory Flammability 94V-0
Matte tin lead–free Plated
Halogen free and RoHS compliant
Typical failure mode is short from over-specified voltage or current
Whisker test is conducted based on JEDEC JESD201A per its table
4a and 4c
IEC-61000-4-2 ESD 15kV(Air), 8kV (Contact)
ESD protection of data lines in accordance with IEC 61000-4-2
(IEC801-2)
EFT protection of data lines in accordance with IEC 61000-4-4
(IEC801-4)
Functional Diagram
Bi-directional
Cathode
Uni-direction
Anode
Applications
TVS devices are ideal for the protection of I/O interfaces, V
CC
bus and other vulnerable circuits used in Telecom, Computer,
Industrial and Consumer electronic applications.
Maximum Ratings
(T
A
=25℃ unless otherwise noted)
Parameter
Symbol
P
PPM
I
PP
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Value
5000
See Next Table
6.5
300
3.5/5.0
-55 to +150
Unit
Watts
Amps
Watt
Amps
Voltage
°C
Peak Pulse Power Dissipation with a 10/1000µs waveform (Fig.1)(Note
1), (Note 2)
Peak Pulse Current with a 10/1000µs waveform.(Note1,Fig.3)
Power Dissipation on Infinite Heat Sink at T
L
=75°C
Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward Voltage at 25A for Unidirectional Only
(Note 4)
Operating junction and Storage Temperature Range.
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2.
2. Mounted on 5.0mm x 5.0mm (0.03mm thick) Copper Pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle = 4 pulses per minutes maximum.
4. V
F
< 3.5V for V
BR
< 200V and V
F
< 6.5V for V
BR
> 201V.
Electrical Characteristics (T
A
=25℃ unless otherwise noted)
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/7
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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