KM4132G112
CMOS SGRAM
32Mbit SGRAM
512K x 32bit x 2 Banks
Synchronous Graphic RAM
LVTTL
Revision 1.5
July 1999
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.5 (Jul. 1999)
KM4132G112
Revision History
Revision 1.5 (July 14th, 1999)
• Add KM4132G112-D(222MHz@CL3) .
CMOS SGRAM
Revision 1.4 (June 10th, 1999)
• AC values of tRCD/tRP/tRAS/tRC are returned to the number of clock cycles. Those can be also converted to ns unit
based values by multiplying the number of clock cycles and clock cycle time of each part together. Accordingly,
- Changed tRCD and tRP of KM4132G112-5/7/8 each from 18ns to 20ns/21ns/20ns
- Changed tRC of KM4132G112-7/8 each from 67ns/68ns to 70ns
- Changed tRC of KM4132G112-5 from 65ns(13CLK) to 60ns (12CLK)
- Changed tRC of KM4132G112-6 from 66ns(11CLK) to 60ns (10CLK)
• Add KM4132G112-C(183MHz@CL3) part .For -C part, tRDL=1CLK can be supported within restricted amounts and it will
be distingusihed by bucket code "NV"
Revision 1.3 (April 1999)
• Modified power-up sequence.
• Changed I
LI
and I
LO
from +/- 5uA to +/-10uA.
• Changed tSAC and tSHZ of KM4132G112-8@CL2 from 7ns to 6ns.
Revision 1.2 (March 1999)
• Removed KM4132G112-Z(125MHz@CL2) and KM4132G112-10.
• Changed tRDL of KM4132G112-7/8 from 1CLK to 2CLK. For -6/7/8, tRDL=1CLK product can be supported within
restricted amounts and it will be distingusihed by bucket code "NV"
Revision 1.1 (February 1999)
• Removed KM4132G112-7@CL2 (115MHz@CL2) part
• Changed VDD Condition of KM4132G112-8@CL2 from 3.135V~3.6V to 3.0V~3.6V.
• Changed AC characteristics table format.
Revision 1.0 (February 1999) : Final Spec.
• Changed AC Parameters based on next generation spec.
• Add KM4132G112-5/F5 and KM4132G112-Z/FZ products.
Revision 0.3 (January 1999) : Preliminary Spec.
Revision 0.2 (September 1998)
• Added the Low Power Products in all speed grade.
- KM4132G112-F*
• Changed the clock cycle time of KM4132G112 -7/F7 @ CL2 from 12ns to 8.7ns, accordingly, the AC and DC parameters
of KM4132G112 -7/F7 @ CL2 are changed in AC/DC CHARACTERISTICS.
• Changed the clock cycle time of KM4132G112 -8/F8 @ CL2 from 12ns to 10ns, accordingly, the AC and DC parameters
of KM4132G112 -8/F8 @ CL2 are changed in AC/DC CHARACTERISTICS.
• Added KM4132G112-10/F10 products.
• AC Operating Condition is changed as defined :
- VIH(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
- VIL(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
• Added DC Characteristics
- Estimated Current Data
Revision 0.1 (June 1998)
• Initial Industry Release.
-2-
Rev. 1.5 (Jul. 1999)
KM4132G112
512K x 32Bit x 2 Banks Synchronous Graphic RAM
FEATURES
•
•
•
•
3.3V power supply
LVTTL compatible with multiplexed address
Dual bank operation
MRS cycle with address key programs
-. CAS Latency (2, 3)
-. Burst Length (1, 2, 4, 8 & full page)
-. Burst Type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the
system clock
Burst Read Single-bit Write operation
DQM 0-3 for byte masking
Auto & self refresh
32ms refresh period (2K cycle)
100 Pin PQFP, TQFP (14 x 20 mm)
CMOS SGRAM
GENERAL DESCRIPTION
The KM4132G112 is 33,554,432 bits synchronous high data
rate Dynamic RAM organized as 2 x 524,288 words by 32 bits,
fabricated with SAMSUNG′s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length, and programmable latencies allows the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
Write per bit and 8 columns block write improves performance in
graphics systems.
•
•
•
•
•
•
ORDERING INFORMATION
Part NO.
KM4132G112Q-D/FD
KM4132G112Q-5/F5
KM4132G112Q-C/FC
KM4132G112Q-6/F6
KM4132G112Q-7/F7
KM4132G112Q-8/F8
KM4132G112TQ-D/FD
KM4132G112TQ-5/F5
KM4132G112TQ-C/FC
KM4132G112TQ-6/F6
KM4132G112TQ-7/F7
KM4132G112TQ-8/F8
Max Freq.
222MHz
200MHz
183MHz
166MHz
143MHz
125MHz
222MHz
200MHz
183MHz
166MHz
143MHz
125MHz
INPUT BUFFER
Interface
Package
Graphics Features
• SMRS cycle.
-. Load mask register
-. Load color register
• Write Per Bit(Old Mask)
• Block Write(8 Columns)
LVTTL
100 PQFP
LVTTL
100 TQFP
FUNCTIONAL BLOCK DIAGRAM
DQMi
BLOCK
WRITE
CONTROL
LOGIC
CLK
CKE
CS
MASK
WRITE
MASK
REGISTER
COLOR
REGISTER
CONTROL
LOGIC
MUX
•
COLUMN
MASK
DQMi
DQi
(i=0~31)
TIMING REGISTER
SENSE
AMPLIFIER
RAS
CAS
WE
DSF
DQMi
•
512Kx32
CELL
ARRAY
512Kx32
CELL
ARRAY
ROW DECORDER
BANK SELECTION
•
SERIAL
COUNTER
COLUMN ADDRESS
BUFFER
ROW ADDRESS
BUFFER
REFRESH
COUNTER
* Samsung Electronics reserves the right to
change products or specification without
CLOCK ADDRESS(A
0
~A
10
,BA)
notice.
ADDRESS REGISTER
OUTPUT BUFFER
LATENCY &
BURST LENGTH
PROGRAMING
REGISTER
COLUMN
DECORDER
-3-
Rev. 1.5 (Jul. 1999)
KM4132G112
PIN CONFIGURATION
(TOP VIEW)
DQ28
VDDQ
DQ27
DQ26
V
SSQ
DQ25
DQ24
V
DDQ
DQ15
DQ14
V
SSQ
DQ13
DQ12
V
DDQ
V
SS
V
DD
DQ11
DQ10
V
SSQ
DQ9
DQ8
V
DDQ
N.C
DQM3
DQM1
CLK
CKE
DSF
N.C
A
8
/AP
CMOS SGRAM
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
DQ29
V
SSQ
DQ30
DQ31
V
SS
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
V
DD
DQ0
DQ1
V
SSQ
DQ2
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
100 Pin QFP
Forward Type
20 x 14 mm
2
0.65mm pin Pitch
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
A
7
A
6
A
5
A
4
V
SS
A
10
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
V
DD
A
3
A
2
A
1
A
0
*PQFP (Height = 3.0mmMAX)
TQFP (Height = 1.2mmMAX)
PIN CONFIGURATION DESCRIPTION
PIN
CLK
CS
NAME
System Clock
Chip Select
INPUT FUNCTION
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQMi
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one clock + t
SS
prior to new command.
Disable input buffers for power down in standby.
Row / Column addresses are multiplexed on the same pins.
Row address : RA
0
~ RA
10
, Column address : CA
0
~ CA
7
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and Row precharge.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active.(Byte Masking)
Data inputs/outputs are multiplexed on the same pins.
Enables write per bit, block write and special mode register set.
Power Supply : +3.3V
±
0.3V/Ground
Provide isolated Power/Ground to DQs for improved noise immunity.
CKE
Clock Enable
A0 ~ A10
BA
RAS
CAS
WE
DQMi
DQi
DSF
V
DD
/V
SS
V
DDQ
/V
SSQ
N.C
Address
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
Data Input/Output Mask
Data Input/Output
Define Special Function
Power Supply /Ground
Data Output Power /Ground
No Connection
DQ3
V
DDQ
DQ4
DQ5
V
SSQ
DQ6
DQ7
V
DDQ
DQ16
DQ17
V
SSQ
DQ18
DQ19
V
DDQ
V
DD
V
SS
DQ20
DQ21
V
SSQ
DQ22
DQ23
V
DDQ
DQM0
DQM2
WE
CAS
RAS
CS
BA
A
9
-4-
Rev. 1.5 (Jul. 1999)
KM4132G112
ABSOLUTE MAXIMUM RATINGS
(Voltage referenced to V
SS
)
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0
~
4.6
-1.0
~
4.6
-55 ~ +150
1
50
CMOS SGRAM
Unit
V
V
°C
W
mA
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V)
Parameter
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Output Loading Condition
Symbol
V
DD
, V
DDQ
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
Min
3.0
2.0
-0.3
2.4
-
-10
-10
Typ
3.3
3.0
0
-
-
-
-
Max
3.6
V
DDQ
+0.3
0.8
-
0.4
10
10
see figure 1
Unit
V
V
V
V
V
uA
uA
Note
5
1
2
I
OH
= -2mA
I
OL
= 2mA
3
4
Note :
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V
≤
V
OUT
≤
V
DD.
5. The VDD condition of KM4132G112-D/5/C/6 is 3.135V~3.6V.
CAPACITANCE
(V
DD
/V
DDQ
= 3.3V, T
A
= 23°C, f = 1MHz)
Pin
Clock
Symbol
C
CLK
C
IN
C
ADD
C
OUT
Min
-
-
-
-
Max
4.0
4.0
4.0
5.0
Unit
pF
pF
pF
pF
RAS, CAS, WE, CS, CKE, DQM
i
,DSF
Address
DQ
i
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Decoupling Capacitance between V
DD
and V
SS
Decoupling Capacitance between V
DDQ
and V
SSQ
Symbol
C
DC1
C
DC2
Value
0.1 + 0.01
0.1 + 0.01
Unit
uF
uF
Note :
1. V
DD
and V
DDQ
pins are separated each other.
All V
DD
pins are connected in chip. All V
DDQ
pins are connected in chip.
2. V
SS
and V
SSQ
pins are separated each other
All V
SS
pins are connected in chip. All V
SSQ
pins are connected in chip.
-5-
Rev. 1.5 (Jul. 1999)
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