Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Central Semiconductor |
包装说明 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 0.6 A |
基于收集器的最大容量 | 8 pF |
集电极-发射极最大电压 | 60 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 100 |
JESD-30 代码 | R-PDSO-G3 |
JESD-609代码 | e3 |
湿度敏感等级 | 1 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 0.35 W |
认证状态 | Not Qualified |
表面贴装 | YES |
端子面层 | Matte Tin (Sn) |
端子形式 | GULL WING |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 10 |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 200 MHz |
最大关闭时间(toff) | 100 ns |
最大开启时间(吨) | 45 ns |
VCEsat-Max | 1.6 V |
CMPT2907ATRLEADFREE | CMPT2907ABKLEADFREE | CMPT2907ATR | CMPT2907ABK | CMPT2907ATR13 | CMPT2907ATR13LEADFREE | |
---|---|---|---|---|---|---|
描述 | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, |
是否无铅 | 不含铅 | 不含铅 | 含铅 | 含铅 | 含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 不符合 | 不符合 | 不符合 | 符合 |
Reach Compliance Code | compliant | compliant | not_compliant | not_compliant | not_compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A | 0.6 A |
基于收集器的最大容量 | 8 pF | 8 pF | 8 pF | 8 pF | 8 pF | 8 pF |
集电极-发射极最大电压 | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 100 | 100 | 100 | 100 | 100 | 100 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
JESD-609代码 | e3 | e3 | e0 | e0 | e0 | e3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 260 |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子面层 | Matte Tin (Sn) | MATTE TIN (315) | Tin/Lead (Sn/Pb) | TIN LEAD | TIN LEAD | Matte Tin (Sn) |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
处于峰值回流温度下的最长时间 | 10 | 10 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 10 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
最大关闭时间(toff) | 100 ns | 100 ns | 100 ns | 100 ns | 100 ns | 100 ns |
最大开启时间(吨) | 45 ns | 45 ns | 45 ns | 45 ns | 45 ns | 45 ns |
VCEsat-Max | 1.6 V | 1.6 V | 1.6 V | 1.6 V | 1.6 V | 1.6 V |
厂商名称 | Central Semiconductor | - | Central Semiconductor | Central Semiconductor | Central Semiconductor | Central Semiconductor |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | - | - | SMALL OUTLINE, R-PDSO-G3 |
最大功率耗散 (Abs) | 0.35 W | 0.35 W | 0.35 W | 0.35 W | - | - |
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