Datasheet> 器件分类 > 存储> 存储> 5962R1020304QXC

文档预览

5962R1020304QXC: 产品描述Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132; 产品类别存储存储; 文件大小257KB，共27页; 制造商Cobham PLC

下载文档详细参数选型对比全文预览

5962R1020304QXC概述

Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132

5962R1020304QXC规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Cobham PLC
包装说明	QFP, TPAK132,1.8SQ,25
Reach Compliance Code	unknown
最长访问时间	20 ns
其他特性	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY
I/O 类型	COMMON
JESD-30 代码	S-CQFP-G132
JESD-609代码	e4
长度	22.86 mm
内存密度	134217728 bit
内存集成电路类型	SRAM MODULE
内存宽度	32
功能数量	1
端子数量	132
字数	4194304 words
字数代码	4000000
工作模式	ASYNCHRONOUS
最高工作温度	105 °C
最低工作温度	-55 °C
组织	4MX32
输出特性	3-STATE
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装代码	QFP
封装等效代码	TPAK132,1.8SQ,25
封装形状	SQUARE
封装形式	FLATPACK
并行/串行	PARALLEL
电源	1.8,2.5/3.3 V
认证状态	Qualified
筛选级别	MIL-PRF-38535 Class Q
座面最大高度	7.87 mm
最大待机电流	0.035 A
最小待机电流	1.7 V
最大压摆率	0.225 mA
最大供电电压 (Vsup)	2 V
最小供电电压 (Vsup)	1.7 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子面层	GOLD
端子形式	GULL WING
端子节距	0.635 mm
端子位置	QUAD
总剂量	100k Rad(Si) V
宽度	22.86 mm

文档预览

下载PDF文档

全文
预览

Standard Products

UT8ER1M32 32Megabit SRAM MCM

UT8ER2M32 64Megabit SRAM MCM

UT8ER4M32 128Megabit SRAM MCM

Data Sheet

June 2015

The most important thing we build is trust

FEATURES



20ns Read, 10ns Write maximum access times available



Functionally compatible with traditional 1M, 2M and 4M

x 32 SRAM devices



CMOS compatible input and output levels, three-state

bidirectional data bus

- I/O Voltages 2.3V to 3.6V, 1.7V to 2.0Vcore



Available densities:

- UT8ER1M32: 33, 554, 432 bits

- UT8ER2M32: 67, 108, 864 bits

- UT8ER4M32: 134, 217, 728 bits



Operational environment:

- Total-dose: 100 krad(Si)

- SEL Immune: <110 MeV-cm

/mg

- SEU error rate = 8.1 x10

-16

errors/bit-day assuming

geosynchronous orbit, Adam’s 90% worst environment,

and 6600ns default Scrub Rate Period (=97% SRAM

availability)



Packaging option:

- 132-lead side-brazed dual cavity ceramic quad flatpack



Standard Microelectronics Drawing:

- UT8ER1M32: 5962-10202

- QML Q, Q+ and Vcompliant

- UT8ER2M32: 5962-10203

- QML Q, Q+, and Vcompliant

- UT8ER4M32: 5962-10204

- QML Q and Q+ compliant

INTRODUCTION

The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high

performance CMOS static RAM multichip modules (MCMs)

organized as two, four or eight individual 524,288 words x 32

bits dice respectively. Easy memory expansion is provided by

active LOW chip enables (En), an active LOW output enable

(G), and three-state drivers. This device has a power-down

feature that reduces power consumption by more than 90% when

deselected. Autonomous (master) and demanded (slave)

scrubbing continues while deselected.

Writing to the device is accomplished by driving one of the chip

enable (En) inputs LOW and the write enable (W) input LOW.

Data on the 32 I/O pins (DQ0 through DQ31) is then written into

the location specified on the address pins (A0 through A18).

Reading from the device is accomplished by driving one of the

chip enables (En) and output enable (G) LOW while driving

write enable (W) HIGH. Under these conditions, the contents of

the memory location specified by the address pins will appear

on the I/O pins.

Note:

Only on En pin may be active at any time.

The 32 input/output pins (DQ0 through DQ31) are placed in a

high impedance state when the device is deselected (En HIGH),

the outputs are disabled (G HIGH), or during a write operation

(En LOW, W LOW).

36-00-01-009

Version 1.0.0

-1-

Cobham Semiconductor Solutions

Aeroflex.com/Memories

5962R1020304QXC相似产品对比

	5962R1020304QXC	5962R1020301QXC	5962R1020301VXC	5962R1020404QXC	UT8ER2M32M-22XPC	5962R1020403QXC	5962R1020401QXC	UT8ER2M32S-22XPC	UT8ER2M32S-22XFC	UT8ER2M32M-22XFC
描述	Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 2MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 2MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	Multi-Port SRAM Module, 4MX32, 20ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132	SRAM Module, 2MX32, 22ns, CMOS, CQFP132, 0.900 INCH, CERAMIC, SIDE BRAZED, QFP-132
包装说明	QFP, TPAK132,1.8SQ,25	QFP, TPAK132,1.8SQ,25	QFP, TPAK132,1.8SQ,25	QFP, TPAK132,1.8SQ,25	QFP,	QFP, TPAK132,1.8SQ,25	QFP, TPAK132,1.8SQ,25	QFP,	QFP,	QFP,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
最长访问时间	20 ns	20 ns	20 ns	20 ns	22 ns	20 ns	20 ns	22 ns	22 ns	22 ns
JESD-30 代码	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132	S-CQFP-G132
JESD-609代码	e4	e4	e4	e4	e4	e4	e4	e4	e4	e4
长度	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm
内存密度	134217728 bit	67108864 bit	67108864 bit	134217728 bit	67108864 bit	134217728 bit	134217728 bit	67108864 bit	67108864 bit	67108864 bit
内存集成电路类型	SRAM MODULE	SRAM MODULE	MULTI-PORT SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
内存宽度	32	32	32	32	32	32	32	32	32	32
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	132	132	132	132	132	132	132	132	132	132
字数	4194304 words	2097152 words	2097152 words	4194304 words	2097152 words	4194304 words	4194304 words	2097152 words	2097152 words	2097152 words
字数代码	4000000	2000000	2000000	4000000	2000000	4000000	4000000	2000000	2000000	2000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
组织	4MX32	2MX32	2MX32	4MX32	2MX32	4MX32	4MX32	2MX32	2MX32	2MX32
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装代码	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Qualified	Qualified	Qualified	Qualified	Not Qualified	Qualified	Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm	7.87 mm
最大供电电压 (Vsup)	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子面层	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD	GOLD
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
宽度	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm	22.86 mm
是否Rohs认证	不符合	不符合	不符合	不符合	-	不符合	不符合	-	-	-
厂商名称	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC	-	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC	Cobham PLC
其他特性	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	-	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	ALSO OPERATES WITH 2.3V TO 3.6V SUPPLY	-	-	-
I/O 类型	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON	-	-	-
最高工作温度	105 °C	105 °C	105 °C	105 °C	-	105 °C	105 °C	-	105 °C	105 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-	-55 °C	-55 °C	-	-55 °C	-55 °C
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE	-	-	-
封装等效代码	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	-	TPAK132,1.8SQ,25	TPAK132,1.8SQ,25	-	-	-
电源	1.8,2.5/3.3 V	1.8,2.5/3.3 V	1.8,2.5/3.3 V	1.8,2.5/3.3 V	-	1.8,2.5/3.3 V	1.8,2.5/3.3 V	-	-	-
筛选级别	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class V	MIL-PRF-38535 Class Q	-	MIL-PRF-38535 Class Q	MIL-PRF-38535 Class Q	-	-	-
最大待机电流	0.035 A	0.035 A	0.035 A	0.035 A	-	0.035 A	0.035 A	-	-	-
最小待机电流	1.7 V	1.7 V	1.7 V	1.7 V	-	1.7 V	1.7 V	-	-	-
最大压摆率	0.225 mA	0.225 mA	0.225 mA	0.225 mA	-	0.225 mA	0.225 mA	-	-	-
温度等级	OTHER	OTHER	OTHER	OTHER	-	OTHER	OTHER	-	OTHER	OTHER
总剂量	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	-	100k Rad(Si) V	100k Rad(Si) V	-	-	-

5962R1020304QXC

5962R1020304QXC概述

5962R1020304QXC规格参数

文档预览

5962R1020304QXC相似产品对比

推荐资源