SUM40N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
20
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.017 @ V
GS
= 4.5 V
I
D
(A)
a
40
a
40
a
D
TrenchFETr Power MOSFET
D
175_C Junction Temperature
D
100% R
g
Tested
APPLICATIONS
D
Desktop or Server CPU Core
D
Game Station
D
TO-263
G
DRAIN connected to TAB
G
D S
S
Ordering Information: SUM40N02-09P
SUM40N02-09P-E3 (Lead Free)
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
T
C
= 25_C
T
A
= 25_C
d
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
Limit
20
"20
40
a
40
a
100
93
c
3.75
−55
to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
d
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72110
S-32523—Rev. C, 08-Dec-03
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
1.6
Unit
_C/W
1
SUM40N02-09P
Vishay Siliconix
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 20 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 20 V, V
GS
= 0 V, T
J
= 175_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State
Drain Source On State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175_C
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 20 A
15
0.0135
100
0.008
0.0095
0.014
0.016
0.017
S
W
20
0.85
3
"100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
b
Gate-Source Charge
b
Gate-Drain Charge
b
Gate Resistance
Turn-On Delay Time
b
Rise Time
b
Turn-Off Delay Time
b
Fall Time
b
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 0.25
W
I
D
^
40 A, V
GEN
= 10 V, R
g
= 2.5
W
2
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 40 A
,
,
V
GS
= 0 V, V
DS
= 10 V, f = 1 MHz
1300
470
275
10.5
4.2
4.0
4.0
8
10
25
12
6.8
12
15
40
20
ns
W
16
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM
Q
rr
I
F
= 40 A, di/dt = 100 A/ms
m
I
F
= 40 A, V
GS
= 0 V
1.1
25
0.7
0.009
40
100
1.5
40
1.1
0.022
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Independent of operating temperature.
c. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72110
S-32523—Rev. C, 08-Dec-03
SUM40N02-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
100
Output Characteristics
100
V
GS
= 10 thru 6 V
5V
80
I
D
−
Drain Current (A)
Transfer Characteristics
T
C
=
−55_C
80
I
D
−
Drain Current (A)
25_C
60
125_C
40
60
4V
40
20
3V
20
0
0
2
4
6
8
10
0
0
1
2
3
4
5
6
V
GS
−
Gate-to-Source Voltage (V)
V
DS
−
Drain-to-Source Voltage (V)
Transconductance
60
T
C
=
−55_C
r
DS(on)
−
On-Resistance (
W
)
50
g
fs
−
Transconductance (S)
40
30
20
10
0
0
10
20
30
40
50
25_C
125_C
0.025
0.020
0.030
On-Resistance vs. Drain Current
V
GS
= 4.5 V
0.015
0.010
0.005
0.000
0
20
40
60
80
100
V
GS
= 10 V
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
2000
Capacitance
10
V
DS
= 10 V
I
D
= 40 A
Gate Charge
1600
C
−
Capacitance (pF)
C
iss
1200
V
GS
−
Gate-to-Source Voltage (V)
8
6
800
C
oss
400
C
rss
0
0
4
8
12
16
20
V
DS
−
Drain-to-Source Voltage (V)
4
2
0
0
4
8
12
16
20
Q
g
−
Total Gate Charge (nC)
www.vishay.com
Document Number: 72110
S-32523—Rev. C, 08-Dec-03
3
SUM40N02-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 20 A
100
Source-Drain Diode Forward Voltage
r
DS(on)
−
On-Resistance (
W)
(Normalized)
I
S
−
Source Current (A)
1.4
T
J
= 150_C
10
T
J
= 25_C
1.2
1.0
0.8
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
−
Junction Temperature (_C)
V
SD
−
Source-to-Drain Voltage (V)
30
Drain Source Breakdown vs.
Junction Temperature
28
V
(BR)DSS
(V)
I
D
= 250
mA
26
24
22
20
−50
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
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4
Document Number: 72110
S-32523—Rev. C, 08-Dec-03
SUM40N02-09P
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
50
1000
Limited
by r
DS(on)
10, 100
ms
Safe Operating Area
40
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
100
30
10
1 ms
10 ms
dc, 100 ms
20
10
1
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
T
C
−
Ambient Temperature (_C)
0.1
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
Single Pulse
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
10
−4
10
−3
10
−2
10
−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72110
S-32523—Rev. C, 08-Dec-03
www.vishay.com
5
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