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Datasheet> 器件分类 > 无线/射频/通信> 射频和微波> SGA-9189
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SGA-9189

产品描述Wide Band Medium Power Amplifier, 50MHz Min, 3000MHz Max, SOT-89, 3 PIN
产品类别无线/射频/通信    射频和微波   
文件大小187KB，共6页
制造商Qorvo
官网地址https://www.qorvo.com
下载文档 详细参数 选型对比 全文预览

SGA-9189概述

Wide Band Medium Power Amplifier, 50MHz Min, 3000MHz Max, SOT-89, 3 PIN

SGA-9189规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Qorvo
Reach Compliance Codeunknown
特性阻抗50 Ω
构造COMPONENT
增益11.2 dB
JESD-609代码e0
最大工作频率3000 MHz
最小工作频率50 MHz
最高工作温度85 °C
最低工作温度-40 °C
射频/微波设备类型WIDE BAND MEDIUM POWER
端子面层Tin/Lead (Sn/Pb)

SGA-9189文档预览

SGA-9189(Z)
Medium Power
Discrete SiGe
Transistor
SGA-9189(Z)
MEDIUM POWER DISCRETE SiGe TRANSISTOR
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: SOT-89
Product Description
RFMD’s SGA-9189 is a high performance transistor designed for operation to
3GHz. With optimal matching at 2GHz, OIP
3
=39dBm, and P
1dB
=25.5dBm. This RF
device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe
HBT) process. The SGA-9189 is cost-effective for applications requiring high linear-
ity even at moderate biasing levels. It is well suited for operation at both 5V and 3V.
The matte tin finish on the lead-free package utilizes a post annealing process to
mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95.
This package is also manufactured with green molding compounds that contain no
antimony trioxide nor halogenated fire retardants.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Gmax (dB)
Features
Available in RoHS Compliant and
Green Packaging
50MHz to 3000MHz Operation
39dBm Output IP
3
Typ. at
1.96GHz
12.2dB Gain Typ. at 1.96GHz
25.5dBm P
1dB
Typ. at 1.96GHz
2.1dB NF Typ. at 0.9GHz
Typical Gmax, OIP3, P1dB @ 5V,180mA
Cost-Effective
44
42
40
38
36
34
32
30
28
26
24
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
25
23
21
19
17
15
13
11
9
7
5
3V to 5V Operation
OIP3, P1dB (dBm)
OIP3
Applications
Wireless Infrastructure Driver
Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 Contains Detailed Appli-
cation Circuits
Gmax
P1dB
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
Parameter
Maximum Available Gain
Power Gain
Output Power at 1dB Compression
Min.
17.5
11.2
23.5
Specification
Typ.
20.5
13.2
19.0
12.2
40
25.5
40.0
Max.
20.5
13.2
Unit
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
dB
V
°C/W
V
mA
Condition
900MHz, Z
S
=Z
S
*, Z
L
=Z
L
*
1960MHz
900MHz [1], Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT,
P
OUT
=+10dBm per
tone
1960MHz [2]
900MHz, Z
S
=Z
SOPT
, Z
L
=Z
LOPT
1960MHz
collector - emitter
junction - lead
collector - emitter
Output Third Order Intercept Point
36.5
39.0
Noise Figure
2.1
2.6
DC Current Gain
100
180
300
Breakdown Voltage
7.5
8.5
Thermal Resistance
47
Device Operating Voltage
5.5
Operating Current
155
180
195
Test Conditions: V
CE
=5V, I
CQ
=180mA (unless otherwise noted), T
L
=25°C.
[1] 100% Tested [2] Sample Tested
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
EDS-101497 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6
SGA-9189(Z)
Absolute Maximum Ratings
Parameter
Max Base Current (IB)
Max Device Current (ICE)
Max Collector-Emitter Voltage (VCEO)
Max Collector-Base Voltage (VCBO)
Max Emitter-Base Voltage (VEBO)
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
Rating
5
200
7
20
4.8
+150
See Graph
+150
Unit
mA
mA
V
V
V
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
*Note: Load condition1, Z
L
=50Ω.
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l and T
L
=T
LEAD
Typical Performance with Engineering Application Circuit
Freq
(MHz)
945
1960
2140
2440
1
VCE
(V)
5
5
5
5
ICQ
(mA)
184
179
180
180
P1dB
(dBm)
25.8
25.5
25.4
25.4
OIP3
1
(dBm)
39.5
40.0
39.0
40.0
Gain
(dB)
18.8
12.2
11.3
10.2
S11
(dB)
-14
-23
-20
-20
S22
(dB)
-26
-21
-14
-17
NF
(dB)
2.1
2.4
2.6
2.7
ZSOPT
(Ω)
6.8 -j0.85
7.6 - j11.2
18.1 + j3.4
5.6 - j15.1
ZSOPT
(Ω)
16 + j5.9
22.8 + j0.7
23.8 - j9.0
23.1 - j2.7
P
OUT
=+10dBm per tone for V
CE
=5V, 1MHz tone spacing
Typical Performance with Engineering Application Circuit
Freq
(MHz)
945
1960
2440
2
P
OUT
=+6dBm
VCE
(V)
3
3
3
ICQ
(mA)
165
162
165
P1dB
(dBm)
22.1
22.4
23.2
OIP3
2
(dBm)
34.3
35.0
35.3
Gain
(dB)
17.7
11.8
9.9
S11
(dB)
-18
-18
-20
S22
(dB)
-11
-16
-15
NF
(dB)
2.1
2.2
2.6
ZSOPT
(Ω)
9.6 - j1.6
7.8 - j13.1
8.1 - j16.0
ZSOPT
(Ω)
11.0 + j1.4
19.3 - j2.9
21.0 - j6.5
per tone for V
CE
=3V, 1MHz tone spacing
Data above represents typical performance of the application circuits notes in Application Note AN-021. Refer to the applica-
tion note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing
instructions and other key issues to be considered. For the latest application notes please visit our site at wwww.RFMD.com or
call your local sales representative.
Maximum Recommended Operational
Dissipated Power
1.20
Total Dissipated Power (W)
C
1.00
0.80
0.60
0.40
0.20
0.00
-40
-10
20
50
80
110
140
Lead Temperature (C)
Operational Limit (Tj<130C)
B
Z
LOPT
Z
SOPT
E
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-101497 Rev I
SGA-9189(Z)
De-embedded S-Parameters (Z
S
=Z
L
=50 Ohms, V
CE
=5V, I
CQ
=185mA, 25
°
C)
45
35
Insertion Gain & Isolation
5
-5
25
15
5
Gain
Isolation
-15
-25
Gain vs. Temp (dB)
Gain (dB)
30
25
20
15
10
5
0
Insertion Gain vs Temperature
Isolation (dB)
T = -40, 25, 85°C
Gmax
-35
-45
-5
0
1
2
3
4
5
6
7
8
-5
-10
0
1
2
3
4
5
6
7
8
Frequency (GHz)
S11 vs Frequency
1.0
0.5
Frequency (GHz)
S22 vs Frequency
1.0
2.0
0.5
2.0
4 GHz
5 GHz
3 GHz
4 GHz
3 GHz
5.0
0.2
5 GHz
0.2
2 GHz
8 GHz
1 GHz
5.0
2 GHz
8 GHz
1 GHz
0.0
0.2
0.5
1.0
2.0
5.0
inf
0.0
0.2
0.5
1.0
2.0
5.0
inf
S11
0.2
5.0
0.2
5.0
50 MHz
S22
50 MHz
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z
S
=Z
L
=50Ω. The data represents typical performace of the device.
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
400
350
300
DC-IV Curves
I
b
= 0.4 - 3.6 mA , 0.4 mA steps
T=25C
I
C
(mA)
250
200
150
100
50
0
0
2
4
6
8
V
CE
(V)
EDS-101497 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 6
SGA-9189(Z)
Pin
1
2
3
4
Function
Base
Emitter
Collector
Emitter
Description
RF input.
Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible.
RF output.
Same as pin 2.
Recommended Mounting Configuration for Optimum RF and Thermal
Performance
Ground Plane
Plated Thru
Holes
(0.020" DIA)
SOT-89
Package
Machine
Screws
Mounting and Thermal Considerations
It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items
should be implemented to maximize MTTF and RF performance.
1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL]
2. Incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [CRITICAL]
3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as
close to the ground tab (pin 4) as possible. [RECOMMENDED]
4. Use 2 ounce copper to improve the PCB’s heat spreading capability. [RECOMMENDED]
4 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
EDS-101497 Rev I
SGA-9189(Z)
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
.161
3
.177 .068
P1
.096
.016
.019 .118
4
1
2
.041
.059
.015
Part Symbolization
The part will be symbolized with the “P1” (“P1Z” for RoHS version) designator and a dot signifying pin 1 on the top surface of
the package. Alternate marking “SGA9189Z” or “SGA9189” on line one with Trace Code on line two.
Ordering Information
Part Number
SGA-9189
SGA-9189Z
Reel Size
13”
13”
Devices/Reel
3000
3000
EDS-101497 Rev I
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 6
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SGA-9189相似产品对比

SGA-9189
描述 Wide Band Medium Power Amplifier, 50MHz Min, 3000MHz Max, SOT-89, 3 PIN
是否Rohs认证 不符合
厂商名称 Qorvo
Reach Compliance Code unknown
特性阻抗 50 Ω
构造 COMPONENT
增益 11.2 dB
JESD-609代码 e0
最大工作频率 3000 MHz
最小工作频率 50 MHz
最高工作温度 85 °C
最低工作温度 -40 °C
射频/微波设备类型 WIDE BAND MEDIUM POWER
端子面层 Tin/Lead (Sn/Pb)

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器件捷径:   L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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