TRANSISTOR POWER, FET, FET General Purpose Power
参数名称 | 属性值 |
厂商名称 | Vishay(威世) |
包装说明 | , |
Reach Compliance Code | unknown |
配置 | Single |
最大漏极电流 (Abs) (ID) | 9 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最高工作温度 | 150 °C |
极性/信道类型 | N-CHANNEL |
最大功率耗散 (Abs) | 74 W |
表面贴装 | YES |
SIHF630S-GE3 | SIHF630STR-E3 | SIHF630STRL-GE3 | SIHF630STRR-GE3 | SIHF630STL-E3 | SIHF630S-E3 | |
---|---|---|---|---|---|---|
描述 | TRANSISTOR POWER, FET, FET General Purpose Power | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose Power | TRANSISTOR POWER, FET, FET General Purpose Power | TRANSISTOR POWER, FET, FET General Purpose Power | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose Power | TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, SMD-220, 3 PIN, FET General Purpose Power |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
配置 | Single | SINGLE WITH BUILT-IN DIODE | Single | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最大漏极电流 (Abs) (ID) | 9 A | 9 A | 9 A | 9 A | 9 A | 9 A |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
最大功率耗散 (Abs) | 74 W | 74 W | 74 W | 74 W | 74 W | 74 W |
表面贴装 | YES | YES | YES | YES | YES | YES |
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