HGTG12N60A4D, HGTP12N60A4D,
HGT1S12N60A4DS
Data Sheet
December 2001
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
IGBT used is the development type TA49335. The diode
used in anti-parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49337.
Features
• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A
• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
• Low Conduction Loss
•
Temperature Compensating
SABER™ Model
www.fairchildsermi.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
COLLECTOR
(FLANGE)
Ordering Information
PART NUMBER
HGTG12N60A4D
HGTP12N60A4D
HGT1S12N60A4DS
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
12N60A4D
12N60A4D
12N60A4D
E
G
C
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
JEDEC TO-263AB
Symbol
C
G
E
COLLECTOR
(FLANGE)
JEDEC STYLE TO-247
G
E
C
G
E
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
54
23
96
±20
±30
60A at 600V
167
1.33
-55 to 150
300
260
W
W/
o
C
o
C
o
C
o
C
UNITS
V
A
A
A
V
V
600
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 12A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 10Ω,
L = 500µH,
Test Circuit (Figure 24)
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
V
CE
= 600V
I
C
= 12A,
V
GE
= 15V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
-
-
-
-
-
-
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
2.0
1.6
5.6
-
-
8
78
97
17
8
96
18
55
160
50
17
16
110
70
55
250
175
MAX
-
250
2.0
2.7
2.0
-
±250
-
-
96
120
-
-
-
-
-
-
-
-
-
170
95
-
350
285
UNITS
V
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V,
L = 100µH, V
CE
= 600V
I
C
= 12A, V
CE
= 300V
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 12A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 10Ω,
L = 500µH,
Test Circuit (Figure 24)
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Electrical Specifications
PARAMETER
Diode Forward Voltage
Diode Reverse Recovery Time
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
V
EC
t
rr
R
θJC
TEST CONDITIONS
I
EC
= 12A
I
EC
= 12A, dI
EC
/dt = 200A/µs
I
EC
= 1A, dI
EC
/dt = 200A/µs
Thermal Resistance Junction To Case
IGBT
Diode
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
MIN
-
-
-
-
-
TYP
2.2
30
18
-
-
MAX
-
-
-
0.75
2.0
UNITS
V
ns
ns
o
C/W
o
C/W
Typical Performance Curves
60
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
70
60
50
40
30
20
10
0
0
V
GE
= 15V,
50
40
30
20
10
0
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 200µH
25
50
75
100
125
150
100
200
300
400
500
600
700
T
C
, CASE TEMPERATURE (
o
C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
20
18
16
14
12
10
8
6
4
2
0
9
f
MAX
, OPERATING FREQUENCY (kHz)
300
T
C
75
o
C
V
GE
15V
V
CE
= 390V, R
G
= 10Ω, T
J
= 125
o
C
300
275
250
I
SC
225
200
175
150
t
SC
125
100
75
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.75
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 10Ω, L = 500µH, V
CE
= 390V
10
1
3
10
20
30
10
11
12
13
14
15
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
500
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
20
16
T
J
= 150
o
C
12
T
J
= 125
o
C
8
4
0
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
20
16
12
8
4
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
0
0.5
1.0
1.5
2
2.5
0
0
0.5
1.0
1.5
2
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
E
ON2
, TURN-ON ENERGY LOSS (µJ)
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
600
500
400
300
200
100
0
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
400
R
G
= 10Ω, L = 500µH, V
CE
= 390V
350
300
250
200
150
100
50
0
2
4
6
8
10
12
T
J
= 25
o
C, V
GE
= 12V OR 15V
14
16
18
20
22
24
T
J
= 125
o
C, V
GE
= 12V OR 15V
2
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
18
t
d(ON)I
, TURN-ON DELAY TIME (ns)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
17
16
t
rI
, RISE TIME (ns)
15
14
13
12
11
10
2
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
32
28
24
20
16
12
8
4
0
2
R
G
= 10Ω, L = 500µH, V
CE
= 390V
T
J
= 125
o
C OR T
J
= 25
o
C, V
GE
= 12V
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
Typical Performance Curves
115
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
110
105
100
95
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
90
85
t
fI
, FALL TIME (ns)
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
80
70
60
50
40
30
20
10
2
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2
4
6
8
10
12
14
16
18
20
22
24
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
Unless Otherwise Specified
(Continued)
90
R
G
= 10Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
250
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
16
14
12
10
8
6
4
2
0
0
I
G(REF)
= 1mA, R
L
= 25Ω, T
C
= 25
o
C
200
V
CE
= 600V
150
V
CE
= 400V
100
V
CE
= 200V
50
0
6
7
8
9
10
11
12
13
14
15
16
10
20
30
40
50
60
70
80
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
1.2
1.0
E
TOTAL
, TOTAL SWITCHING
ENERGY LOSS (mJ)
0.8
R
G
= 10Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
10
I
CE
= 24A
0.6
0.4
I
CE
= 12A
0.2
I
CE
= 6A
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
E
TOTAL
, TOTAL SWITCHING
ENERGY LOSS (mJ)
T
J
= 125
o
C, L = 500µH,
V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 24A
1
I
CE
= 12A
I
CE
= 6A
0.1
5
10
100
R
G
, GATE RESISTANCE (Ω)
1000
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
©2001 Fairchild Semiconductor Corporation
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. B
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