Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . T
PKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
T
J
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= 10mA, V
GE
= 0V
V
CE
= 600V
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= 125
o
C
MIN
600
10
-
-
-
-
-
-
60
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
2.0
1.6
5.6
-
-
8
78
97
17
8
96
18
55
160
50
MAX
-
-
250
2.0
2.7
2.0
-
±250
-
-
96
120
-
-
-
-
-
-
-
UNITS
V
V
µA
mA
V
V
V
nA
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
V
CE(SAT)
I
C
= 12A,
V
GE
= 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
GE(TH)
I
GES
SSOA
V
GEP
Q
g(ON)
I
C
= 250µA, V
CE
= 600V
V
GE
=
±20V
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V
L = 100µH, V
CE
= 600V
I
C
= 12A, V
CE
= 300V
I
C
= 12A,
V
CE
= 300V
V
GE
= 15V
V
GE
= 20V
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
IGBT and Diode at T
J
= 25
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
=15V
R
G
= 10Ω
L = 500µH
Test Circuit - (Figure 20)
2
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4SPD
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
Thermal Resistance Junction To Case
NOTES:
2. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 20.
T
J
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON1
E
ON2
E
OFF
R
θJC
TEST CONDITIONS
IGBT and Diode at T
J
= 125
o
C
I
CE
= 12A
V
CE
= 390V
V
GE
= 15V
R
G
= 10Ω
L = 500µH
Test Circuit - (Figure 20)
MIN
-
-
-
-
-
-
-
-
TYP
17
16
110
70
55
250
175
-
MAX
-
-
170
95
-
350
285
0.75
UNITS
ns
ns
ns
ns
µJ
µJ
µJ
o
C/W
Typical Performance Curves
60
I
CE
, DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
V
GE
= 15V
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
T
J
= 150
o
C, R
G
= 10Ω, V
GE
= 15V, L = 200µH
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
500
f
MAX
, OPERATING FREQUENCY (kHz)
300
T
C
75
o
C
V
GE
15V
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
20
18
16
14
12
10
8
6
4
2
0
9
V
CE
= 390V, R
G
= 10Ω, T
J
= 125
o
C
300
275
250
I
SC
225
200
175
150
t
SC
125
100
75
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
ØJC
= 0.75
o
C/W, SEE NOTES
T
J
= 125
o
C, R
G
= 10Ω, L = 500µH, V
CE
= 390V
10
1
3
10
20
30
10
11
12
13
14
15
50
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
DUTY CYCLE < 0.5%, V
GE
= 12V
PULSE DURATION = 250µs
20
16
T
J
= 150
o
C
12
T
J
= 125
o
C
8
T
J
= 25
o
C
4
0
Unless Otherwise Specified
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
20
16
12
8
4
0
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 25
o
C
0
1.5
2
0.5
1.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
2.5
0
0.5
1.0
1.5
2
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
700
E
ON2
, TURN-ON ENERGY LOSS (µJ)
600
500
400
300
200
100
0
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
R
G
= 10Ω, L = 500µH, V
CE
= 390V
400
R
G
= 10Ω, L = 500µH, V
CE
= 390V
350
300
250
200
150
100
50
0
2
4
6
8
10
12
T
J
= 25
o
C, V
GE
= 12V OR 15V
14
16
18
20
22
24
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
2
4
6
8
10 12 14 16 18 20 22
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs
COLLECTOR TO EMITTER CURRENT
18
t
d(ON)I
, TURN-ON DELAY TIME (ns)
17
R
G
= 10Ω, L = 500µH, V
CE
= 390V
32
R
G
= 10Ω, L = 500µH, V
CE
= 390V
28
t
rI
, RISE TIME (ns)
24
20
16
12
8
T
J
= 25
o
C OR T
J
= 125
o
C, V
GE
= 15V
T
J
= 125
o
C, OR T
J
= 25
o
C, V
GE
= 12V
16
15
14
13
12
11
10
2
4
6
8
10
12
14
16
18
20
22
24
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 12V
4
0
2
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
4
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S
Typical Performance Curves
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
115
R
G
= 10Ω, L = 500µH, V
CE
= 390V
110
105
100
95
V
GE
= 12V, V
GE
= 15V, T
J
= 25
o
C
90
20
85
2
4
6
8
10
12
14
16
18
20
22
24
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
2
4
6
8
10
12
14
16
18
20
22
24
t
fI
, FALL TIME (ns)
V
GE
= 12V, V
GE
= 15V, T
J
= 125
o
C
80
70
60
50
40
30
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
Unless Otherwise Specified
(Continued)
90
R
G
= 10Ω, L = 500µH, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
250
V
GE
, GATE TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
CE
= 10V
PULSE DURATION = 250µs
200
T
J
= 25
o
C
T
J
= -55
o
C
T
J
= 125
o
C
100
16
14
12
10
8
6
4
2
0
0
I
G(REF)
= 1mA, R
L
= 25Ω, T
C
= 25
o
C
V
CE
= 600V
V
CE
= 400V
150
V
CE
= 200V
50
0
6
7
8
11
14
9
10
12
13
V
GE
, GATE TO EMITTER VOLTAGE (V)
15
16
10
20
30
40
50
60
Q
G
, GATE CHARGE (nC)
70
80
FIGURE 13. TRANSFER CHARACTERISTIC
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
FIGURE 14. GATE CHARGE WAVEFORMS
R
G
= 10Ω, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
1.2
1.0
0.8
10
T
J
= 125
o
C, L = 500µH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 24A
0.6
0.4
I
CE
= 12A
0.2
I
CE
= 6A
0
25
50
75
100
125
150
I
CE
= 24A
1
I
CE
= 12A
I
CE
= 6A
0.1
5
10
100
R
G
, GATE RESISTANCE (Ω)
1000
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Sound Information
Sound Pressure LevelSound Pressure Level (SPL) decreases proportionately with distance "x" from the sound source. Figures 1 and 2 show the SPL drop off, expres ......
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