HCS20NT60V
Jan 2014
BV
DSS
= 600 V
HCS20NT60V
600V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 54 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 0.17
100% Avalanche Tested
RoHS Compliant
GS
=10V
R
DS(on) typ
= 0.17
I
D
= 20 A
TO-220F
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25
unless otherwise specified
Parameter
Value
600
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
– Continuous (T
C
= 25
– Continuous (T
C
= 100
– Pulsed
)
)
20*
12.5*
60*
20
(Note 1)
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25 )
- Derate above 25
Operating and Storage Temperature Range
(Note 2)
(Note 1)
(Note 1)
(Note 3)
500
20
1
4.5
34.5
0.28
-55 to +150
300
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
R
R
JC
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
3.6
80
Units
/W
HCS20NT60V
Package Marking and Ordering Information
Device Marking
HCS20NT60V
HCS20NT60V
Week Marking
YWWX
YWWXg
Package
TO-220F
TO-220F
Packing
Tube
Tube
Quantity
50
50
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics
T
J
=25
Symbol
Parameter
C unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
V
GS
= 10 V, I
D
= 10 A
V
DS
= 30 V, I
D
= 10 A
2.5
--
--
--
0.17
18.8
3.5
0.19
--
V
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125
V
GS
=
20 V, V
DS
= 0 V
600
--
--
--
--
--
--
--
--
1
10
100
V
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 50 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
2140
300
18
2780
390
23.5
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 480V, I
D
= 20 A,
V
GS
= 10 V
(Note 4,5)
(Note 4,5)
V
DS
= 300 V, I
D
= 20 A,
R
G
= 25
--
--
--
--
--
--
--
40
110
310
110
54
10
20
90
230
630
230
70
--
--
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 20 A, V
GS
= 0 V
I
S
= 20 A, V
GS
= 0 V
di
F
/dt = 100 A/
(Note 4)
--
--
--
--
--
--
--
--
440
5
20
60
1.2
--
--
A
V
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=2.3mH, I
AS
=20A, V
DD
=50V, R
G
=25 , Starting T
J
=25 C
3. I
SD
di/dt
, V
DD
DSS
, Starting T
J
=25 C
4. Pulse Test : Pulse Width
5. Essentially Independent of Operating Temperature
HCS20NT60V
Typical Characteristics
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
HCS20NT60V
Typical Characteristics
(continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
20
Figure 8. On-Resistance Variation
vs Temperature
16
I
D
, Drain Current [A]
12
8
4
0
25
50
75
100
o
125
150
T
J
, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
HCS20NT60V
Fig 12. Gate Charge Test Circuit & Waveform
Same Type
as DUT
12V
200nF
300nF
V
GS
Q
g
10V
V
GS
V
DS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
