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MBRF1060CT-YC0: 产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN; 产品类别分立半导体二极管; 文件大小220KB，共4页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/; 标准

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MBRF1060CT-YC0概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

MBRF1060CT-YC0规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Taiwan Semiconductor
包装说明	ITO-220AB, 3 PIN
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	LOW POWER LOSS
应用	EFFICIENCY
外壳连接	ISOLATED
配置	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	0.9 V
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
JESD-609代码	e3
最大非重复峰值正向电流	120 A
元件数量	2
相数	1
端子数量	3
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	5 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
最大重复峰值反向电压	60 V
最大反向电流	100 µA
表面贴装	NO
技术	SCHOTTKY
端子面层	MATTE TIN
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED

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MBRF1045CT-Y thru MBRF10200CT-Y

Taiwan Semiconductor

CREAT BY ART

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Dual Common Cathode Schottky Rectifier

MECHANICAL DATA

Case:

ITO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity:

As marked

Mounting torque:

5 in-lbs maximum

Weight:

1.7 g (approximately)

ITO-220AB

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

MBRF

PARAMETER

SYMBOL

1045

CT-Y

Marking code

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak repetitive forward current

(Rated VR, Square wave, 20KHz)

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

Peak repetitive reverse surge current (Note 1)

Maximum instantaneous forward voltage (Note 2)

= 5 A, T

=25℃

= 5 A, T

=125℃

= 10 A, T

=25℃

= 10 A, T

=125℃

Maximum reverse current @ rated VR

Voltage rate of change (Rated V

)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: tp = 2.0

μs,

1.0KHz

Note 2: Pulse test with PW=300μs, 1% duty cycle

=25

℃

=125

℃

RRM

RMS

F(AV)

FRM

FSM

RRM

0.70

0.57

0.80

0.67

dV/dt

θJC

STG

0.80

0.65

0.90

0.75

10000

3.5

- 55 to +150

MBRF10

45CT

MBRF

1060

CT-Y

MBRF10

60CT

MBRF

10100

CT-Y

MBRF10

100CT

100

120

0.5

0.85

0.75

0.95

0.85

0.1

0.88

0.78

0.98

0.88

V/μs

MBRF

10150

CT-Y

MBRF10

150CT

150

105

150

MBRF

10200

CT-Y

MBRF10

200CT

200

140

200

UNIT

C/W

Document Number: DS_D1405045

Version: A14

MBRF1060CT-YC0相似产品对比

	MBRF1060CT-YC0	MBRF1045CT-YC0	MBRF10200CT-YC0	MBRF10200CT-YC0G	MBRF10100CT-YC0	MBRF1060CT-YC0G
描述	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 45V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 60V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
是否Rohs认证	符合	符合	符合	符合	符合	符合
厂商名称	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
包装说明	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN	R-PSFM-T3	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.9 V	0.8 V	0.98 V	0.98 V	0.95 V	0.9 V
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
JESD-609代码	e3	e3	e3	e3	e3	e3
最大非重复峰值正向电流	120 A	120 A	120 A	120 A	120 A	120 A
元件数量	2	2	2	2	2	2
相数	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	5 A	5 A	5 A	5 A	5 A	5 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
最大重复峰值反向电压	60 V	45 V	200 V	200 V	100 V	60 V
最大反向电流	100 µA	100 µA	100 µA	100 µA	100 µA	100 µA
表面贴装	NO	NO	NO	NO	NO	NO
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

MBRF1060CT-YC0

MBRF1060CT-YC0概述

MBRF1060CT-YC0规格参数

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