DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLF404
UHF power MOS transistor
Product specification
Supersedes data of 1997 Oct 28
1998 Jan 29
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES
•
High power gain
•
Easy power control
•
Gold metallization
•
Good thermal stability
•
Withstands full load mismatch
•
Designed for broadband operation.
APPLICATIONS
handbook, halfpage
BLF404
PINNING
PIN
1, 8
2, 3
4, 5
6, 7
source
gate
source
drain
DESCRIPTION
8
5
•
Communication transmitters in the VHF/UHF range with
a nominal supply voltage of 12.5 V.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
power transistor in an 8-lead SOT409A SMD package with
a ceramic cap.
1
Top view
4
MBK150
Fig.1 Simplified outline SOT409A.
QUICK REFERENCE DATA
RF performance at T
mb
≤
60
°C
in a common source test circuit.
MODE OF OPERATION
CW class-AB
f
(MHz)
500
V
DS
(V)
12.5
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
P
L
(W)
4
G
p
(dB)
≥10
η
D
(%)
≥50
1998 Jan 29
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
DS
V
GS
I
D
P
tot
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
T
mb
≤
85
°C
CONDITIONS
−
−
−
−
−65
−
MIN.
BLF404
MAX.
40
±20
1.5
8.3
150
200
V
V
A
W
UNIT
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
thermal resistance from junction to mounting base
CONDITIONS
T
mb
≤
85
°C,
P
tot
= 8.3 W
VALUE
12.1
UNIT
K/W
MGM522
handbook, halfpage
10
ID
(A)
1
(1)
(2)
10
−1
1
10
VDS (V)
10
2
(1) Current in this area may be limited by R
DSon
.
(2) T
mb
= 85
°C.
Fig.2 DC SOAR.
1998 Jan 29
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
I
DSX
R
DSon
g
fs
C
is
C
os
C
rs
PARAMETER
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
on-state drain current
forward transconductance
input capacitance
output capacitance
feedback capacitance
CONDITIONS
I
D
= 50 mA; V
DS
= 10 V
V
GS
= 0; V
DS
= 12.5 V
V
DS
= 0; V
GS
=
±20
V
V
GS
= 15 V; V
DS
= 10 V
I
D
= 0.7 A; V
DS
= 10 V
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
V
GS
= 0; V
DS
= 12.5 V; f = 1 MHz
2
−
−
−
−
200
−
−
−
MIN.
40
−
−
−
−
2.3
1.8
270
14
17
3
TYP.
BLF404
MAX.
−
4.5
0.5
1
−
2.7
−
−
−
−
UNIT
V
V
mA
µA
A
Ω
mS
pF
pF
pF
drain-source breakdown voltage V
GS
= 0; I
D
= 5 mA
drain-source on-state resistance I
D
= 0.7 A; V
GS
= 15 V
handbook, halfpage
25
MRA254
handbook, halfpage
3
MRA249
T.C.
(mV/K)
ID
(A)
2
15
5
1
−5
10
10
2
10
3
ID(mA)
10
4
0
0
4
8
12
16
20
VGS (V)
V
DS
= 10 V.
V
DS
= 10 V; T
j
= 25
°C.
Fig.3
Temperature coefficient of gate-source
voltage as a function of drain current;
typical values.
Fig.4
Drain current as a function of gate-source
voltage; typical values.
1998 Jan 29
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF404
handbook, halfpage
5
MRA253
MRA246
50
handbook, halfpage
C
(pF)
40
RDSon
(Ω)
4
3
30
2
20
Cos
1
10
Cis
0
0
50
100
Tj
(
o
C)
150
0
0
4
8
12
VDS (V)
16
I
D
= 0.7 A; V
GS
= 15 V.
V
GS
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.5
Drain-source on-state resistance as a
function of junction temperature;
typical values.
Fig.6
Input and output capacitance as functions
of drain-source voltage; typical values.
handbook, halfpage
10
MRA256
Crs
(pF)
8
6
4
2
0
0
4
8
12
VDS (V)
16
V
GS
= 0; f = 1 MHz; T
j
= 25
°C.
Fig.7
Feedback capacitance as a function of
drain-source voltage; typical values.
1998 Jan 29
5
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