OBSOLETE
MT5C1009
SRAM
FEATURES
•
•
•
•
High speed: 20, 25, 35, 45, 55 and 70ns
Automatic Chip Enable power down
All inputs and outputs are TTL compatible
High-performance, low-power CMOS double-metal
process
• Single +5V
±10%
power supply
• Fast Output Enable access time: 8ns
• Replaces industry standard 128K x 8 multichip SRAM
module
128K x 8 SRAM
WITH SINGLE CHIP ENABLE
PIN ASSIGNMENT (Top View)
32-Pin DIP
(A-12, A-13)
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ1
DQ2
DQ3
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
NC
WE
A13
A8
A9
A11
OE
A10
CE
DQ8
DQ7
DQ6
DQ5
DQ4
OPTIONS
MARKING
• Timing
20ns access
-20
25ns access
-25
35ns access
-35
45ns access
-45
55ns access
-55*
70ns access
-70*
*Electrical characteristics identical to those provided
for the 45ns device.
• Packages
Plastic DIP (400 mil)
None
Plastic DIP (600 mil)
W
Plastic SOJ (400 mil)
DJ
Available in ceramic packages tested to meet military
specifications. Please refer to Micron’s
Military Data
Book.
• 2V data retention
• Temperature
Industrial
(-40°C to +85°C)
Automotive (-40°C to +125°C)
Extended
(-55°C to +125°C)
L
32-Pin SOJ
(E-11)
NC
A16
A14
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
NC
WE
A13
A8
A9
A11
OE
A10
CE
DQ8
DQ7
DQ6
DQ5
DQ4
IT
AT
XT
A2
A1
A0
DQ1
DQ2
DQ3
Vss
GENERAL DESCRIPTION
The Micron SRAM family employs high-speed, low-
power CMOS designs using a four-transistor memory cell.
Micron SRAMs are fabricated using double-layer metal,
double-layer polysilicon technology.
Writing to these devices is accomplished when write
enable (?W
/
E) and
/
C
/
E inputs are both LOW. Reading is
MT5C1009
REV. 11/91
accomplished when
?
W
/
E remains HIGH and
/
C
/
E goes LOW.
The device offers a reduced power standby mode when
disabled. This allows system designers to achieve their low
standby power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL compatible.
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1991,
Micron Technology, Inc.
OBSOLETE
MT5C1009
FUNCTIONAL BLOCK DIAGRAM
Vcc
GND
A16
A9
A4
DQ8
ROW DECODER
A5
A12
A11
A13
A8
A6
1,048,576-BIT
MEMORY ARRAY
I/O CONTROL
DQ1
CE
(LSB)
OE
WE
COLUMN DECODER
(LSB)
POWER
DOWN
A3
A0
A1
A2
A7
A14
A10
A15
NOTE:
The two least significant row address bits (A8 and A6) are encoded using a gray code.
TRUTH TABLE
MODE
STANDBY
READ
READ
WRITE
/
O
/
E
X
L
H
X
/
C
/
E
H
L
L
L
?
W
/
E
X
H
H
L
DQ
HIGH-Z
Q
HIGH-Z
D
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
MT5C1009
REV. 11/91
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1991,
Micron Technology, Inc.
OBSOLETE
MT5C1009
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
CC
Supply Relative to Vss ............. -1V to +7V
Storage Temperature (Plastic) .................... -55°C to +150°C
Power Dissipation ............................................................. 1W
Short Circuit Output Current ..................................... 50mA
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions above those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(0°C
≤
T
≤
70°C; Vcc = 5V
±10%)
A
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
0V
≤
V
IN
≤
V
CC
Output(s) Disabled
0V
≤
V
OUT
≤
V
CC
I
OH
= -4.0mA
I
OL
= 8.0mA
CONDITIONS
SYMBOL
V
IH
V
IL
IL
I
IL
O
V
OH
V
OL
MIN
2.2
-0.5
-5
-5
2.4
0.4
MAX
V
CC
+1
0.8
5
5
UNITS
V
V
µA
µA
V
V
1
1
NOTES
1
1, 2
MAX
DESCRIPTION
Power Supply
Current: Operating
Power Supply
Current: Standby
CONDITIONS
/
C
/
E
≤
V
IL
; V
CC
= MAX
f = MAX = 1/
t
RC
Outputs Open
/
C
/
E
≥
V
IH
; V
CC
= MAX
f = MAX = 1/
t
RC
Outputs Open
/
C
/
E
≥
V
CC
-0.2V; V
CC
= MAX
V
IL
≤
V
SS
+0.2V
V
IH
≥
V
CC
-0.2V; f = 0
“L” version only
/
C
/
E
≥
V
CC
-0.2V; V
CC
= MAX
V
IL
≤
V
SS
+0.2V
V
IH
≥
V
CC
-0.2V; f = 0
SYMBOL
I
CC
TYP
95
-20
140
-25
125
-35
115
-45
110
UNITS
mA
NOTES
3, 14
I
SB1
17
35
30
25
25
mA
14
I
SB2
0.4
5
5
5
5
mA
14
I
SB2
0.3
1.5
1.5
1.5
1.5
mA
CAPACITANCE
DESCRIPTION
Input Capacitance
Output Capacitance
CONDITIONS
T = 25°C, f = 1 MHz
A
V
CC
= 5V
SYMBOL
C
I
C
O
MAX
8
8
UNITS
pF
pF
NOTES
4
4
MT5C1009
REV. 11/91
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1991,
Micron Technology, Inc.
OBSOLETE
MT5C1009
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5, 13) (0°C
≤
T
≤
70°C; V
CC
= 5V
±10%)
A
-20
-25
MAX
MIN
MAX
MIN
-35
MAX
MIN
-45
MAX
UNITS NOTES
DESCRIPTION
SYM
READ Cycle
READ cycle time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE Cycle
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
t
WC
t
CW
t
AW
t
AS
t
AH
t
WP1
t
WP2
t
DS
t
DH
t
LZWE
t
HZWE
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
AOE
t
LZOE
t
HZOE
MIN
20
20
20
5
5
8
0
20
6
0
6
25
25
25
5
5
10
0
25
8
0
10
35
35
35
5
5
15
0
35
12
0
12
45
45
45
5
5
18
0
45
15
0
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6
6, 7
20
12
12
0
0
12
15
8
0
5
0
8
25
15
15
0
0
15
15
10
0
5
0
10
35
20
20
0
0
20
20
15
0
5
0
15
45
25
25
0
0
25
25
20
0
5
0
18
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
6, 7
MT5C1009
REV. 11/91
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1991,
Micron Technology, Inc.
OBSOLETE
MT5C1009
AC TEST CONDITIONS
Input pulse levels ................................... Vss to 3.0V
Input rise and fall times ....................................... 5ns
Input timing reference levels ............................. 1.5V
Output reference levels ..................................... 1.5V
Output load .............................. See Figures 1 and 2
Fig. 1 OUTPUT LOAD
EQUIVALENT
Fig. 2 OUTPUT LOAD
EQUIVALENT
Q
255
30 pF
+5V
480
Q
255
5 pF
+5V
480
NOTES
1. All voltages referenced to V
SS
(GND).
2. -3V for pulse width < 20ns.
3. I
CC
is dependent on output loading and cycle rates.
The specified value applies with the outputs
1
unloaded, and f =
Hz.
t
RC (MIN)
4. This parameter is sampled.
5. Test conditions as specified with the output loading
as shown in Fig. 1 unless otherwise noted.
6.
t
HZCE,
t
HZOE and
t
HZWE are specified with
CL = 5pF as in Fig. 2. Transition is measured
±500mV
from steady state voltage.
7. At any given temperature and voltage condition,
t
HZCE is less than
t
LZCE, and
t
HZWE is less than
t
LZWE.
8.
?
WE is HIGH for READ cycle.
/
9. Device is continuously selected. Chip enable and
output enables are held in their active state.
10. Address valid prior to or coincident with latest
occurring chip enable.
11.
t
RC = Read Cycle Time.
12. Chip enable (/C
/
E) and write enable (?WE) can initiate
/
and terminate a WRITE cycle.
13. For automotive, industrial and extended temperature
specifications, refer to page 1-177.
14. Typical values are measured at 5V, 25°C and 25ns
cycle time.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)
DESCRIPTION
V
CC
for Retention Data
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
/
C
/
E
≥
(Vcc -0.2V)
V
IN
≥
(V
CC
-0.2V)
or
≤
0.2V
V
CC
= 2V
V
CC
= 3V
V
CC
= 5V
CONDITIONS
SYMBOL
V
DR
I
CCDR
MIN
2
35
70
250
0
t
RC
TYP
MAX
—
200
400
1,300
—
UNITS
V
µA
µA
µA
ns
ns
NOTES
t
CDR
t
R
4
4, 11
,
,,,
Vcc
CE
V
IH
V
IL
MT5C1009
REV. 11/91
LOW V
CC
DATA RETENTION WAVEFORM
DATA RETENTION MODE
4.5V
V
DR
tCDR
V
DR
5
,
,,,
,,,
,,
,,
4.5V
tR
DON’T CARE
UNDEFINED
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1991,
Micron Technology, Inc.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
