IRF8306MPbF
l
RoHS Compliant
Containing No Lead and Halogen Free
l
Typical values (unless otherwise specified)
HEXFET
®
Power MOSFET plus Schottky Diode
Integrated Monolithic Schottky Diode
V
DSS
V
GS
R
DS(on)
R
DS(on)
l
Low Profile (<0.7 mm)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
l
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
Ultra Low Package Inductance
25nC
6.7nC
3.0nC
29nC
22nC
1.8V
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Sync. FET socket of Sync. Buck Converter
S
G
l
Low Conduction and Switching Losses
D
D
S
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF8306MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8306MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8306MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Orderable part number
IRF8306MTRPbF
IRF8306MTR1PbF
Package Type
DirectFET MX
DirectFET MX
Standard Pack
Form
Quantity
Tape and Reel
4800
Tape and Reel
1000
Note
"TR" suffix
"TR1" suffix EOL notice # 264
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
Max.
30
±20
23
18
140
180
230
18
Units
V
Single Pulse Avalanche Energy
g
e
@ 10V
e
@ 10V
f
h
VGS, Gate-to-Source Voltage (V)
A
10
Typical RDS(on) (mΩ)
Ãg
mJ
A
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
60
80
QG Total Gate Charge (nC)
ID= 18A
VDS= 24V
VDS= 15V
VDS= 6V
8
6
4
2
0
2
4
6
8
10
12
14
TJ = 125°C
ID = 23A
TJ = 25°C
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.37mH, R
G
= 50Ω, I
AS
= 18A.
1
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IRF8306MPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
61
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
2.7
1.8
2.8
1.8
-4.8
–––
–––
–––
–––
–––
25
7.3
3.0
6.7
8.0
9.7
22
1.3
16
34
19
19
4110
970
340
–––
–––
2.5
3.6
2.35
–––
500
5.0
100
-100
–––
38
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
mV/°C Reference to 25°C, I
D
= 6mA
mΩ V
GS
= 10V, I
D
= 23A
V
GS
= 4.5V, I
D
V
V
DS
= V
GS
, I
D
= 100μA
i
= 18A
i
mV/°C V
DS
= V
GS
, I
D
= 10mA
μA
V
DS
= 24V, V
GS
= 0V
mA
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 18A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 18A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 18A
R
G
= 1.8Ω
See Fig. 17
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.7
21
29
23
A
180
0.75
32
44
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ãg
p-n junction diode.
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
T
J
= 25°C, I
F
= 18A
di/dt = 300A/μs
i
S
i
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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IRF8306MPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.1
1.3
75
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
Thermal Response ( ZthJA )
el
jl
kl
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.017
Max.
60
–––
–––
1.66
–––
Units
°C/W
eÃ
W/°C
10
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
1
τ
2
τ
3
τ
4
τ
4
τ
1
0.1
Ci=
τi/Ri
Ci i/Ri
Ri (°C/W)
τι
(sec)
24.84696 2.379018
10.92897 0.219018
3.658783 0.00733
20.42272 15.9657
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
May 7, 2014
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IRF8306MPbF
1000
TOP
VGS
10V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
2.3V
1000
TOP
VGS
10V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
2.3V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.3V
0.1
0.1
1
2.3V
≤60μs
PULSE WIDTH
Tj = 25°C
1
100
0.1
1
10
≤60μs
PULSE WIDTH
Tj = 150°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60μs
PULSE WIDTH
100
TJ = 150°C
TJ = 25°C
10
TJ = -40°C
2.0
Fig 5.
Typical Output Characteristics
ID = 23A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current(A)
1.5
VGS = 10V
VGS = 4.5V
1.0
1
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
VGS, Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance vs. Temperature
5
TJ = 25°C
4
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
10000
Ciss
Coss
Crss
Typical RDS (on) (mΩ)
Coss = Cds + Cgd
C, Capacitance(pF)
3
1000
2
100
1
10
VDS , Drain-to-Source Voltage (V)
100
1
0
50
100
150
200
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
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Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
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IRF8306MPbF
1000
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
100
100μsec
10
1msec
1
DC
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0.0
0.1
1.0
10msec
100
10
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
1
0.01
10.0
100.0
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.5
140
120
ID, Drain Current (A)
100
80
60
40
20
0
25
50
75
100
125
150
TC , Case Temperature (°C)
2.0
ID = 10mA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
900
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
1.1A
1.8A
BOTTOM 18A
800
700
600
500
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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May 7, 2014
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