IRF7739L1TRPbF
Applications
l
RoHS Compliant, Halogen Free
l
Lead-Free (Qualified up to 260°C Reflow)
l
Ideal for High Performance Isolated Converter
Primary Switch Socket
l
Optimized for Synchronous Rectification
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
l
Industrial Qualified
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
Typical values (unless otherwise specified)
DirectFET Power MOSFET
V
DSS
V
GS
Q
gd
81nC
R
DS(on)
V
gs(th)
2.8V
40V min
±20V max 0.70mΩ@ 10V
Q
g
tot
220nC
S
S
D
S
G
S
S
S
S
S
D
L8
DirectFET ISOMETRIC
L4
L6
L8
The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D
2
PAK and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when
application note AN-1035
is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF7739L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Description
Ordering Information
Base part number
IRF7739L1TRPbF
Package Type
DirectFET Large Can
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRF7739L1TRPbF
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
A
= 25°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
10
Typical RDS(on) (mΩ)
Max.
40
±20
270
190
46
375
1070
270
160
VGS = 10V
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
f
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
f
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
e
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
f
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
A
g
Ãg
h
mJ
A
0.93
Typical RDS (on) (mΩ)
8
6
4
2
0
5.0
5.5
6.0
6.5
7.0
T J = 25°C
ID = 160A
0.92
0.91
0.90
0.89
0.88
0.87
0.86
0.85
0
T J = 125°C
7.5
8.0
40
80
120
160
200
Click on the hyperlink (to the relevant technical document) for more details.
Click on the hyperlink (to the DirectFET website) for more details
Surface mounted on 1 in. square Cu board, steady state.
Notes:
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
ID , Drain Current (A)
Fig 2.
Typical On-Resistance vs. Drain Current
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.021mH, R
G
= 25Ω, I
AS
= 160A.
1
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©
2012 International Rectifier
February 13 ,2013
IRF7739L1TRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
ΔΒV
DSS
/ΔT
J
R
DS(on)
V
GS(th)
ΔV
GS(th)
/ΔT
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min.
40
–––
–––
2.0
–––
–––
–––
–––
–––
280
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.008
0.70
2.8
-6.7
–––
–––
–––
–––
–––
220
46
19
81
74
100
83
1.5
21
71
56
42
11880
2510
1240
8610
2230
–––
–––
1.0
4.0
–––
20
250
100
-100
–––
330
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1.0mA
mΩ V
GS
= 10V, I
D
= 160A
V
DS
= V
GS
, I
D
= 250μA
V
V
i
mV/°C
μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
nA
S
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 160A
V
DS
= 20V
nC
V
GS
= 10V
I
D
= 160A
See Fig. 9
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 10V
I
D
= 160A
ns
R
G
=1.8Ω
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 32V, f=1.0MHz
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
87
250
110
A
1070
1.3
130
380
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 160A, V
GS
= 0V
T
J
= 25°C, I
F
= 160A, V
DD
= 20V
di/dt = 100A/μs
Ãg
i
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
2%.
2
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©
2012 International Rectifier
February 13 ,2013
IRF7739L1TRPbF
Absolute Maximum Ratings
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
P
D
@T
A
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
f
f
c
Parameter
Max.
125
63
3.8
270
-55 to + 175
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJ-Can
R
θJ-PCB
10
Thermal Response ( Z thJC ) °C/W
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
fl
e
j
k
Parameter
Typ.
–––
12.5
20
–––
–––
Max.
40
–––
–––
1.2
0.4
Units
°C/W
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
0.1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
4
Ri (°C/W)
0.1080
0.6140
0.4520
1.47e-05
0.000171
0.053914
0.006099
τi
(sec)
0.01
τ
1
τ
2
τ
3
τ
4
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
0.036168
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
3
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Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
February 13 ,2013
©
2012 International Rectifier
IRF7739L1TRPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
≤
60μs PULSE WIDTH
Tj = 175°C
1
≤
60μs PULSE WIDTH
Tj = 25°C
4.5V
4.5V
10
0.1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
Fig 5.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 160A
ID, Drain-to-Source Current (A)
VGS = 10V
100
T J = 175°C
10
T J = 25°C
1.5
1.0
1
VDS = 25V
≤60μs
PULSE WIDTH
2
3
4
5
6
7
8
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 7.
Normalized On-Resistance vs. Temperature
14.0
ID= 160A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 32V
VDS= 20V
10000
Ciss
Coss
Crss
1000
1
10
VDS, Drain-to-Source Voltage (V)
100
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
4
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©
2012 International Rectifier
Fig 9.
Typical Total Gate Charge vs.
Gate-to-Source Voltage
February 13 ,2013
IRF7739L1TRPbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100μsec
TJ = 175°C
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10msec
1msec
10
T J = 25°C
VGS = 0V
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
300
250
ID, Drain Current (A)
Fig11.
Maximum Safe Operating Area
5.0
VGS(th), Gate threshold Voltage (V)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
ID = 250μA
ID = 1.0mA
ID = 1.0A
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
1100
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs.
Junction Temperature
ID
TOP
29A
46A
BOTTOM 160A
1000
900
800
700
600
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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©
2012 International Rectifier
February 13 ,2013
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