PD -97082
IRF6617PbF
IRF6617TRPbF
l
l
l
l
l
l
l
l
l
RoHS Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
V
DSS
30V
R
DS(on)
max
8.1mΩ@V
GS
= 10V
10.3mΩ@V
GS
= 4.5V
Qg(typ.)
11nC
Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)
SQ
SX
ST
MQ
MX
MT
ST
DirectFET ISOMETRIC
Description
The IRF6617PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has the footprint of a
Micro8™
and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6617PbF balances both low resistance and low charge along with ultra low package inductance to reduce both
conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that
power the latest generation of processors operating at higher frequencies. The IRF6617PbF has been optimized for param-
eters that are critical in synchronous buck converters including
R
DS(on)
and gate charge to minimize losses in the control FET
socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
I
AR
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
Max.
30
±20
55
14
11
120
42
2.1
Units
V
i
Power Dissipation
f
Power Dissipation
f
i
@ 10V
Ãf
@ 10V
f
A
W
mJ
A
W/°C
°C
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
1.4
27
12
0.017
-40 to + 150
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
fj
Junction-to-Ambient
gj
Junction-to-Ambient
hj
Junction-to-Case
ij
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
58
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
Notes
through
are on page 2
www.irf.com
1
5/3/06
IRF6617PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
25
6.2
7.9
–––
-5.4
–––
–––
–––
–––
–––
11
3.1
1.0
4.0
2.9
5.0
10
11
34
12
3.7
1300
430
160
–––
–––
8.1
10.3
2.35
–––
1.0
150
100
-100
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
nC
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 12A
See Fig. 16
S
nA
V
mV/°C
µA
V
mΩ
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 15A
e
V
GS
= 4.5V, I
D
= 12A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 12A
mV/°C Reference to 25°C, I
D
= 1mA
V
DS
= 15V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
e
I
D
= 12A
Clamped Inductive Load
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.81
16
7.2
53
A
120
1.0
24
11
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
e
T
J
= 25°C, I
F
= 12A
di/dt = 100A/µs
e
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.40mH,
R
G
= 25Ω, I
AS
= 12A.
Pulse width
≤
400µs; duty cycle
≤
2%.
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
2
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IRF6617PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.5V
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
10
100
2.5V
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000.0
Fig 2.
Typical Output Characteristics
2.0
100.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 15A
VGS = 10V
1.5
10.0
T J = 150°C
T J = 25°C
1.0
1.0
VDS = 15V
≤
60µs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
6.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
12
ID= 12A
VGS, Gate-to-Source Voltage (V)
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
5
10
15
20
25
30
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
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Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
3
IRF6617PbF
1000.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
ISD, Reverse Drain Current (A)
100.0
T J = 150°C
10.0
10
100µsec
1msec
1.0
T J = 25°C
VGS = 0V
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
10msec
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
60
2.5
Fig 8.
Maximum Safe Operating Area
50
40
VGS(th) Gate threshold Voltage (V)
ID , Drain Current (A)
2.0
30
ID = 250µA
20
1.5
10
0
25
50
75
100
125
150
1.0
-75
-50
-25
0
25
50
75
100
125
150
T J , Junction Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
100
Fig 10.
Threshold Voltage vs. Temperature
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
1
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
C
Ri (°C/W)
τ
A
τ
τi
(sec)
0.000066
0.000896
0.004386
0.68618
32
0.6676
1.0462
1.5611
29.282
25.455
τ
1
0.1
τ
2
τ
3
τ
4
τ
5
τ
5
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6617PbF
RDS(on), Drain-to -Source On Resistance ( mΩ)
ID = 15A
20
EAS, Single Pulse Avalanche Energy (mJ)
24
120
100
ID
TOP
5.2A
7.9A
BOTTOM
12A
80
16
60
12
T J = 125°C
40
8
20
T J = 25°C
4
2.0
4.0
6.0
8.0
10.0
0
25
50
75
100
125
150
VGS, Gate-to-Source Voltage (V)
Starting T J, Junction Temperature (°C)
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13.
Maximum Avalanche Energy Vs. Drain Current
V
(BR)DSS
15V
tp
DRIVER
VDS
L
RG
V
GS
20V
D.U.T
IAS
tp
+
V
- DD
A
0.01
Ω
I
AS
Fig 14a.
Unclamped Inductive Test Circuit
L
D
V
DS
Fig 14b.
Unclamped Inductive Waveforms
+
V
DD
-
D.U.T
V
GS
Pulse Width < 1µs
Duty Factor < 0.1%
90%
V
DS
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 15a.
Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
Fig 15b.
Switching Time Waveforms
Id
Vds
Vgs
50KΩ
12V
.2µF
.3µF
D.U.T.
V
GS
3mA
+
V
-
DS
Vgs(th)
I
G
I
D
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 16a.
Gate Charge Test Circuit
Fig 16b.
Gate Charge Waveform
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