FMC12N50ES
Super FAP-E
3S
series
Features
Maintains both low power loss and low noise
Lower R
DS
(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller V
GS
ringing waveform during switching
Narrow band of the gate threshold voltage (3.7±0.5V)
High avalanche durability
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
T-Pack (S)
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Gate(G)
Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive Maximum Avalanche Current
Non-Repetitive Maximum Avalanche Energy
Repetitive Maximum Avalanche Energy
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Maximum Power Dissipation
Operating and Storage Temperature range
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
E
AR
dV/dt
-di/dt
P
D
T
ch
T
stg
Characteristics
500
500
±12
±48
±30
12
460.8
18.0
6.3
100
1.67
180
150
-55 to + 150
Unit
V
V
A
A
V
A
mJ
mJ
kV/µs
A/µs
W
°C
°C
Remarks
V
GS
= -30V
Note*1
Note*2
Note*3
Note*4
Note*5
Ta=25°C
Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Drain Crossover Charge
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BV
DSS
V
GS
(th)
I
DSS
I
GSS
R
DS
(on)
g
fs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
G
Q
GS
Q
GD
Q
SW
I
AV
V
SD
trr
Qrr
Conditions
I
D
=250µA, V
GS
=0V
I
D
=250µA, V
DS
=V
GS
V
DS
=500V, V
GS
=0V
V
DS
=400V, V
GS
=0V
V
GS
=±30V, V
DS
=0V
I
D
=6A, V
GS
=10V
I
D
=6A, V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
cc
=300V
V
GS
=10V
I
D
=6A
R
G
=15Ω
V
cc
=250V
I
D
=12A
V
GS
=10V
L=2.44mH, T
ch
=25°C
I
F
=12A, V
GS
=0V, T
ch
=25°C
I
F
=12A, V
GS
=0V
-di/dt=100A/µs, Tch=25°C
min.
500
3.2
-
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
12
-
-
-
typ.
-
3.7
-
-
10
0.427
9
1400
160
11.5
31
18
83
16
43
13
14
6
-
0.86
0.37
5.0
max.
-
4.2
25
250
100
0.50
-
2100
240
17.5
46.5
27
124.5
27
56
23
21
10
-
1.30
-
-
Unit
V
V
µA
nA
Ω
S
pF
T
ch
=25°C
T
ch
=125°C
ns
nC
A
V
µs
µC
Thermal Characteristics
Description
Thermal resistance
Symbol
Rth (ch-c)
Rth (ch-a)
Test Conditions
Channel to Case
Channel to Ambient
min.
typ.
max.
0.690
75.0
Unit
°C/W
°C/W
Note *1 : Tch≤150°C.
Note *2 : Stating Tch=25°C, I
AS
=5A, L=33.8mH, Vcc=50V, R
G
=50Ω.
E
AS
limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : I
F
≤-I
D
, -di/dt=100A/μs, Vcc≤BV
DSS
, Tch≤150°C.
Note *5 : I
F
≤-I
D
, dv/dt=6.3kV/μs, Vcc≤BV
DSS
, Tch≤150°C.
1
FMC12N50ES
Allowable Power Dissipation
PD=f(Tc)
Safe Operating Area
I
D
=f(V
DS
):Duty=0(Single pulse),Tc=25
°
c
FUJI POWER MOSFET
200
180
160
140
120
PD [W]
10
2
t=
1
µ
s
10
µ
s
100
µ
s
10
1
ID [A]
100
80
60
40
20
0
0
25
50
75
Tc [
°
C]
100
125
150
10
0
1ms
10
-1
Power loss waveform :
Square waveform
P
D
t
10
-2
10
-1
10
0
10
VDS [V]
1
10
2
10
3
30
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
100
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
25
20
ID[A]
10
ID [A]
15
1
10
5
0.1
0
0
4
8
12
VDS [V]
16
20
24
0
1
2
3
4
5
VGS[V]
6
7
8
9
10
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
0.9
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
VGS=6.0V
6.5V
0.8
10
RDS(on) [
Ω
]
0.7
7V
8V 10V
20V
gfs [S]
0.6
1
0.5
0.4
0.1
0.1
1
ID [A]
10
100
0.3
0
5
10
ID [A]
15
20
2
FMC12N50ES
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6A,VGS=10V
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
FUJI POWER MOSFET
2.0
1.8
1.6
8
7
6
1.4
RDS(on) [
Ω
]
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
Tch [
°
C]
75
100
125
150
max.
typ.
VGS(th) [V]
5
4
3
2
1
0
-50
-25
0
25
50
75
Tch [
°
C]
100
125
150
max.
typ.
min.
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=12A,Tch=25
°
C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
12
10
Vcc= 100V
250V
400V
10
4
10
3
Ciss
8
VGS [V]
C [pF]
6
10
2
Coss
4
10
1
2
Crss
10
0
0
0
10
20
30
40
Qg [nC]
50
60
70
80
10
-2
10
-1
10
0
10
1
10
2
VDS [V]
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=15
Ω
td(off)
10
10
2
tf
IF [A]
t [ns]
td(on)
1
10
1
tr
0.1
0.00
0.25
0.50
0.75
VSD [V]
1.00
1.25
1.50
10
0
10
-1
10
0
10
ID [A]
1
10
2
3
FMC12N50ES
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A
FUJI POWER MOSFET
600
500
I
AS
=5A
Zth(ch-c) [°C/W]
400
EAV [mJ]
300
I
AS
=7A
200
I
AS
=12A
100
t [sec]
0
0
25
50
75
starting Tch [
°
C]
100
125
150
4
FMC12N50ES
FUJI POWER MOSFET
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either
express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or
warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
normal reliability requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment
• Electrical home appliances
• Personal equipment
• Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed
below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for
such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's
product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Trunk communications equipment
• Traffic-signal control equipment
• Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices
• Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic
equipment (without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
Technology Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Device Technology Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Device Technology Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
5
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