MIMMG150S120B6TN
1200V 150A IGBT Module
RoHS Compliant
FEATURES
□
High short circuit capability,self limiting short circuit current
3
□
IGBT CHIP(Trench+Field Stop technology)
□
V
CE(sat)
with positive temperature coefficient
□
Fast switching and short tail current
□
Free wheeling diodes with fast and soft reverse recovery
□
Low switching losses
APPLICATIONS
□
High frequency switching application
□
Medical applications
□
Motion/servo control
□
UPS systems
GS Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
Vj
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
Vj
=25°C
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
±20
200
150
300
625
V
V
A
A
A
W
1200
200
150
300
4350
V
A
A
A
A
2
s
T
Vj
=125°C, t=10ms, V
R
=0V
MIMMG150S120B6TN
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
IGBT
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
V
CE
=600V, I
C
=150A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
V
CC
=600V,I
C
=150A,
R
G
=2.4Ω,
V
GE
=±15V,
Inductive Load
V
CC
=600V,I
C
=150A,
R
G
=2.4Ω,
V
GE
=±15V,
Inductive Load
V
CC
=600V,I
C
=150A,
R
G
=2.4Ω,
V
GE
=±15V,
Inductive Load
t
ps
c
≤10µS
, V
GE
=15V
T
Vj
=125°C,V
CC
=900V
（
Per IGBT）
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
V
CE
=V
GE
, I
C
=6mA
I
C
=150A, V
GE
=15V, T
Vj
=25°C
I
C
=150A, V
GE
=15V, T
Vj
=125°C
V
CE
=1200V, V
GE
=0V, T
Vj
=25°C
V
CE
=1200V, V
GE
=0V, T
Vj
=125°C
V
CE
=0V,V
GE
±15V,
T
Vj
=125°C
-400
5
1.4
10.5
0.4
260
290
30
50
420
520
70
90
12
16
11
14.5
600
0.2
5.0
5.8
1.7
1.9
1
5
400
6.5
V
V
V
mA
mA
nA
Ω
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K /W
Parameter
Test Conditions
T
C
=25°C unless otherwise specified
Min.
Typ.
Max.
Unit
I
CES
I
GES
R
Gint
Q
ge
C
ies
C
res
t
d(on)
t
r
Rise Time
t
d(off)
Turn - off Delay Time
t
f
Fall Time
E
on
Turn - on Energy
E
off
Turn - off Energy
I
SC
R
thJC
Diode
V
F
I
RRM
Q
rr
E
rec
R
thJCD
Short Circuit Current
Junction-to-Case Thermal Resistance
Forward Voltage
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
I
F
=150A , V
GE
=0V, T
Vj
=25°C
I
F
=150A , V
GE
=0V, T
Vj
=125°C
I
F
=150A , V
R
=600V
di
F
/dt=-4000A/μs
T
Vj
=125°C
1.65
1.65
210
30.0
13
0.36
V
V
A
µC
mJ
K /W
Junction-to-Case Thermal Resistance
（
Per Diode）
MIMMG150S120B6TN
MODULE CHARACTERISTICS
Symbol
T
Vj max
T
Vj op
T
stg
V
isol
CTI
Torque
Torque
Weight
Parameter
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Module-to-Sink
Module Electrodes
Recommended（M6）
Recommended（M5）
AC, t=1min
350
3
2.5
160
5
5
N· m
N· m
g
-40
-40
3000
T
C
=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
150
125
125
Unit
°C
°C
°C
V
300
V
GE
=15V
300
240
T
Vj
=25°C
I
C
(A)
180
120
60
0
240
180
120
60
0
0
I
C
(A)
T
Vj
=125°C
T
Vj
=125°C
1.5 2.0 2.5 3.0 3.5
V
CE
（V）
Figure1. Typical Output Characteristics
0.5
1.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
（V）
Figure2. Typical Output Characteristics
300
V
CE
=20V
35
30
25
E
on
E
off
(mJ)
T
Vj
=25°C
20
15
10
240
180
120
60
0
V
CE
=600V
I
C
=150A
V
GE
=±15V
T
Vj
=125°C
E
on
I
C
(A)
T
Vj
=125°C
E
off
5
5
9
10
8
11 12
V
GE
（V）
Figure3. Typical Transfer characteristics
6
7
0
10 12 14 16
8
R
G
（Ω）
Figure4. Switching Energy vs. Gate Resistor
4
6
0
2
MIMMG150S120B6TN
40
V
CE
=600V
R
G
=2.4
Ω
V
GE
=±15V
T
Vj
=125°C
350
300
E
on
30
E
on
E
off
(mJ)
250
200
E
off
I
C
(A)
20
150
100
50
R
G
=2.4Ω
V
GE
=±15V
T
Vj
=125°C
10
150 200 250 300
I
C
（A）
Figure5. Switching Energy vs. Collector Current
0
0
50
100
0
600 800 1000 1200 1400
V
CE
（V）
Figure6. Reverse Biased Safe Operating Area
200 400
0
300
240
E
rec
(mJ)
180
I
F
(A)
120
T
Vj
=125°C
60
T
Vj
=25°C
0
0
1.2
1.8
2.4
V
F
（V）
Figure7. Diode Forward Characteristics
0.6
20.0
16.0
12.0
8.0
4.0
0
I
F
=150
A
V
CE
=600V
T
Vj
=125°C
0
8 10 12 14 16
R
G
（Ω）
Figure8. Switching Energy vs. Gate Resistor
4
6
2
20.0
R
G
=2.4Ω
V
CE
=600V
T
Vj
=125°C
1
Diode
Z
thJC
(K/W)
16.0
12.0
8.0
4.0
0
0
E
rec
(mJ)
0.1
IGBT
150 200 250 300
I
F
(A)
Figure9. Switching Energy vs. Forward Current
50
100
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance
MIMMG150S120B6TN
Figure11. Circuit Diagram
Dimensions (mm)
Figure12. Package Outline
模拟电子
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