MIMMG100SR120DE
1200V 100A IGBT Module
RoHS Compliant
FEATURES
·
Ultra Low Loss
·
High Ruggedness
·
High Short Circuit Capability
·
Positive Temperature Coefficient
·
With Fast Free-Wheeling Diodes
APPLICATIONS
·
Invertor
·
Convertor
·
Welder
·
SMPS and UPS
·
Induction Heating
GS Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
T
C
=25°C
T
C
=80°C
T
C
=25°C, t
p
=1ms
T
C
=80°C, t
p
=1ms
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
±20
150
105
300
210
690
-40 to +150
-40 to +125
AC, t=1min
3000
V
V
A
A
A
A
W
°C
°C
V
I
Cpuls
P
tot
T
J
T
STG
V
isol
Pulsed Collector Current
Power Dissipation Per IGBT
Junction Temperature Range
Storage Temperature Range
Insulation Test Voltage
Free-Wheeling Diode
V
RRM
I
F(AV)
I
F(RMS)
I
FSM
Repetitive Reverse Voltage
Average Forward Current
RMS Forward Current
Non-Repetitive Surge
Forward Current
T
J
=45°C, t=10ms, Sine
T
J
=45°C, t=8.3ms, Sine
T
C
=25°C
T
C
=80°C
1200
125
85
122
930
980
V
A
A
A
A
A
MIMMG100SR120DE
ELECTRICAL CHARACTERISTICS
Symbol
IGBT
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Switching Energy
V
CC
=600V, I
C
=100A
R
G
=10Ω,V
GE
=±15V
T
J
=25°C
Inductive Load
V
CC
=600V, I
C
=100A
R
G
=10Ω,V
GE
=±15V
T
J
=125°C
Inductive Load
V
CC
=600V, I
C
=100A
R
G
=10Ω
V
GE
=±15V
Inductive Load
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
V
CE
=25V, V
GE
=0V, f =1MHz
V
CE
=V
GE
, I
C
=4mA
I
C
=100A, V
GE
=15V, T
J
=25°C
I
C
=100A, V
GE
=15V, T
J
=125°C
V
CE
=1200V, V
GE
=0V, T
J
=25°C
V
CE
=1200V, V
GE
=0V, T
J
=125°C
V
CE
=0V, V
GE
=±20V
V
CC
=600V, I
C
=100A , V
GE
=±15V
-200
1050
7.43
0.52
0.34
125
60
420
60
135
60
490
75
8.6
12.4
6.8
10.8
5
6.2
1.8
2.0
0.2
3
200
0.5
7
V
V
V
mA
mA
nA
nC
nF
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
Parameter
Test Conditions
T
C
=25°C unless otherwise specified
Min.
Typ.
Max.
Unit
I
CES
I
GES
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Turn - off Switching Energy
Free-Wheeling Diode
V
F
t
rr
I
RRM
Q
rr
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Charge
I
F
=100A , V
GE
=0V, T
J
=25°C
I
F
=100A , V
GE
=0V, T
J
=125°C
I
F
=100A , V
R
=800V
di
F
/dt=-1000A/μs
T
J
=125°C
2.0
1.7
220
85
9.8
2.44
2.20
V
V
ns
A
µC
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
thJC
R
thJCD
Torque
Torque
Weight
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Module-to-Sink
Module Electrodes
Test Conditions
Per IGBT
Per Inverse Diode
Recommended（M6）
Recommended（M5）
3
2.5
150
Min.
Typ.
Max.
0.18
0.45
5
5
Unit
K /W
K /W
N· m
N· m
g
MIMMG100SR120DE
300
250
200
I
C
(A)
150
T
J
=125°C
300
250
200
I
C
(A)
T
J
=25°C
T
J
=25°C
V
CE
=20V
150
100
50
T
J
=125°C
100
50
0
0
1.5
2.5
3.5
2
3
V
CE(sat)
（V）
Figure1. Typical Output characteristics
0.5
1
0
0
6
8
10
12
14
V
GE
（V）
Figure2. Typical Transfer characteristics
2
4
120
100
80
60
E
on
V
CC
=600V
R
G
=10ohm
V
GE
=±15V
T
J
=125°C
50
40
30
20
10
V
CC
=600V
I
C
=100A
V
GE
=±15V
T
J
=125°C
E
on
E
on
E
off
(mJ)
40
20
0
0
E
off
E
on
E
off
(mJ)
E
off
100 150 200 250 300 350
I
C
（A）
Figure3. Switching Energy vs. Collector Current
50
0
70
30
40
50 60
R
G
（ohm）
Figure4. Switching Energy vs. Gate Resistor
0
10
20
1000
t
d(off)
1000
t
d(off)
t (ns)
t (ns)
100
t
d(on)
t
r
t
f
V
CC
=600V
R
G
=10ohm
V
GE
=±15V
T
J
=125°C
100
t
d(on)
t
f
t
r
V
CC
=600V
I
C
=100A
V
GE
=±15V
T
J
=125°C
10
0
90 120 150 180 210
I
C
（A）
Figure5. Switching Times vs. Collector Current
30
60
10
35
15
20
25 30
R
G
（ohm）
Figure6. Switching Times vs. Gate Resistor
0
5
10
MIMMG100SR120DE
25
20
15
10
5
0
0
0.1
V
CC
=600V
I
C
=100A
T
J
=25°C
10
C
ies
V
GE
(V)
C (nF)
V
GE
=0V
f=1MHz
1
C
oes
C
res
0.4
0.8
0.6
1.0
Q
g
（µC）
Figure7. Gate Charge characteristics
0.2
0
5
10
15
20
25
30
35
V
CE
（V）
Figure8. Typical Capacitances vs. V
CE
350
300
250
I
Cpuls
(A)
1800
1500
120
I
Csc
(A)
900
600
T
J
=150°C
T
C
=25°C
V
GE
=15V
200
150
100
50
0
0
300
0
T
J
=150°C
T
C
=25°C
V
GE
=15V
t
sc
≤10µs
600 800 1000 1200 1400
V
CE
（V）
Figure9. Reverse Biased Safe Operating Area
400
200
400 600 800 1000 1200 1400
V
CE
（V）
Figure10. Short Circuit Safe Operating Area
0
200
175
150
125
I
C
(A)
100
75
50
25
0
0
25
50
75 100 125 150
T
C
Case Temperature(°C)
Figure11. Rated Current vs. T
C
175
T
J
=150°C
V
GE
≥15V
300
250
200
T
J
=125°C
I
F
(A)
150
100
T
J
=25°C
50
0
0
1.5 2.0 2.5
3
3.5
V
F
（V）
Figure12. Diode Forward Characteristics
0.5
1.0
MIMMG100SR120DE
1
1
10
Z
thJC
(K/W)
-1
10
-1
Duty
0.5
0.2
0.1
0.05
Single Pulse
Duty
0.5
0.2
0.1
0.05
Single Pulse
10
-2
Z
thJC
(K/W)
10
-2
10
-3
10
-3
10
-4 -4
10
10
-3
10
-2
10
-1
1
Rectangular Pulse Duration (seconds)
Figure13. Transient Thermal Impedance of IGBT
10
-4 -4
10
10
-3
10
-2
10
-1
1
Rectangular Pulse Duration (seconds)
Figure14. Transient Thermal Impedance of Diode
2
3
1
4
5
7
6
Figure15. Circuit Diagram
M5
2.8x0.5
8.5
1
2
3
7 6
6.5
80.0
Dimensions in mm
Figure16. Package Outlines
4.5
23.0
23.0
17.0
4 5
17.0
34.0
4.5
94.0
23.0
29.5
30.5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
