MIMMG100S120B6UN
1200V 100A IGBT Module
RoHS Compliant
FEATURES
□
High short circuit capability,self limiting short circuit current
□
IGBT CHIP(1200V NPT technology)
□
V
CE(sat)
with positive temperature coefficient
□
Fast switching and short tail current
□
Free wheeling diodes with fast and soft reverse recovery
□
Low switching losses
APPLICATIONS
□
High frequency switching application
□
Medical applications
□
Motion/servo control
□
UPS systems
GS Series Module
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
Vj
=25°C
T
C
=25°C
T
C
=65°C
t
p
=1ms
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=65°C
t
p
=1ms
T
Vj
=25°C
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
1200
±20
150
100
200
625
V
V
A
A
A
W
1200
150
100
200
2500
V
A
A
A
A
2
s
T
Vj
=125°C, t=10ms, V
R
=0V
MIMMG100S120B6UN
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
IGBT
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
V
CE
=600V, I
C
=100A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
V
CC
=600V,I
C
=100A,
R
G
=7.5Ω,
V
GE
=±15V,
Inductive Load
V
CC
=600V,I
C
=100A,
R
G
=7.5Ω,
V
GE
=±15V,
Inductive Load
V
CC
=600V,I
C
=100A,
R
G
=7.5Ω,
V
GE
=±15V,
Inductive Load
t
ps
c
≤10µS
, V
GE
=15V
T
Vj
=125°C,V
CC
=900V
（
Per IGBT）
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
V
CE
=V
GE
, I
C
=4.0mA
I
C
=100A, V
GE
=15V, T
Vj
=25°C
I
C
=100A, V
GE
=15V, T
Vj
=125°C
V
CE
=1200V, V
GE
=0V, T
Vj
=25°C
V
CE
=1200V, V
GE
=0V, T
Vj
=125°C
V
CE
=0V,V
GE
±15V,
T
Vj
=125°C
-400
5
1.05
6.5
0.45
100
110
60
70
530
550
30
40
7
9.5
4.5
6
600
0.2
4.5
5.5
3.2
3.85
2
10
400
6.5
V
V
V
mA
mA
nA
Ω
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K /W
Parameter
Test Conditions
T
C
=25°C unless otherwise specified
Min.
Typ.
Max.
Unit
I
CES
I
GES
R
Gint
Q
ge
C
ies
C
res
t
d(on)
t
r
Rise Time
t
d(off)
Turn - off Delay Time
t
f
Fall Time
E
on
Turn - on Energy
E
off
Turn - off Energy
I
SC
R
thJC
Diode
V
F
t
rr
I
RRM
E
rec
R
thJCD
Short Circuit Current
Junction-to-Case Thermal Resistance
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
I
F
=100A , V
GE
=0V, T
Vj
=25°C
I
F
=100A , V
GE
=0V, T
Vj
=125°C
I
F
=100A , V
R
=600V
di
F
/dt=-1000A/μs
T
Vj
=125°C
1.95
1.95
220
90
4.8
0.4
V
V
ns
A
mJ
K /W
Junction-to-Case Thermal Resistance
（
Per Diode）
MIMMG100S120B6UN
MODULE CHARACTERISTICS
Symbol
T
Vj max
T
Vj op
T
stg
V
isol
CTI
Torque
Torque
Weight
Parameter
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Module-to-Sink
Module Electrodes
Recommended（M6）
Recommended（M5）
AC, t=1min
350
3
2.5
160
5
5
N· m
N· m
g
-40
-40
3000
T
C
=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
150
125
125
Unit
°C
°C
°C
V
200
V
GE
=15V
200
150
T
Vj
=25°C
I
C
(A)
I
C
(A)
100
T
Vj
=125°C
150
100
T
Vj
=125°C
50
50
0
0
3
4
5
6
V
CE
（V）
Figure1. Typical Output Characteristics
1
2
0
0
3
4
5
6
V
CE
（V）
Figure2. Typical Output Characteristics
2
1
200
V
CE
=20V
50
40
E
on
E
off
(mJ)
T
Vj
=125°C
30
20
10
0
160
120
80
40
0
V
CE
=600V
I
C
=100A
V
GE
=±15V
T
Vj
=125°C
E
on
I
C
(A)
T
Vj
=25°C
E
off
5
9
10
8
11 12
V
GE
（V）
Figure3. Typical Transfer characteristics
6
7
50
60
40
30
R
G
（Ω）
Figure4. Switching Energy vs. Gate Resistor
0
10
20
MIMMG100S120B6UN
30
25
20
I
C
(A)
15
10
5
100
200
150
I
C
（A）
Figure5. Switching Energy vs. Collector Current
0
0
50
E
on
V
CE
=600V
R
G
=7.5
Ω
V
GE
=±15V
T
Vj
=125°C
225
200
E
on
E
off
(mJ)
150
100
R
G
=7.5Ω
V
GE
=±15V
T
Vj
=125°C
E
off
50
0
600 800 1000 1200 1400
V
CE
（V）
Figure6. Reverse Biased Safe Operating Area
200 400
0
200
10
8
E
rec
(mJ)
6
4
2
150
T
Vj
=25°C
T
Vj
=125°C
I
F
=100
A
V
CE
=600V
T
Vj
=125°C
I
F
(A)
100
50
0
0
2
3
4
V
F
（V）
Figure7. Diode Forward Characteristics
1
0
0
10
20
30
40
50
R
G
（Ω）
Figure8. Switching Energy vs. Gate Resistor
12.5
10
7.5
5
2.5
R
G
=7.5Ω
V
CE
=600V
T
Vj
=125°C
1
Diode
0.1
IGBT
E
rec
(mJ)
Z
thJC
(K/W)
150
200
100
I
F
(A)
Figure9. Switching Energy vs. Forward Current
50
0.01
0
0
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance
MIMMG100S120B6UN
Figure11. Circuit Diagram
Dimensions (mm)
Figure12. Package Outline
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