MIMMG50H120X6TN
1200V 50A Six-Pack Module
RoHS Compliant
FEATURES
□
High level of integration
3
□
IGBT CHIP(Trench+Field Stop technology)
□
Low saturation voltage and positive temperature coefficient
□
Fast switching and short tail current
□
Free wheeling diodes with fast and soft reverse recovery
□
Solderable pins for PCB mounting
□
Temperature sense included
APPLICATIONS
□
AC motor control
□
Motion/servo control
□
Inverter and power supplies
INVERTER SECTOR
ABSOLUTE MAXIMUM RATINGS
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
Vj
=25°C
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
Vj
=125°C, t=10ms, V
R
=0V
1200
75
50
100
680
V
A
A
A
A
2
s
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=80°C
t
p
=1ms
T
Vj
=25°C
1200
±20
75
50
100
260
V
V
A
A
A
W
Parameter
T
C
=25°C unless otherwise specified
Test Conditions
Values
Unit
MIMMG50H120X6TN
INVERTER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
Symbol
IGBT
V
GE(th)
V
CE(sat)
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
V
CE
=600V, I
C
=50A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
V
CC
=600V,I
C
=50A,
R
G
=18Ω,
V
GE
=±15V,
Inductive Load
V
CC
=600V,I
C
=50A,
R
G
=18Ω,
V
GE
=±15V,
Inductive Load
V
CC
=600V,I
C
=80A,
R
G
=18Ω,
V
GE
=±15V,
Inductive Load
t
ps
c
≤10µS
, V
GE
=15V
T
Vj
=125°C,V
CC
=900V
（
Per IGBT）
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
T
Vj
=25°C
T
Vj
=125°C
V
CE
=V
GE
, I
C
=2.0mA
I
C
=50A, V
GE
=15V, T
Vj
=25°C
I
C
=50A, V
GE
=15V, T
Vj
=125°C
V
CE
=1200V, V
GE
=0V, T
Vj
=25°C
V
CE
=1200V, V
GE
=0V, T
Vj
=125°C
V
CE
=0V,V
GE
±15V,
T
Vj
=125°C
-400
4.0
0.47
3.6
0.16
90
90
30
50
420
520
70
90
4.9
6.6
4.0
4.9
200
0.48
5.0
5.8
1.7
1.9
1
10
400
6.5
V
V
V
mA
mA
nA
Ω
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K /W
Parameter
T
C
=25°C unless otherwise specified
Min.
Typ.
Max.
Unit
Test Conditions
I
CES
I
GES
R
Gint
Q
ge
C
ies
C
res
t
d(on)
t
r
Rise Time
t
d(off)
Turn - off Delay Time
t
f
Fall Time
E
on
Turn - on Energy
E
off
Turn - off Energy
I
SC
R
thJC
Diode
V
F
t
rr
I
RRM
E
rec
R
thJCD
Short Circuit Current
Junction-to-Case Thermal Resistance
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
I
F
=50A , V
GE
=0V, T
Vj
=25°C
I
F
=50A , V
GE
=0V, T
Vj
=125°C
I
F
=50A , V
R
=600V
di
F
/dt=-1200A/μs
T
Vj
=125°C
1.65
1.65
275
50
4.4
0.78
V
V
ns
A
mJ
K /W
Junction-to-Case Thermal Resistance
（
Per Diode）
MIMMG50H120X6TN
NTC SECTOR
CHARACTERISTIC VALUES
Symbol
R
25
B
25/50
Parameter
Resistance
T
C
=25°C unless otherwise specified
Test Conditions
T
C
=25°C
Min.
Typ.
5
3375
Max.
Unit
K
Ω
K
MODULE CHARACTERISTICS
Symbol
T
Vj max
T
Vj op
T
stg
V
isol
CTI
M
d
Weight
Parameter
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Mounting Torque
AC, t=1min
T
C
=25°C unless otherwise specified
Test Conditions
Min.
Typ.
Max.
150
-40
-40
3000
250
Recommended（M5）
2.5
180
5
N· m
g
125
125
Unit
°C
°C
°C
V
100
V
GE
=15V
100
80
T
Vj
=25°C
I
C
(A)
60
40
20
0
80
60
40
20
0
0
I
C
(A)
T
Vj
=125°C
T
Vj
=125°C
1.5 2.0 2.5 3.0 3.5
V
CE
（V）
Figure1. Typical Output Characteristics
IGBT-inverter
0.5
1.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
（V）
Figure2. Typical Output Characteristics
IGBT-inverter
MIMMG50H120X6TN
100
V
CE
=20V
12
10
T
Vj
=25°C
8
6
4
2
5
9
10
11 12
8
V
GE
（V）
Figure3. Typical Transfer characteristics
IGBT-inverter
6
7
0
80
60
40
20
0
E
on
E
off
(mJ)
V
CE
=600V
I
C
=50A
V
GE
=±15V
T
Vj
=125°C
E
on
I
C
(A)
T
Vj
=125°C
E
off
30
40
20
R
G
（Ω）
Figure4. Switching Energy vs. Gate Resistor
IGBT-inverter
0
10
20
16
E
on
E
off
(mJ)
12
8
4
0
0
V
CE
=600V
R
G
=18
Ω
V
GE
=±15V
T
Vj
=125°C
120
100
80
I
C
(A)
60
40
20
R
G
=18Ω
V
GE
=±15V
T
Vj
=125°C
E
on
E
off
40
60
80
100
I
C
（A）
Figure5. Switching Energy vs. Collector Current
IGBT-inverter
100
80
60
I
F
(A)
40
T
Vj
=125°C
20
T
Vj
=25°C
0
0
1.0
2.0
2.5
1.5
V
F
（V）
Figure7. Diode Forward Characteristics
Diode -inverter
0.5
E
rec
(mJ)
20
0
600 800 1000 1200 1400
V
CE
（V）
Figure6. Reverse Biased Safe Operating Area
IGBT-inverter
0
200
400
8.0
I
F
=50
A
V
CE
=600V
T
Vj
=125°C
6.0
4.0
2.0
0
0
10
20
30
40
R
G
（Ω）
Figure8. Switching Energy vs. Gate Resistor
Diode -inverter
MIMMG50H120X6TN
8.0
R
G
=18Ω
V
CE
=600V
T
Vj
=125°C
1
Diode
IGBT
Z
thJC
(K/W)
20
40
60
80
100
I
F
(A)
Figure9. Switching Energy vs. Forward Current
Diode-inverter
100000
I
F
=25
A
V
GE
=15V
V
CE
=600V
T
Vj
=125°C
6.0
E
rec
(mJ)
4.0
0.1
2.0
0
0
0.01
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
Figure10. Transient Thermal Impedance of
Diode and IGBT-inverter
10000
R (Ω)
R
1000
100
0
20
60 80 100 120 140 160
T
C
（°C）
Figure11. NTC Characteristics
40
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